629 MARKING DIODE Search Results

SMD DIODE 517

Abstract: crank sensor HAL621 marking code 4e SMD MARKING CODE TRANSISTOR 501 HAL629 HAL629UA-E SPGS0022-5-A3 Bipolar Static Induction Transistor
Contextual Info: MICRONAS Edition Feb. 5, 2001 6251-109-4E 6251-504-2DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts

crank sensor

Contextual Info: MICRONAS Edition Feb. 3, 2000 6251-504-1DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

hall marking code A04

Contextual Info: MICRONAS Edition Feb. 3, 2000 6251-504-1DS HAL621, HAL629 Hall Effect Sensor Family MICRONAS HAL62x Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Contextual Info: Æ T SGS-THOMSON [»m as'riiM oes BYW 98-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT . THE SPECIFICATIONS AND CURVES EN­

opto d213

Abstract: d213 opto MOCD213 T
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface

IN5767

Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Contextual Info: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT

Contextual Info: N AMER PHILIPS/DISCRETE b'JE ]> • bbS3T31 DDHbb37 =142 H A P X _ J BYM36 SERIES VERY FAST SOFT-RECOVERY AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use in switched-mode power supplies and high-frequency inverter circuits. In general, they are used

Contextual Info: BZD23 SERIES REGULATOR DIODES Glass passivated diodes in herm etically sealed axial leaded ID* glass envelopes. They are intended for use as voltage regulator and transient suppressor diodes in medium power regulation and transient suppression circuits. The series consists o f B Z D 2 3 -C 7 V 5 to B ZD -C 510 in the normalized E24 range.

Contextual Info: INTEGRATED CIRCUITS DATA SHEET TZA3033 SDH/SONET STM1/OC3 transimpedance amplifier Objective specification File under Integrated Circuits, IC19 1998 Jul 08 Philips Semiconductors Objective specification SDH/SONET STM1/OC3 transimpedance amplifier TZA3033 FEATURES

BYM36

Abstract: BYM36A BYM36B BYM36D MARKING AJ5
Contextual Info: N AMER PHILIPS/DISCRETE b'JE D • bbS3^31 00Hbb37 142 ■ APX 11 BYM36 SERIES VERY FAST SOFT-RECOVERY AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use in switched-mode power supplies and high-frequency inverter circuits. In general, they are used

922z

Abstract: 629-22CR4Z 22CR4Z 21CR4Z 921Z MARKING 921z 2cr4
Contextual Info: ISL6292 Data Sheet November 3, 2006 FN9105.7 Li-ion/Li Polymer Battery Charger Features The ISL6292 is an integrated single-cell Li-ion or Li-polymer battery charger capable of operating with an input voltage as low as 2.4V. This charger is designed to work with various

922z

Abstract: 629-22CR4Z 921Z qfn 5x5 thermal resistance 2CR3 qfn 3X3 land pattern 22CR4Z 21CR4Z ISL6292-1CR3-T ISL6292-1CR3Z
Contextual Info: ISL6292 Data Sheet November 14, 2006 FN9105.8 Li-ion/Li Polymer Battery Charger Features The ISL6292 is an integrated single-cell Li-ion or Li-polymer battery charger capable of operating with an input voltage as low as 2.4V. This charger is designed to work with various

NTHD4P02FT1G

Contextual Info: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal

Contextual Info: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

41A SOT-23

Contextual Info: PPJA87P03 30V P-Channel ENHANCEMENT MODE MOSFET 30 V Voltage 4A Current Features         RDS ON , VGS@-4.5V,ID@-3A<87 mΩ RDS(ON), VGS@-10V,ID@-4.1A<55 mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance

Contextual Info: PPJA87P03 30V P-Channel ENHANCEMENT MODE MOSFET 30 V Voltage 4A Current Features         RDS ON , VGS@-4.5V,ID@-3A<87 mΩ RDS(ON), VGS@-10V,ID@-4.1A<55 mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance

BF991

Abstract: G2S-50
Contextual Info: I bbSBTBl ÜG2473CÏ f i l l *APX N APIER PHILIPS/DISCRETE BF991 h?E D SIUCON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

free transistor bs 200

Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Contextual Info: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.

Contextual Info: 'Corp. M I6626U S th ru 1N6631US ! Senta Ana 2830 S. Fairview Street, Santa Ana, CA 92704 714 979-8220 • (714) 557-5989 fa x Features • • • • • • • AXIAL AND SURFACE M OUNT CONFIGURATIONS HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME VERY LOW SWITCHING LOSS AT HIGH TEMPERATURE

Contextual Info: BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

panasonic inverter manual

Abstract: object counter circuit Infrared object counter circuit panasonic frequency inverter manual reflective sensor ir modulated 1" color sensing sensor Panasonic transistor marking code KASUGA
Contextual Info: 5.5mm RX-LS200 -P M4 (length 16mm) screw with washers >Never use this product as a sensing device for personnel protection. I In case of using sensing devices for personnel protection, use products which meet laws and standards, such as OSHA, ANSI or IEC etc., for personnel protec­

GIJ diode

Abstract: IRFI720G
Contextual Info: PD-9.834 International S ] Rectifier IRFI720G HEXFET® Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V DSS “ 400V \ R DS on = 1 -8 ß

4 Pin SMD Hall sensors

Abstract: Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor
Contextual Info: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range

Contextual Info: International k ?r Rectifier I HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • 4A55452 0013146 371 H I N R PD-9.834 IRFI720G Isolated Package High Voltage Isolations 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance