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IXYS Corporation


IXYS Corporation IXFB60N80P MOSFETs 60 Amps 800V 0.14 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFB60N80P		106			1 $34.84 10 $24.27 100 $24.27 1000 $24.27 10000 $24.27	Buy Now
TTI	IXFB60N80P	Tube			300	1 - 10 - 100 - 1000 $20.93 10000 $20.93	Buy Now
IXYS Corporation IXFN60N80P MOSFET Modules DIODE Id54 BVdass800
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFN60N80P					1 $56.13 10 $45.60 100 $41.84 1000 $41.84 10000 $41.84	Get Quote
TTI	IXFN60N80P	Tube			300	1 - 10 - 100 - 1000 $36.09 10000 $36.09	Buy Now
IXYS Corporation IXFL60N80P MOSFETs 42 Amps 800V 0.15 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFL60N80P					1 - 10 - 100 - 1000 $27.64 10000 $27.64	Get Quote
TTI	IXFL60N80P	Tube			300	1 - 10 - 100 - 1000 $25.63 10000 $25.63	Buy Now

60N80P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	60N80P ISOPLUS264TM ISOPLUS264	PDF
60N80 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	60N80P PLUS264TM 60N80	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	60N80P	PDF
60N80P Abstract: 60N80 IXFL60N80P Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	60N80P ISOPLUS264TM ISOPLUS264 60N80P 60N80 IXFL60N80P	PDF
60n80p Abstract: 60N80 ixfb60n80p IXFb 60N80P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 60N80P VDSS = 800 V ID25 = 60 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	60N80P 60n80p 60N80 ixfb60n80p IXFb 60N80P	PDF
IXFN 60N80P Abstract: ixfn60n80p 60N80 60N80P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 60N80P VDSS ID25 = 800 V = 53 A Ω RDS on ≤ 140 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	60N80P IXFN 60N80P ixfn60n80p 60N80 60N80P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF