6116 STATIC RAM Search Results

6116 RAM

Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Contextual Info: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS

Contextual Info: § 5 -= MHS IlM ll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CM OS STATIC RAM C k V rsx Features • MILITARY/INDUSTRIAL : FAST A C C E SS TIME : 120 ns • ASYNCHRONOUS • STAND BY CURRENT : 100 pA max • OPERATING SU PPLY CURRENT : SO mA max • BATTERY BACK UP OPERATION : 2V mln - SO jiA max

EL6116

Abstract: 6116 RAM ci 6116 ram 6116 IDT6116 memory 6116 6116 memory 6116 ram 2k chip diagram of ram chip 6116 L6116CMB25
Contextual Info: L 6116 2K x 8 Static RAM Low Power D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 2K x 8 Static RAM w ith Chip Select Powerdown, Output Enable The L6116 is a high-performance, lowpower CMOS Static RAM. The storage circuitry is organized as 2048

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

ES 61162

Contextual Info: h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE R ANG E: - 55 TO + 125°C

Contextual Info: March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY .120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY: 2.0 (xW (TYP) DATA RETENTION : 4 (TYP)

6116 block diagram

Contextual Info: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C

6116 RAM

Abstract: 6116 6116 static ram SRAM 6116 ram 6116 6116 memory HM6116 6116 sram 6116 CMOS RAM decoder 6116
Contextual Info: Illiïü HM 6116 DATA SHEET_ 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME COMMERCIAL : 120 NS MAX INDUSTRIAL : 120 NS (MAX) MILITARY : 120 NS (MAX) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (TYP) STANDBY : 2.0 nW (TYP) DATA RETENTION : 4 fiW (TYP)

2048x8 RAM

Abstract: 6216 static ram
Contextual Info: GEC PLESSEY m a 6H 6/6216 Radiation Hard 2048x8 Bit Static RAM S10307FDS Issue 1.5 O ctober 1990 Features • 3pm CMOS-SOS technology • Latch up free • Fast access time 110ns MA6116 and 85ns (MA6216) typical • Total dose 1.5x10s rad (Si) • Transient upset 5x1010 rad (Si) /sec

IDT6116LA

Abstract: IDT6116SA SO24-2
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

Contextual Info: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM

6116LA45

Abstract: IDT6116LA IDT6116SA SO24-2
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

6116 CMOS RAM

Abstract: 6116LA45 6116 ram 2k
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

Contextual Info: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

ram 8416

Contextual Info: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

6116 ram 2k

Abstract: IDT6116LA IDT6116SA SO24-2 idt6116s
Contextual Info: IDT6116SA IDT6116LA CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.)

Contextual Info: CMOS Static RAM 16K 2K x 8-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT6116SA IDT6116LA Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25ns (max.) – Commercial: 15/20/25ns (max.)

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

cd4060

Abstract: cd4060 crystal application CD4060 data CD4040 application circuit for CD4060 of CD4060 cmos 74C00 NAND IC2 CD4060 cd4060 application note IC2 CD4060 CURRENT TO VOLTAGE CONVERTER
Contextual Info: APPLICATION NOTE 24 TC7109 RECORDS REMOTE DATA AUTOMATICALLY TC7109 RECORDS REMOTE DATA AUTOMATICALLY By Wes AN-24 Freeman A TelCom Semiconductor analog-to-digital converter, a 2K-byte CMOS static RAM, and some gates and counters can be combined to form a low-cost, flexible, stand-alone

EL6116

Abstract: L6116M
Contextual Info: L6116 D t V I C t S IN C O R P O R A I b FEATURES □ 2K x 8 Static R A M w ith C hip Select Pow erd ow n, O utpu t Enable □ A uto-P ow erd ow n Design □ A dvanced C M O S Technology □ H igh Speed — to 10 ns m axim um □ Low P ow er O peration

6116 CMOS RAM

Contextual Info: CMOS STATIC RAM 16K 2Kx 8-BIT IDT6116SA IDT6116LA Integrated Devicelechnol03y Inc FEATURES: DESCRIPTION: • T h e ID T6116S A /LA is a 16,384-bit h ig h -s p e e d s ta tic RAM or­ g an ize d as 2K x 8. It is fa b rica te d u sin g ID T ’s h igh-perform ance,

Contextual Info: SGS-THOMSON M 0 » I L » m TJÌ MK6116, MKI6116, MK6116L, MKI6116L N/S -15/20/25 2K x 8 CMOS STATIC RAM Data Sheet a BYTEWYDE 2K X 8 CMOS STATIC RAM □ 45 VOLT ONLY WRITE/READ □ 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC □ EQUAL WRITE AND READ CYCLE TIMES

Contextual Info: CXK5816PN/M SONY 2K-word X 8 bit High Speed CM O S Static RAM D escription The CXK5816PN /M static RAM organized operates from a single suitable for use in high in w hich battery back Package Outline is a 1 6 ,3 8 4 bits high speed CMOS as 2 ,0 4 8 words by 8 bits and

8403602JA

Abstract: 8403606JA
Contextual Info: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max