6 VOLT NPN Search Results

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

by205 diode

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL762 TIPL762A
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

MP4T3243

Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers

sot23 1303

Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
Contextual Info: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers

Contextual Info: SIEMENS FEA TURES MCT270 through MCT277 PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches mm ft] • CTR Minimum: MCT270 - 50% MCT271 -4 5 % MCT272 - 75% MCT273 - 125% MCT274.—225% MCT275 - 70% M C T 2 7 6 -15% MCT277 -1 0 0 % • Withstand Test Voltage - 7500 Volt

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

Contextual Info: Voltage Regulators AN8016NSH Single-channel 1.8-volt step-up DC-DC converter control IC • Overview 5 6 4.3±0.30 0.625±0.10 +0.1 0.15–0.05 Overall height 1.7 max. 0.5±0.2 ■ Features 3.0±0.30 10 0.2±0.1 1 0.625±0.1 0.5 Unit: mm The AN8016NSH is a single-channel PWM DC-DC

2SD2408

Abstract: AN8016NSH MA2Q738 MA738
Contextual Info: Voltage Regulators AN8016NSH Single-channel 1.8-volt step-up DC-DC converter control IC • Overview 6 3.0±0.30 5 0.2±0.1 10 0.625±0.10 0.5 1 1.5±0.2 +0.1 0.15–0.05 0.5±0.2 4.3±0.30 0.625±0.10 ■ Features Unit: mm 0.1±0.1 The AN8016NSH is a single-channel PWM DC-DC

TSS ISI

Contextual Info: Voltage Regulators AN8016NSH Single-channel 1.8-volt step-up DC-DC converter control IC • Overview 0.625±0.1 0.5 +0.1 0.625±0.10 4.3±0.30 0.15–0.05 Overall height 1.7 max. 0.5±0.2 ■ Features 6 di p Pl lan nclu ea e se pla m d m des ne ain ain foll

Contextual Info: Voltage Regulators AN8016NSH Single-channel 1.8-volt step-up DC-DC converter control IC • Overview 6 3.0±0.30 5 0.2±0.1 10 0.625±0.10 0.5 1 1.5±0.2 +0.1 0.15–0.05 0.5±0.2 4.3±0.30 0.625±0.10 ■ Features Unit: mm 0.1±0.1 The AN8016NSH is a single-channel PWM DC-DC

2SC2240-BLTPE2

Contextual Info: Voltage Regulators AN8016NSH Single-channel 1.8-volt step-up DC-DC converter control IC • Overview Unit: mm 3.00±0.20 10 6 +0.10 0.15-0.05 4.30±0.20 6.30±0.30 1.00 0° to 10° 0.50±0.20 1 (0.50) 5 0.50 0.20+0.10 -0.05 1.50±0.20 The AN8016NSH is a single-channel PWM DC-DC

Array resistor 1K

Contextual Info: ALA300/301 90 Volt Linear Arrays Description The ALA300 and ALA301 Linear Arrays provide design engineers the means to obtain 90 V semicustom integrated circuits. The single-module array ALA300 consists of 13 vertical NPN and 15 vertical PNP transistors, three 6 pF capacitors, and 1 kO diffused and 10 kQ ion-implanted resistor banks. The quadmodule array (ALA301) is identical to the single-module array (ALA300) but has four times the number of

2SC3542

Abstract: 2SC3541 NEL1320 NEL132081-12 1300 3d NEL130681 NEL1300 NEL130681-12 CNC12 NEL1306
Contextual Info: NEC/ CALIFORNIA NEC SbE J> m b427MlM 000254*=! 731 » N E C C 'T 'T b - W CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL132081-12 OUTLINE DIMENSIONS FEATURES • H IG H LINEAR PO W ER AN D GAIN: NEL1306: P u b = 38 dBm, G iob = 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB = 6 dB TYP

Contextual Info: SOLITRON DEVICES imç_ t»E t • 83b8b05 0003768 7 1 P » S O D _ h JOLITRON DEVICES PRODUCT SPECIFICATION +6 VOLT REGULATOR Z% c u s t . dw g T Y P E NC. OOC to +70OC Gene ral Purpose Si R EV . - D E V IC E M A R K IN G ST A N D A R D

BJ84

Contextual Info: 8 00 Seríes Miniature Snap-Acting Momentary Pushbutton Switches CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . B Dry Circuit models - 0.4 Volt-Amps max. at 20 Volts max. (AC or DC). G Dry Circuit or Power Circuit models - Same as B and Q - i.e. - can be used in either dry circuit or

Contextual Info: SERIES TL011. TL012, TL014A, TL021 FIXED RATIO NP-N CURRENT MIRRORS D 2 6 1 4 , FE B R U A R Y 1 9 8 4 - R E V IS E D O C T O B E R 198 8 Wide Input Current Range: 1 /tA to 1 mA LP P A C K A G E TOP VIEW 35-Volt Output Capability IN P U T High Output Impedance

Common-cathode 7-segment LED display

Abstract: RCA-2N3053 7 segment displays cd4511 ci cd4511 CD4511 CD4511B CD4511B Types hewlet Wagner Electric ic cd4511
Contextual Info: HA RR IS S E n r C O N B S E CT OR 4 4E D 4302271 m ÜQ37574 ñ SH A S / - U HARRIS C D 4 5 1 1 B 7 T ypes C M O S BCD-to-7-Segment Latch Decoder Drivers 2 High-Voltage Types (20-Volt Rating) ' lO l/ g lJ M iS ib lT S W I I 2 3 4 5 6 ? 8 — e— A I C

Contextual Info: TYPE 2N3M N-P-N SILICON TRANSISTOR B U L L E T IN NO . D L -S 737397, M A R C H 1 9 6 5 - R E V IS E D M ARCH 1973 DESIGNED FOR USE AS HIGH VOLTAGE VHF AMPLIFIER • Featuring 150-Volt V U CC0 I m e ch an ical d a ta ab so lu te m a x im u m r a tin g s a t 2 5 °C fre e -a ir tem p eratu re (unless otherw ise noted)

TRANSISTOR K 1507

Contextual Info: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN

Contextual Info: JUN b a Data Sheet AT&T ALA300/301 90 Volt Linear Arrays Description The ALA300 and ALA301 Linear Arrays provide design engineers the means to obtain 90 V semicustom integrated circuits. The single-module array ALA300 consists of 13 vertical NPN and 15 vertical PNP

IL208

Abstract: IL206 IL207 IL215 IL205 IL211 IL212 IL213 IL216 IL217
Contextual Info: IL205, IL206, IL207, IL208, IL211, IL212, IL213, IL215, IL216, IL217 SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION 8 7 6 5 This series of optically coupled isolators consist of a Gallium Arsenide infrared emitting diode and NPN silicon photo transistor mounted in a standard 8 pin

IL207A

Abstract: IL206A IL208A IL211A IL212A IL213A IL215A IL216A IL217A IL205A
Contextual Info: IL205A, IL206A, IL207A, IL208A, IL211A, IL212A, IL213A, SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION 8 7 6 5 This series of optically coupled isolators consist of a Gallium Arsenide infrared emitting diode and NPN silicon photo transistor mounted in a standard 8 pin

Contextual Info: IL205A, IL206A, IL207A, IL208A, IL211A, IL212A, IL213A, SMALL OUTLINE OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION 8 7 6 5 This series of optically coupled isolators consist of a Gallium Arsenide infrared emitting diode and NPN silicon photo transistor mounted in a standard 8 pin