S0T143 Search Results

mosfet marking code gg

Abstract: BF997
Contextual Info: • bbS3*ì31 0024753 n i «APX N AMER PHILIPS/DISCRETE BF997 b?E ]> _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television

Contextual Info: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.

SCR S6025L

Abstract: triac varistor diac triac control 230V 5a diode GU do-214aA working of fuse tube light by 4 diode thyristors catalog vrrm 1000 universal MOTOR speed control 1500w tvs-diode LED VARISTOR 275 K20 SIDACTOR 400A
Contextual Info: CIRCUIT PROTECTION SOLUTIONS Electronics Circuit Protection Product Selection Guide A guide to selecting Littelfuse circuit protection components for electronic applications. Broadest and Deepest Portfolio of Product Backed by Unparalleled Circuit Protection

bc5478

Abstract: 2n2222a SOT23 BC557 smd sot23 2n2222 sot23 BC547 smd BC547 2N2222 2n3906 sot23 2N2222 SMD SOT23 2n2907 smd 2n4401 smd
Contextual Info: SMD w COMPONENT i w i h www.microelectronoc.co.yu i i S M D S E M IC O N D U C T O R S ON M A R K IN G ^ ^ ^ e l e c t r B n ic microe@ptt.yu M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L TY PE M A R K IN G T Y PE N U M B E R PACKAGE C O N V E R C IN A L

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

F1313

Abstract: F-1203 F1283 S0T143 kgf1323 KGF1305s KGF2701
Contextual Info: MMICs an d FETs C o m m u n ic a tio n s 5 V A m p l if ie r s and M ix e r s Supply Part Number KGF1145 Description KGF1146 Output Power Idd> 4 /S O P VCO buffer, limiting amp, small signal, self-biased KGF1155B signal m ixer amp 4 /S O P signal m ixer amp

marking U12

Abstract: USB0403C USB0405C USB0412C USB0415C USB0424C
Contextual Info: USB0403C 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax: (602) 947-1503 thru USB0424C TVSarray Series DESCRIPTION (300 watt) This 4 pin 1 line bidirectional ULTRA LOW CAPACITANCE array designed for use in applications where protection is required at the

varistor sem ad 222 m

Abstract: varistor 222 ste Surgector varistor Z 500 ps
Contextual Info: Overvoltage Suppression Facts V oltage T ra n s ie n ts can be d e fin e d as sho rt du ra tio n e xcu rsio n s o r surges of e le ctrica l energy. T ra n s ie n ts re sult fro m th e s ud den re le ase of pre vio u sly s to re d energy. In te rm s of e le ctrica l o r e le c tro n ic circuits, this

pj 929 diode picture

Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Contextual Info: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 USB50403C thru USB50424C TVSarray Series DESCRIPTION (500 watt) This 4 pin 1 line bidirectional ULTRA LOW CAPACITANCE array is designed for use in applications requiring board level protection from

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

MEXICO LF 2A 250V 313 FUSE

Abstract: MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv
Contextual Info: Circuit Protection Specialists World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA Technical Assistance and

msc diode

Abstract: 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW
Contextual Info: Fall 1998/Winter 1999 conditioning ThinKey Package in Production Microsemi's Santa Ana division is now in production on a complete line of hermetic rectifiers. These devices are offered in the Microsemi patented ThinKey package with RθJC ratings as low as 0.2oC/W. Available in strap to

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

Contextual Info: USB50403 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 thru USB50424 TVSarray Series DESCRIPTION (500 watt) This 4 pin 1 line unidirectional ULTRA LOW CAPACITANCE array is designed for use in applications requiring board level protection from

sot143 Marking code 53

Contextual Info: USB50403C 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 thru USB50424C TVSarray Series DESCRIPTION (500 watt) This 4 pin 1 line bidirectional ULTRA LOW CAPACITANCE array is designed for use in applications requiring board level protection from

Contextual Info: 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 USB50403 thru USB50424 TVSarray Series DESCRIPTION (500 watt) This 4 pin 1 line unidirectional ULTRA LOW CAPACITANCE array is designed for use in applications requiring board level protection from

F527S

Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553
Contextual Info: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.

Contextual Info: SAtfYO P o w e r S c h o t t k y B a r r i e r D i o d e s For L a r g e - S i g n a l Use Sanyo Schottky barrier diodes (SBD) have been developed by our original technology. They are available for making sets smaller in size and lighter in veight. Sanyo power SBDs with breakdown voltages of 50V, 90V and 180V can be applied to various uses.