613 MOSFET Search Results

irf610

Abstract: power MOSFET IRF610 F611 irf610 mosfet IRF612 IRF-610 mosfet irf610
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES • • • • • • • Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

irf610

Abstract: power MOSFET IRF610 irf610 mosfet pulse electronics era IRF61 irf610 samsung
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF013

Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

LNK 606 DG

Abstract: lnk605 lnk606 pI LNK605 SO-8 Lnk 616pg LinkSwitch-II ee16 transformer specification LNK603 lnk616 smd diode K7
Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

lnk605

Abstract: lnk606 lnk 305 pn Lnk 616pg LNK 602 pn junction DIODE 1N4007 fr102 diode LNK 606 DG LinkSwitch-II LNK615
Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

LNK605D

Abstract: lnk 305 pn lnk616 LNK 616PG LNK605 LNK616P LNK606P lnk606 LNK613 LNK615
Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

LNK606DG

Abstract: lnk606 LNK606PG LNK616DG cccv based battery charge controller lnk616 lnk614 LinkSwitch-II lnk603 LNK613DG
Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

mosfet SMD 34 DG

Abstract: 1N4007/smd diode a7
Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Eficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simpliies CV/CC Converters • Eliminates optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

Contextual Info: SAMSUNG ELECTRONICS INC b4E D 7 ^ 4 1 4 2 GG1247Ü 613 m S H G K N-CHANNEL POWER MOSFET SSP1N60/1N55 FEATURES • • • • • • TO-220 Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance

lnk603

Abstract: LNK 606 DG lnk616 pn junction DIODE 1N4007 LNK 616 lnk606 lnk605 ee13 transformer LNK605D LinkSwitch-II
Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

lnk606

Abstract: character diode 1N4007 LNK613 lnk616 lnk605 Lnk 616pg LinkSwitch-II LNK605D LNK614 LNK604
Contextual Info: LNK603-606/613-616 LinkSwitch-II Family Energy-Efficient, Accurate CV/CC Switcher for Adapters and Chargers Product Highlights Dramatically Simplifies CV/CC Converters • Eliminates Optocoupler and all secondary CV/CC control circuitry • Eliminates all control loop compensation circuitry

IRF610

Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

Contextual Info: S A M S U N G E L E C T R O N I C S INC b4E » • 7^4142 O O l E l b T 3 ST « S M Ù K N-CHANNEL POWER MOSFETS IRF610/611 /612/613 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

SKH122

Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
Contextual Info: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300

Contextual Info: • 4302271 0054003 33 H A R R IS 2 77 ■ HAS IRF610/611/612/613 IRF61 OR/611R/612R/613R N-Channel Power MQSFETs Avalanche Energy Rated* August 1991 Features Package T0 -22 0A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • ros on = 1-5 i i and 2 -4 ii • Single Pulse Avalanche Energy Rated*

IRF610

Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
Contextual Info: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power

Hdd spindle motor

Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
Contextual Info: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts

IGBT Electrostatic Handling Precautions

Abstract: AN4502 Dynex Semiconductor BSI 208
Contextual Info: AN4502 Application Note AN4502 IGBT Electrostatic Handling Precautions Application Note Replaces September 2000 version, AN4502-3.0 AN4502-3.1 July 2002 The IGBT has been developed to combine the properties of both MOSFET and Bipolar devices. This overcomes some of the

STR 6656

Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

1RF610

Abstract: IRFS10 IRF611 IRF N-Channel Power MOSFETs IRF612 IRF613 IRF610R IRF611R IRF612R IRF613R
Contextual Info: 2 H A R R I S I R I R F 6 1 O F R 6 1 / 6 / 6 1 1 R 1 / 6 1 1 / 6 2 1 R 2 / 6 / 6 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package TO -22D A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • l'DSion) = 1-5H and 2.4i l

ic str wg 252

Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Contextual Info: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,

HV9961

Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
Contextual Info: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,