5SLX12E1200 Search Results

abb igbt die

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1274 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1301-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

abb igbt die

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 PRELIMINARY Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1262 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1628-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

9280A

Abstract: 5SLX12E1200
Contextual Info: 9& ,&  9  $ ,*%7'LH 60; + 'LH VL]H  [  PP Doc. No. 5SYA 1616-01 July 03 • /RZ ORVV WKLQ ,*%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ • /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV  3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV

5SLX12E1200

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

IGBT abb

Abstract: 5SLX12E1200
Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1273 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1632-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage

5SLX12E1200

Contextual Info: 9& ,&  9  $ ,*%7'LH 60; ( 'LH VL]H  [  PP Doc. No. 5SYA1615-01 July 03 • /RZ ORVV WKLQ ,*%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ • /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV  3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV

CH-5600

Abstract: 5SYA2033-01 5SLX12E1200
Contextual Info: 9& ,&  9  $ ,*%7'LH 60;+ 'LH VL]H  [  PP ‡ ‡ ‡ Doc. No. 5SYA1607-01 Aug 02 /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD 0D[LPXP 5DWHG 9DOXHV 3DUDPHWHU Collector-Emitter Voltage (Tj = 25°C, unless specified otherwise

Contextual Info: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide

Contextual Info: 9& ,&  9  $ ,*%7'LH 60;( 'LH VL]H  [  PP ‡ ‡ ‡ Doc. No. 5SYA1601-03 Aug 02 /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 137 GHVLJQ /DUJH IURQW ERQGDEOH DUHD 0D[LPXP 5DWHG 9DOXHV 3DUDPHWHU Collector-Emitter Voltage (Tj = 25°C, unless specified otherwise

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications

Contextual Info: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1274 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1302-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area