600V 5A Search Results

GF10NC60

Abstract: GP10NC60KD gf10nc STGF10NC60KD STGB10NC60KD STGB10NC60KDT4 STGP10NC60KD GB10NC60KD GF10NC60KD JESD97
Contextual Info: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V

GP10NC60KD

Abstract: GF10NC60KD GB10NC60KD STGP10NC60KD STGB10NC60KDT4 JESD97 STGB10NC60KD STGF10NC60KD GB10NC60K GF10NC60
Contextual Info: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V

GP10NC60KD

Abstract: STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking STGF10NC60KD gp10nc60
Contextual Info: STGB10NC60KD STGF10NC60KD - STGP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD STGP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V

GF10NC60

Abstract: gp10nc60 GP10NC60HD RG 2006 10A 600V gf10nc GF10NC60HD GF10N STGP10NC60HD GB10NC60HD JESD97
Contextual Info: STGB10NC60HD - STGF10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT Features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A STGF10NC60HD 600V < 2.5V 6A

gp10nc60k

Abstract: RG 2006 10A 600V JESD97 STGB10NC60K STGB10NC60KT4 STGD10NC60K STGP10NC60K
Contextual Info: STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K STGP10NC60K STGD10NC60K 600V 600V 600v <2.5V <2.5V <2.5V 10A 10A 10A

Contextual Info: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 SÌ-FRD/5A/600V

YG972S6

Abstract: TO-220F torque ips circuit diagram YG972S6R TO-220F JEDEC YG971S6R PH967C6 YG971S6 PH965C6 YA975C6R
Contextual Info: Super LLD For PFC circuit Device Type PH965C6 PH967C6 YA971S6R YA972S6R YA975C6R Features Super LLD(For PFC circuit) ‚hp 20A/600V Super LLD(For PFC circuit) ‚hp 30A/600V Super LLD2(For PFC circuit) ‚ho 8A/600V Super LLD2(For PFC circuit) ‚ho 10A/600V

CEF09N6

Abstract: CEP09N6 CEB09N6
Contextual Info: CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP09N6 600V 1.2Ω 9A 10V CEB09N6 600V 1.2Ω 9A 10V CEI09N6 600V 1.2Ω 9A 10V CEF09N6 600V 1.2Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).

gp10nc60hd

Abstract: gp10nc60 GB10NC60HD STGP10NC60HD
Contextual Info: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1

GP10NC60HD

Abstract: GB10NC60HD RG 2006 10A 600V JESD97 STGB10NC60HD STGP10NC60HD GP10N gp10nc60
Contextual Info: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1

RG 2006 10A 600V

Abstract: STGB10NC60HDT4
Contextual Info: STGB10NC60HD STGP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A STGP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1

SF5J42

Abstract: SF5G42
Contextual Info: SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V Average On−State Current : IT AV = 5A

400v 15A thyristor

Abstract: F5J41 SF5G41A SF5J41A 2f5g41
Contextual Info: SF5G41A,SF5J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G41A, SF5J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A

SF5J42

Abstract: F5J42 SF5G42
Contextual Info: SF5G42, SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42, SF5J42 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A

F5GZ47

Abstract: F5JZ47
Contextual Info: SF5GZ47, SF5JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5GZ47, SF5JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A

GW19NC60WD

Abstract: gw19nc60w
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

CEB10N6

Abstract: CEF10N6 CEP10N6
Contextual Info: CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: SF5G42, SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42, SF5J42 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A

f5jz47

Abstract: f5gz47 SF5JZ47 SF5GZ47
Contextual Info: SF5GZ47,SF5JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5GZ47,SF5JZ47 Unit: mm MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage Repetitive Peak Reverse Voltage : VDRM = 400, 600V : VRRM = 400, 600V Average On−State Current : IT AV = 5A

f5gz47

Abstract: F5JZ47 SF5GZ47 SF5JZ47
Contextual Info: SF5GZ47, SF5JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5GZ47, SF5JZ47 MEDIUM POWER CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A

GW19NC60WD

Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

SF5G41

Abstract: SF5G41A SF5J41 SF5J41A
Contextual Info: SF5G41A,SF5J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G41A,SF5J41A Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 5A

Contextual Info: SF5G48, SF5J48, USF5G48, USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48, SF5J48, USF5G48, USF5J48 MEDIUM POWER CONTROL APPLICATIONS Repetitive Peak Off−State Voltage: VDRM = 400V, 600V Repetitive Peak Reverse Voltage: VRRM = 400V, 600V Average On−State Current: IT AV = 5A

SF5J42

Abstract: SF5G42
Contextual Info: SF5G42,SF5J42 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF5G42,SF5J42 Unit: mm MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current : IT AV = 5A