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cef12n6 Abstract: CEP12N6 Contextual Info: CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N6 600V 0.65Ω 12A 10V CEB12N6 600V 0.65Ω 12A 10V CEF12N6 600V 0.65Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep12n6/ceb12n6 cef12n6 cep12n6 ceb12n6 +4o-263 o-220 o-220f o-220/263	PDF

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cef12n6

Abstract: CEP12N6
Contextual Info: CEP12N6/CEB12N6 CEF12N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP12N6 600V 0.65Ω 12A 10V CEB12N6 600V 0.65Ω 12A 10V CEF12N6 600V 0.65Ω 12A d 10V D Super high dense cell design for extremely low RDS(ON).

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cep12n6/ceb12n6 cef12n6 cep12n6 ceb12n6 +4

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