GP10N Search Results

GP10N

Abstract: GP10Q GP10T GP10V GP10Y
Contextual Info: TH97/10561QM GP10N - GP10Y TW00/17276EM IATF 0060636 SGS TH07/1033 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 1100 - 1600 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * Glass passivated junction chip High current capability High reliability Low reverse current

DO-204AL

Abstract: GP10A GP10Y J-STD-002 GP10JE
Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: GP10x www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: GP10x www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: GP10A THRU GP10Y GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1600 Volts Forward Current - 1 . 0 Ampere FEATURES DO-2Q4AL ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 '. ♦ High temperature metallurgically bonded construction'

Contextual Info: STGB10NB60S GP10NB60S, GP10NB60SFP 16 A, 600 V, low drop IGBT Features TAB • Low on-voltage drop VCE(sat ■ High current capability 3 1 D2PAK Applications ■ Light dimmer ■ Static relays ■ Motor drive TAB 3 1 TO-220 Description This IGBT utilizes the advanced Power MESH

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: New Product GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

Contextual Info: New Product GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current

GP10NC60KD

Abstract: STGP10NC60KD gf10nc60kd RG 2006 10A 600V GF10N ST IGBT code marking STGF10NC60KD gp10nc60
Contextual Info: STGB10NC60KD STGF10NC60KD - GP10NC60KD N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60KD GP10NC60KD STGF10NC60KD 600V 600V 600V <2.5V <2.5V <2.5V

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

gb10nb

Abstract: GB10NB60S GB10NB60 STGB10NB60S gp10nb60s
Contextual Info: STGB10NB60S GP10NB60S 16 A, 600 V, low drop IGBT Features • Low on-voltage drop VCE(sat ■ High current capability TAB TAB Applications ■ Light dimmer ■ Static relays ■ Motor drive 3 3 1 TO-220 1 2 D2PAK Description This IGBT utilizes the advanced PowerMESH

gp10nc60hd

Abstract: gp10nc60 GB10NC60HD STGP10NC60HD
Contextual Info: STGB10NC60HD GP10NC60HD N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH IGBT General features IC VCE sat (Max)@ 25°C @100°C Type VCES STGB10NC60HD 600V < 2.5V 10A GP10NC60HD 600V < 2.5V 10A • ■ ■ Low on-voltage drop (Vcesat) 3 3 1

GP10NC60KD

Abstract: GF10NC60 GF10NC60KD gp10nc60 gf10nc H1 IC gp10nc60k STGP10NC60KD morocco L3 STGF10NC60KD
Contextual Info: GP10NC60KD - STGF10NC60KD STGB10NC60KD N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat (Max) @25°C IC @100°C STGB10NC60KD STGF10NC60KD GP10NC60KD 600 V

GB10NB37LZ

Abstract: gb10nb37 IC 7402 Gb10nb37l gp10nb37lz 7402 ic description
Contextual Info: STGB10NB37LZ GP10NB37LZ 10 A - 410 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature TAB TAB 3 1 Applications ■ TO-220 2 1 3 D²PAK Automotive ignition

SCHEMATIC dimmer igbt

Abstract: igbt dimmer applications circuit diagram STGF10NB60SD igbt dimmer SCHEMATIC igbt dimmer Q1215 GF10NB60SD
Contextual Info: STGF10NB60SD GP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features • Low on-voltage drop VCE(sat ■ High current capability ■ Very soft ultra fast recovery antiparallel diode TAB Applications ■ Light dimmer ■ Static relays

g1758

Abstract: BYV27-200 byw32-200 G30D GP25M
Contextual Info: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53

Contextual Info: GP10A thru GP10Y www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Low forward voltage drop

GP10NC60KD

Abstract: gb10nc60kd JESD97 STGB10NC60K STGB10NC60KDT4 STGP10NC60K STGP10NC60KD
Contextual Info: STGB10NC60K GP10NC60K N-channel 600V - 10A - D2PAK / TO-220 Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K GP10NC60K 600V 600V <2.5V <2.5V 10A 10A • Lower on voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction

gp10nc60k

Abstract: RG 2006 10A 600V JESD97 STGB10NC60K STGB10NC60KT4 STGD10NC60K STGP10NC60K
Contextual Info: STGB10NC60K - STGD10NC60K GP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB10NC60K GP10NC60K STGD10NC60K 600V 600V 600v <2.5V <2.5V <2.5V 10A 10A 10A

GB10NB60S

Abstract: GB10NB60 STGP10NB60S gb10nb STGB10NB60S STGB10NB60ST4 STGP10NB60SFP SAT-213 k20a
Contextual Info: GP10NB60S GP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C GP10NB60S GP10NB60SFP STGB10NB60S 600 V 600 V 600 V < 1.7 V < 1.7 V

GP10A

Abstract: DO-204AL GP10M GP10N GP10Y
Contextual Info: GP10A thru GP10Y Glass Passivated Junction Rectifier DO-204AL DO-41 1.0 (25.4) MIN. * d e t n e t a Features P • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability

GP10Y- E3

Abstract: GP10J-E3/54 DO-204AL GP10A GP10Y JESD22-B102D J-STD-002B gp10w1500v
Contextual Info: GP10A thru GP10Y Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t n e Pat * Glass-plastic encapsulation