CEF09N6 Search Results
CEF09N6 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CEF09N6 | Chino-Excel Technology | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 44.22KB | 5 |
CEF09N6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CEF09N6
Abstract: CEP09N6 CEB09N6
|
Original |
cep09n6/ceb09n6cei09n6/cef09n6cep09n6ceb09n6+6 | |
CEF09N6Contextual Info: CEF09N6 Jul. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 5A ,RDS ON = 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole. |
Original |
cef09n6o-220f | |
CEF09N6Contextual Info: CEF09N6 Jul. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 6A ,RDS ON = 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-220F full-pak for through hole. |
Original |
cef09n6o-220f | |
CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
|
Original |
o-251/to-252o-220/to-263ot-23ot-223+13 |