SPF2086 Search Results

SPF-2086T

Abstract: spf 557 sirenza LNA sirenza fet
Contextual Info: Preliminary SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

phemt Gh

Contextual Info: Preliminary SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

spf 557

Abstract: SPF-2086TK SPF2086 SPF2086TK SPF 775 SPF-2086 sirenza fet
Contextual Info: SPF-2086TK Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

SPF2086TK

Contextual Info: ô ta, îîYices -ï SPF-2086TK 0.1-4 GHz Low Noise PHEMT GaAs FET Absolute Maximum Ratings at 25C Parameter Absolute Maximum Drain-Source Voltage Vds +7V Gate-Source Voltage (Vgs) -7V Drain Current (Ids) Idss Forward Gate Current (Igst) 10mA RF Input Power (Pin)

spf 2086

Abstract: SPF-2086
Contextual Info: Product Description SPF-2086 Stanford M icrodevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21 dBm at 5V and 50mA. This device

SPF-2298

Abstract: SHF-0185
Contextual Info: Thermal Data Part Rth,typ Number deg C\W SHF-0100D 61.2 SHF-0184 81.2 SHF-0185 81.2 SHF-0186 92.1 SHF-0198 65.5 SHF-0200D 31.2 SHF-0298 35.5 SHF-0500D 15.7 SHF-0598 19.8 SHF-1000D 7.9 SHF-1099 10.4 SPF-2086 298.0 SPF-2098 268.0 SPF-2298 136.0 SMM-008 60.0

14241 FET

Abstract: SPF-2086TK SPF2086TK
Contextual Info: Preliminary SPF-2086TK Product Description Stanford Microdevices’ SPF-2086TK is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates. This device is ideally biased at Vds=3V and Id=20mA for lowest

2-18 GHz Low Noise Gallium Arsenide FET

Abstract: m3636 175C SPF-2086
Contextual Info: ¿•[I Stanford Microdevices Product Description SPF-2086 Stanford M icrodevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise

Contextual Info: gH Stanford Microdevices Product Description SPF-2086 Stanford M icrodevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT G a As FET

SPF-2086

Abstract: 175C 2-18 GHz Low Noise Gallium Arsenide FET SPF2086
Contextual Info: Product Description SPF-2086 Stanford Microdevices’ SPF-2086 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 0.1-12 GHz, Low Noise PHEMT GaAs FET 1dB output power is +21dBm at 5V and 50mA. This device

SNA-486

Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
Contextual Info: Table of Contents Model Description SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 Low-Noise GaAs FETs 1-2GHz 0.8dB NF r 2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB NF {n}4GHz 2-26GHz 0.6dB NF ® 12GHz 2-26G H z0.5dB N F ® 12G H z

SPF-2086TKZ

Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
Contextual Info: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10

spf 557

Abstract: SPF-2086T SPF2086T sirenza fet
Contextual Info: SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

SPF2086TK

Contextual Info: Preliminary SPF-2086TK Product Description Stanford Microdevices’ SPF-2086TK is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates. This device is ideally biased at Vds=3V and Id=20mA for lowest

SPF-2086TK

Abstract: SPF2086TK sirenza fet
Contextual Info: Preliminary SPF-2086TK Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086TK is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

SPF-2086T

Abstract: sirenza fet spf 557
Contextual Info: SPF-2086T Product Description Low Noise pHEMT GaAs FET Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At

SPF-2086T

Abstract: SPF-2086
Contextual Info: Preliminary SPF-2086T Product Description Stanford Microdevices’ SPF-2086T is a high performance PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by 300 micron wide Schottky barrier gates. This device is ideally biased at Vds=3V and Id=20mA for lowest