600V 12A Search Results

STGF12NB60KD

Abstract: JESD97 STGB12NB60KD STGP12NB60KD
Contextual Info: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V

st 393

Abstract: JESD97 STGB12NB60KD STGP12NB60KD schematic diagram UPS
Contextual Info: STGB12NB60KD STGF12NB60KD - STGP12NB60KD N-channel 18A - 600V - TO-220 - TO-220FP - D2PAK Short circuit proof PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB12NB60KD 600V < 2.8V 18A STGF12NB60KD 600V < 2.8V 7A STGP12NB60KD 600V < 2.8V

mosfet 600V 20A

Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Contextual Info: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce

cef12n6

Abstract: CEP12N6
Contextual Info: CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N6 600V 0.65Ω 12A 10V CEB12N6 600V 0.65Ω 12A 10V CEF12N6 600V 0.65Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).

b14nk60z

Abstract: P14NK60ZFP p14nk60 P14NK60Z B14NK60 W14NK60Z STP14NK60Z STP14NK60ZFP STW14NK60Z STB14NK60Z
Contextual Info: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 3 1 STP14NK60ZFP 600V <0.5Ω

Contextual Info: STP14NK60Z - STP14NK60ZFP STB14NK60Z/-1 - STW14NK60Z N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STP14NK60Z 600V <0.5Ω 13.5A 160W 1 STP14NK60ZFP 600V <0.5Ω

600V Current Sensing N-Channel IGBT

Abstract: Current Sensing N-Channel IGBT HGTB12N60D1C equivalent 12A600V
Contextual Info: Œ ï ^ « 1 HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12A.600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r D S (O N) .0.27V

GW19NC60WD

Abstract: gw19nc60w
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

GW19NC60WD

Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

12n60d1c

Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
Contextual Info: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω

12n60d1

Abstract: 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c HGTB12N60D1C 12n60d
Contextual Info: HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Package Features • 12A, 600V JE D E C T S -001A A 5 LEAD TO -220 • r • Low VCe(SAT) at 25 A . 2.5V (Typ)

G12N60D1

Abstract: G12N60D1D AN7254 AN7260 HGTG12N60D1D G12N60
Contextual Info: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR BOTTOM SIDE

gp19nc60hd

Abstract: GB19NC60HD gb19nc60 ST IGBT code marking JESD97 STGB19NC60HD STGP19NC60HD to-247 to-220
Contextual Info: STGB19NC60HD STGP19NC60HD N-channel 600V - 19A - TO-220 - D2PAK Very fast PowerMESH IGBT General features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60HD 600V < 2.5V 19A STGB19NC60HD 600V < 2.5V 19A 3 3 1 • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction

Contextual Info: bflE J> HARRIS SEMICOND SECTOR • 43G2E71 0DSD2Sn ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Decem ber 1993 Features Package • 12 A ,600V • JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW r D S (O N ) .0.27V

Contextual Info: SCT12N60FD Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V

Contextual Info: SCT12N60P Triac 600V, 12A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 2 3 Features „ Repetitive Peak Off-State Voltage : VDRM=600V

12n60d1c

Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
Contextual Info: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V

Contextual Info: R6012FNX Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.51W ID 12A PD 50W TO-220FM (3) (1) (2) lFeatures lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

STW12NC60

Abstract: diode F4 6A
Contextual Info: STW12NC60 N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NC60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.55Ω 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

12N60D1D

Abstract: 12n60d1
Contextual Info: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description

STW12NB60

Contextual Info: STW12NB60 N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.6Ω 12 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: KSM12N60C/KSMF12N60C 600V N-Channel MOSFET TO-220 Features • • • • • • TO-220F 12A, 600V, RDS on = 0.65Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

STW12NB60

Contextual Info: STW12NB60 N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh II MOSFET TYPE STW12NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.6Ω 12 A TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

g12n60d1

Abstract: AN7254 AN7260 HGTP12N60D1 G12N60D
Contextual Info: HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package • 12A, 600V JEDEC TO-220AB • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR FLANGE • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device