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    60D MEA Search Results

    60D MEA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    delta plc

    Abstract: star delta plc 2E12 3E12 FRE460D FRE460H FRE460R PA 381 Rad Hard in Fairchild for MOSFET
    Contextual Info: FRE460D, FRE460R, FRE460H 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 [ /Title FRE4 60D, FRE46 0R, FRE46 0H /Subject (12A, 500V, 0.410 Ohm, Rad Hard, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, Semiconductor,


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    FRE460D, FRE460R, FRE460H FRE46 O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD delta plc star delta plc 2E12 3E12 FRE460D FRE460H FRE460R PA 381 Rad Hard in Fairchild for MOSFET PDF

    Contextual Info: AM20P04-60D Analog Power P-Channel 40-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


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    AM20P04-60D DS-AM20P04-60 PDF

    BCV71

    Abstract: BCV72 BCX70G FMMT3903 FMMT3904 FMMT3905 FMMT3906 BCW61D 215
    Contextual Info: SOT-23 TRANSISTORS NPN GENERAL PURPOSE RATINGS A N D CHARACTERISTICS at 25°C ambient temperature. Type BCV71 BCV72 FM MT3903 FMMT3904 BCW 71/71R BCW 72/72R BCX70G BCX70H BCX70J BGX70K BCW 60A BCW60B BCW60C BCW 60D BCW 31/31R BCW 32/32R BCW 33/33R FM M T-A 20


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    OT-23 BCV71 BCV72 FMMT3903 FMMT3905 FMMT3904 FMMT3906 BCW71/71R BCW69/69R BCW72/72R BCX70G FMMT3905 FMMT3906 BCW61D 215 PDF

    laser DFB 1310nm 10mW

    Abstract: ML7924 laser diodes for optical source
    Contextual Info: MITSUBISHI LASER DIODES ML7XX4 SERIES InGaAsP—MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L7X X4 series are M Q W *— D F B * ' laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typica l-60d B c/C T B typica l-65d B c


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    1310nm. ML7924 typical-60dBc/CTB typical-65dBc 78-channel laser DFB 1310nm 10mW laser diodes for optical source PDF

    Contextual Info: MITSUBISHI LASER DIODES ML9XX13 SERIES InG aA sP -M Q W -D FB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X13 series are M Q W * — D F B * laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typica l-55d B c/C T B typica l-60d B c


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    ML9XX13 l-55d l-60d 1550nm L99213 PDF

    Contextual Info: 19-1404; Rev 1; 4/99 Se ria lly Cont rolle d, Clic k le ss Audio/Vide o Sw it c he s The MAX4571MAX4574 serial-interface controlled switches are ideal for multimedia applications. Each device features 35Ω max on-resistance, -90dB audio off-isolation at 20kHz, -60d B vid eo off-isolation at


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    MAX4571â MAX4574 -90dB 20kHz, MAX4571/MAX4573 MAX4572/MAX4574 MAX4571/MAX4572 MAX4573/MAX4574 28-pin PDF

    laser DFB 1550nm 10mW

    Abstract: laser DFB 1550nm 10mW single laser DFB low beam divergence 1550nm 10mW laser diode 10mw 1550nm ML99213 ML9XX13 dfb 10mw DFB CATV 1550nm laser diode relative intensity noise R4045
    Contextual Info: MITSUBISHI LASER DIODES ML9XX13 SERIES In G a A s P -M Q W -D F B LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X13 serie s are M Q W *— D F B * laser diod es em itting • E x c e lle n t low distortion cha racte ristic C S O typica l-55d B c/C T B typica l-60d B c


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    ML9XX13 1550nm. ML99213 typical-55dBc/CTB typical-60dBc 78-channel inten50 ra-170 laser DFB 1550nm 10mW laser DFB 1550nm 10mW single laser DFB low beam divergence 1550nm 10mW laser diode 10mw 1550nm dfb 10mw DFB CATV 1550nm laser diode relative intensity noise R4045 PDF

    Contextual Info: Tube Selection Guide The chemical resistance information shown in this selection guide is meant to serve as a guideline only. To determine the suitability of a particular tubing type, we would recommend testing under actual conditions. Santoprene Teflon FEP


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    to172Â 5-98A PDF

    b102k

    Abstract: b103k B222K b-102k LM358 heat sensor uPD5555G 1S184 2903M pyroelectric infrared sensor LM358 sensor temperature
    Contextual Info: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


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    260T5 MIL-STD-202F FC-40) 125T5D W100mV b102k b103k B222K b-102k LM358 heat sensor uPD5555G 1S184 2903M pyroelectric infrared sensor LM358 sensor temperature PDF

    Contextual Info: SM1020D THRU SM10100D Elektronische Bauelemente VOLTAGE 20V ~ 100V 10.0 AMP Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 2 D -Pack + 0.5 4.5 + 0.2 1.6 + 0.3 10 FEATURES + 0.5 1.28 5.0 + 0.3


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    SM1020D SM10100D 01-Jun-2002 PDF

    Contextual Info: HIS General HIF2C SERIES DIRECT CONNECTION WITH BOARDS, 4-ROW ARRANGEMENT HIF2C Series printed circuit connectors are used for direct connection with boards like HIF2B series. As posts are of r Features 1. Board pattern design is easy. 2. Connector height was further lowered to permit


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    UL2651> 127mm) PDF

    TB325

    Abstract: HI5721
    Contextual Info: Harris Semiconductor No. TB325.1 Harris Data Acquisition January 1995 UNDERSTANDING GLITCH IN A HIGH SPEED D/A CONVERTER Authors: Juan Garcia and Stephen G. LaJeunesse Introduction V Today’s high speed D/A converters are used in communications applications such as:


