61 TRANSISTOR Search Results

1LS transistor

Abstract: 61 TRANSISTOR marking 1ks Q62702-C2155 Q62702-C2156 Q62702-C2157 transistor marking T2
Contextual Info: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C

transistor marking code 7e

Abstract: D 843 Transistor transistor MUI
Contextual Info: SIEMENS NPN Silicon Double Transistors • • • • BCV61 To be used as a current mirror Good thermal coupling and V b e matching High current gain Low emitter-saturation voltage Type Marking Ordering Code tape and reel B C V 61 A B C V 61 B B C V 61 C

SDT423

Abstract: SDT411 SDT425
Contextual Info: 33 SILICON POWER TRANSISTORS CURRIE MT G A IN TYPE NUM BER CASE TYPE V CBO V V EBO V CEO I V I V h M IN . I MAX. V CE V S A T U R A T IO VI V O LT A G E S <s> C I A V CE(s V BE(s) V I V 'c A 1 *B A 10 AMP SILICON NPN 2N5313 2N5315 2N5317 TO-61 TO-61 TO-61-I

32-PIN

Abstract: ICS8430AYI-61 ICS8430AYI-61T ICS8430I-61 ICS84332 MS-026
Contextual Info: ICS8430I-61 Integrated Circuit Systems, Inc. 500MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS8430I-61 is a general purpose, dual output Crystal-to-3.3V Differential LVPECL High FreHiPerClockS quency Synthesizer and a member of the

transistor 31vp

Contextual Info: Preliminary October 1997 PBL 386 61/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 61/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Central Office, MUX and other telecommunications equipment. The

CAPACITOR 64 680 4J

Abstract: 567 tone BST72 Frequency Discriminator PCD3360P Z879 PCD3360 PCD3360T PCD3361P PCD3361T
Contextual Info: Signetics Linear Products Product Specification Programmable Multi-Tone Telephone Ringer PCD3360/61 G ENERA L DESCRIPTION The PCD3360/61 are CMOS integrated circuits, designed to replace the electro-mechanical bell in telephone sets. They meet most postal requirements, p a rticularly w ith tone sequence possibilities and

FMCW Radar

Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Contextual Info: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.

Contextual Info: BCW 61 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse

Contextual Info: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm — NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

nj TRANSISTOR

Contextual Info: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability

2sk161

Abstract: TOSHIBA 2SK161
Contextual Info: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS — NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.) Extremely Low Reverse Transfer Capacitance

BCV26

Abstract: to-202h
Contextual Info: Discrete POW ER & Signal Technologies S e m i c o n d u c t o r ' BCV26 & _ National BCV26 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings*

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

6CW SOT23

Abstract: 6CW 36 marking 6cw sot-23 6CW 60 6CW 75 marking 6cw 6CW 71 MARKING 6cw SOT23 6Cw marking code sot 23 6CW pNP
Contextual Info: SIEMENS NPN Silicon AF Transistors BCW 60 BCX 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 61, BCX 71 PNP Type Marking

C1554

Abstract: BKs sot-23 SIEMENS BJS marking BJs
Contextual Info: SIEMENS PNP Silicon AF Transistors BCW 61 BCX 71 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN Type Marking

K2961

Contextual Info: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2 S K2 9 61 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION • Low Drain-Source ON Resistance

Contextual Info: C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

TRANSISTOR BDX

Abstract: QR208 Darlington 40A 200w audio amplifier ic
Contextual Info: DEF STAN 59 - 61 - PART 70 - 0128 - 090 Detail Spec. SEME Issue 1. LAB Jan. 1995. BDX68 BDX68A BDX68B BDX68C PNP DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 4.2 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. BDX68A BDX68A BDX68B

1SV211

Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
Contextual Info: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

25c reference top mark sot23

Abstract: sot23 A63
Contextual Info: MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: SEMICONDUCTOR tm MPSA63 MMBTA63 PZTA63 PNP Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 800 mA. Sourced from Process 61. See M PSA64 for characteristics. Absolute Maximum RâtinÇjS T A = 25°C unless o th e rw ise noted

Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: TEXAS INSTR COPTO} ^2 DË~|ôTbl7ab 0D3bSfil S9 61 72 & TEXAS INSTR OPTO D 62C 3 6 5 8 1 ' 2N3791 P-N-P SILICON POWER TRANSISTOR NOVEMBER 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With 2N3713 150 W at 25°C Case Temperature e 10 A Continuous Collector Current