5SMX Search Results

abb press-pack igbt

Abstract: 5slx12n4506
Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

6smx

Abstract: Specification Quartz Crystals
Contextual Info: 6SMX Crystals ISSUE 5; 28 SEPTEMBER 2004 Outline in mm Delivery Options 11.8 5.5 Please contact our sales office for current leadtimes 6SMX surface mount crystals are housed in a hermetically resin sealed ceramic package • A pad to pad replacement for the 5SMX & 32SMX

abb igbt die

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1274 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1301-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

abb press-pack igbt

Abstract: 12L2516
Contextual Info: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2516 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1317-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

abb igbt die

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 PRELIMINARY Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1280 PRELIMINARY Die size: 12.6 x 12.6 mm Doc. No. 5SYA1309-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1262 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1631-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

Contextual Info: VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1274 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1304-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1262 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1628-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

IGBT abb

Abstract: 5SLX12L2510 a7050 V15C
Contextual Info: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

IGBT abb

Abstract: 5SMX 12M3300 5SLX12M3301 5SMX12M3300
Contextual Info: VCE IC = = 3300 V 50 A IGBT-Die 5SMX 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1621-02 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4506 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1624-02 Aug 04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

abb press-pack igbt

Contextual Info: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1640-00 Mar 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride

5SLX12E1200

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

12K12

Abstract: 5SLX12F1200
Contextual Info: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

IGBT abb

Abstract: 5SLX12E1200
Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1273 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1632-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

IGBT 6500 V

Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-02 July 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

12M6501

Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6501 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-03 11 11 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage

Contextual Info: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1252 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1623-01 Apr 04 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions

5SMX 12M6500

Abstract: 5SMX
Contextual Info: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-00 Mrz.05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide