free transistor bs 200
Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Contextual Info: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.
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711008bbf991ot143ot103+5free transistor bs 200marking bs mosfetfet marking codeg2s-50transistor bf991
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thy 266
Abstract: m1435 M1443 M2803 BTR59-800R lg philips inverter M3226 IEC134 BTR59 Gate Turn-Off Thyristors
Contextual Info: PHILIPS INTERNATIONAL SflE D m 7110ÔHb 0D5305Ô TOT H P H I N B T R 5 9 S E R IE S FAST GATE TURN-OFF THYRISTORS Thyristors in SOT-93 envelopes which are capable o f being turned both on and o ff via the gate and may be used w ith gate-assisted tu rn -o ff in anode-commutated circuits. They are suitable fo r use in
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btr59ot-93thy 266m1435+7m1443m2803btr59-800rlg philips inverterm3226iec134gate turn-off thyristors
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mosfet marking code gg
Abstract: marking g1s marking code g1s
Contextual Info: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television
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711002bbf997ot143mosfet marking code gg+2marking g1smarking code g1s
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