6 PIN Z10B Search Results

KMZ10B

Abstract: Magnetic Field Sensor MLC716 magnetic sensor circuit diagram MGD802 Thin-film magnetic resistance SOT195 MAGNETIC PROXIMITY SENSOR application note MSA927 msa-927
Contextual Info: Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION The K M Z10B is a sensitive m agnetic field sensor, em ploying the m agnetoresistive effect of thin-film perm alloy. Its properties enable this sensor to be used in a w ide range of applications fo r current and field

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

"Angle Sensor"

Abstract: KMZ11B1 KMZ10B Angle Sensor scale sensor KMZ10 kmz110b
Contextual Info: Philips Semiconductors Preliminary specification Angle sensor hybrid circuit KM110BH/2270 FEA TUR ES PIN N IN G • Angle measuring range 70° PIN • Contactless, therefore wear-free and no micro-linearity problems • Easy to mount, ready for use D E S C R IP T IO N

M80062

Abstract: kmz110b Sm2CO17 scale sensor lte in philips philips hybrid "Angle Sensor" KMZ10B KMZ11B1 HYBRID SEMICONDUCTORS
Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E T> bbS3T31 0 0 3 2 7 0 M TÔT H A P X Philips Semiconductors Preliminary specification A n g le s e n s o r hybrid circu it K M 110B H /22 70 P IN N IN G F EA TU R E S • Angle measuring range 70° PIN • Contactless, therefore wear-free and no micro-linearity

AD579ZJN

Abstract: 32-PIN AD579 AD579JN AD579KN AD579TD AD579ZKN DH-32B
Contextual Info: ANALOG DEVICES 1LE D INC • OSltSDO D01fl2fl7 4 ■ Very Fast, Complete 10-Bit A/D Converter T-SMO-IO AD579 A N A LO G D E V IC E S AD579 FUNCTIONAL BLOCK DIAGRAM FEA TU R ES Performance Complete 10-Bit A /D Converter with Reference and Clock Fast Successive Approximation Conversion: 1 .8/js

KMZ10B

Abstract: SOT195 Magnetic Field Sensor 0032L
Contextual Info: Philips Semiconductors ^ £ 3 ^ 3 1 QD32f c. 3b Product specification IAPX SMS KMZ10B Magnetic field sensor N AMER DESCRIPTION P H IL b^E IPS/DISCRETE D PIN CONFIGURATION The KMZ10B is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film

Contextual Info: Philips Semiconductors Product specification Magnetic field sensor KMZ10B DESCRIPTION The KMZ1 OB is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field

RO3010

Abstract: C14A z14b
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

Z14b

Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

z14b

Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Z14b

Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

Vj3640Y

Abstract: transistor L1A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

C13B

Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this