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    TB325 HI5721 PDF

    BCW60

    Abstract: transistor ad 1v hFE Group ferranti BCW60A BCW60B BCW60C BCW60D FERRANTI ZS Scans-0010382
    Contextual Info: FERRANTI k semiconductors BCW60 N P N Silicon Planar Small Signal Transistor DESCRIPTION These devices are intended fo r use in low level a m plifica ­ tion, low level sw itching and low noise applications. Encapsulated in the popular SOT-23 package these devices


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    BCW60 OT-23 BCW60 BCW60, BCW60A BCW60B BCW60C transistor ad 1v hFE Group ferranti BCW60D FERRANTI ZS Scans-0010382 PDF

    bcw60dr

    Abstract: BCW60Ar partmarking 6 C BCW60CR
    Contextual Info: BCW60 ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage UNIT CONDITIONS. V (BR)CEO 32 V lc=2mA Emitter-Base Breakdown Voltage V(BR)EBO 5 V 'e b o = V A Collector-Emitter Cut-off Current


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    BCW60 BCW60AR BCW60BR BCW60CR BCW60DR partmarking 6 C PDF

    Si7137DP

    Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET


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    Si7137DP 2002/95/EC Si7137DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    minimum wipe length engagement

    Abstract: 108-046 press fit connector Cookson Group Kester 953 Flux 2P-24S-2P
    Contextual Info: Application Specification 114- 13038 MULTI- BEAM XL* Connectors 13 JUL 09 Rev H All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and inches]. Unless otherwise specified, dimensions have a tolerance of +0.13 [+.005] and angles have a tolerance of +2_.


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    PDF

    pyroelectric infrared sensor

    Abstract: W55D Infrared-Sensor IRA-E710ST1 b102k 1S184 "Pyroelectric Infrared Sensor" pyroelectric amplifier circuit LM358 heat sensor IMD-B101-01
    Contextual Info: This is the PDF file of catalog No.S21E-2. No.S21E2.pdf 00.7.20 PYROELECTRIC INFRARED SENSOR & SENSOR MODULE PYROELECTRIC INFRARED SENSOR & SENSOR MODULE Murata Manufacturing Co., Ltd. Cat.No.S21E-2 This is the PDF file of catalog No.S21E-2. No.S21E2.pdf 00.7.20


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    S21E-2. S21E2 S21E-2 IRA-E700 IRA-E900 IRA-E940ST1 IRA-E500 IRA-E410 pyroelectric infrared sensor W55D Infrared-Sensor IRA-E710ST1 b102k 1S184 "Pyroelectric Infrared Sensor" pyroelectric amplifier circuit LM358 heat sensor IMD-B101-01 PDF

    ir sensor circuit diagram using LM358

    Abstract: uPD5555G b102k B222K pyroelectric amplifier circuit pyroelectric infrared sensor light sensor LM358 IR sensor LM358 2903M IMD-B101-01
    Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. S21E3.pdf 03.2.17


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    S21E3 S21E-3 ir sensor circuit diagram using LM358 uPD5555G b102k B222K pyroelectric amplifier circuit pyroelectric infrared sensor light sensor LM358 IR sensor LM358 2903M IMD-B101-01 PDF

    ferranti

    Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
    Contextual Info: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices


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    FMMT-A20 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J BCX71K ferranti FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 PDF

    TRANSISTOR A70

    Abstract: marking A70 SOT 213 BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT-A70
    Contextual Info: 4 FERRANTI semiconductors F M M T -A 70 PNP S ilicon Planar Sm all Signal T ransistor D E S C R IP T IO N T h is device is intended for sm all and m e diu m sign a l a m plification a p p lica tio n s from d.c. to radio frequencies. E ncapsu late d in the p opu lar SO T-23 p a c k a g e the device is


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    FMMT-A70 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J TRANSISTOR A70 marking A70 SOT 213 BCV72 BCW29 BCW30 BFQ31 BFQ31A BFS20 FMMT-A70 PDF

    Contextual Info: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET


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    Si7137DP 2002/95/EC Si7137DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    BCV72

    Abstract: BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti
    Contextual Info: I t FERRANTI llsemiconductorsL FMMT4125 PNP Silicon Planar General Purpose S w itch in g T ransistor D E S C R IP T IO N T h is device is intended for use in sm a ll and m e diu m sign a l a m p lificatio n a p p lica tio n s from d.c. to radio requencies.


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    FMMT4125 OT-23 FMMT5087 BCW69 BCW70 BCX71G BCX71H BCX71J BCX71K BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20 FMMT4125 transistor dg sot-23 ferranti PDF

    Contextual Info: SM2020D THRU SM20100D VOLTAGE 20V ~ 100V Elektronische Bauelemente 20.0 AMP Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free D2-Pack + 0.5 + 0.5 1.28 1.2 + 0.3 10 2.0Max 3 2 + 0.2 5.0 1 + 0.2 1.6


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    SM2020D SM20100D 06-Nov-2009 PDF

    SM20100D

    Abstract: dsm20 SM20
    Contextual Info: SM2020D THRU SM20100D VOLTAGE 20V ~ 100V Elektronische Bauelemente 20.0 AMP Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free D2-Pack + 0.5 + 0.2 1.6 + 0.5 + 0.3 2.0Max 1.28 10 2 . Low forward voltage drop


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    SM2020D SM20100D 01-Jun-2002 SM20100D dsm20 SM20 PDF