5V SCHOTTKY BARRIER Search Results

Contextual Info: Ordering number : EN3240C 1SS351 Schottky Barrier Diode http://onsemi.com Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP Features • • • Series connection of 2 elements in a small-sized package facilitates high-density mounting and

MCD1320F

Abstract: MD1320F VB26
Contextual Info: 3.3V/5V Output MD1320F DESCRIPTION The MD1320F is a high-efficiency step down DC-DC converter power integrated circuit with main MOSFET switch and Schottky Barrier Diode. The MD1320F can deliver15watts maximum 5V, 3.0A with high efficiency over a wide input voltage range.

step up dc-dc 12v to 48v 24 amp

Abstract: MD1620F STOP10 1221N
Contextual Info: 5V Output MD1620F DESCRIPTION The MD1620F is a high-efficiency step down DC-DC converter power integrated circuit with main MOSFET switch and Schottky Barrier Diode. MD1620F can deliver 10watts maximum 5V, 2.0V with high efficiency over a wide input voltage range. With the MD1620F

S3 Package

Contextual Info: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V @ IF=10mA • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code

YG803C06

Abstract: application FULL WAVE RECTIFIER diode full wave rectifier 6 v
Contextual Info: YG803C06 15A Schottky barrier diode (60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Tj=125°C, typ Applications Features Low VF Optimized for 3.3V 5V output application

YG803C06

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

Contextual Info: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= max 0.3V @ IF=1mA • Low reverse current : IR= max 0.5 ㎂ (@ VR=5V) Ordering Information Type No. Marking SDB110Q S3 Package Code SOD-523 Outline Dimensions unit : mm 0.8±0.1

MD1320N

Contextual Info: 3.3V/5V Output MD1320N 14.1MAX 13.6 DESCRIPTION Dimensions = mm + – 0.1 32 The MD1320N is a high-efficiency step down DC-DC converter 17 Company Name power integrated circuit with main MOSFET switch and Schottky + 7.5 – SHINDENGEN MD1320N 5038N Barrier Diode. The MD1320N can deliver 7.5 watts maximum

SPF-2086

Abstract: 175C 2-18 GHz Low Noise Gallium Arsenide FET SPF2086
Contextual Info: Product Description SPF-2086 Stanford Microdevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21dBm at 5V and 50mA. This device

spf 2086

Abstract: SPF-2086
Contextual Info: Product Description SPF-2086 Stanford M icrodevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21 dBm at 5V and 50mA. This device

shindengen m

Contextual Info: Shindengen 3.3V /5V Output MD1320N 14.1 M AX Dimensions = mm Americajnc. DESCRIPTION 13.6 : The M D1320N is a high-efficiency step down DC-DC converter 17 32 Company Name power integrated circuit with main M O SFET switch and Schottky Type No. Barrier Diode. The M D1320N can deliver 7.5 watts maximum

SPF-2076

Contextual Info: SPF-2076 Product Description Stanford M icrodevices’ SPF-2076 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 1-23 GHz, Low Noise PHEMT G a As FET 1dB output power is +21 dBm at 5V and 50mA. This device

2SC100

Contextual Info: Surface Mounting Device y B y Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D1FS4A Case : 1F U n ii : m m Weight : .06g ° — i37 - - K T ~ ? 40V 1.5A •^JvffiSMD • T j I 5013 • 1 £ V f = 0 .4 5V 7 r r s m / ß V '> i ß 11 +5 • S R B if i

MAX247

Abstract: STPS80L15CY 5g30
Contextual Info: STPS80L15CY  LOW DROP OR-ing POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A1 K MAX 247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

STPS80L15CY

Contextual Info: STPS80L15CY  LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

Contextual Info: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

a17 smd diode

Abstract: marking smd NU JT MARKING smd marking MY SM3 DIODE
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u tlin e Package :G1F DG1M3A Unu:mm W eight O .O llii Typ in 30V 1.5A Feature • g /J 'fflS M D • Ultra-small SMD • |g n i^ = 0 .8 m m • Ultla-thin PKG=0.8mm • < 5V f = 0 .4 6 V • Low V f-0 .46V • 1KIr = 0.05mA

smd diode marking 2J

Abstract: IR LFN smd a4t K711 DIODE vn SMD DG1S6 LFN ir marking ANs diode smd marking S0
Contextual Info: Schottky Barrier Diode Single Diode W W DG1S6 W O U T L IN E Package : G 1 F Uim:mm Weight O.Ollg Typ 60 V 1A 3.5 @ Feature • Ultra-small SMD • fè iìl5 k = 0 .8 m m • <5V f=0.58V - I | K 7 1 QD— 1 M — °2 > • Ultra-thin PKG=0.8mm • Low Vf-0 .58V

SR3045

Contextual Info: SURGE SCHOTTKY BARRIER RECTIFIERS OPERATING TEMPERATURE RANGE 2 0 V to 4 5V : - 6 5 ° C t o + 1 2 5 °C 5 0 V to 6 0V : - 6 5 ° C to + 1 5 0 °C STORAGE TEMPERATURE - 6 5 ° C t o ^ 1 5 0 ° C Maximum Peak SURGE PART NUMBER Reverse V oltage M axim um A verage

sr540 diode

Contextual Info: SCHOTTKY BARRIER RECTIFIERS PLASTIC M ATERIAL USED CAR R IES UL 94V-0 O PERATING TEM PE R A TU R E RANGE 20V to 4 5V : -65 °C to +125 "C 50V to 6 0V : -65 °C to +150 °C & AiàLfo'feïÆ.'iÆ TYPE M a xim u m Peak R everse V o lta g e PRV VpK jt&'Krêmfcffr'&aii

Contextual Info: £t7 STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PR ELIM IN ARY DATASHEET MAIN PRODUCT CHARACTERISTICS If av 2 x40 A V rrm 15 V Tj (max) 125 °C V f (max) 0.33 V FEATURES AND BENEFITS • Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A ■ 15V BLOCKING VOLTAGE SUITABLE FO R 5V

STPS80L15CY

Contextual Info: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS n n n n n Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V

STPS80L15CY

Contextual Info: STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF AV 2 x 40 A VRRM 15 V Tj (max) 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS n n n n n Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V