5C MARKING CODE SOT23 Search Results

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZXXALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

BC807 spice model

Abstract: 103 k5c k5b transistor switch k5c BC807-XX marking 5B BC807-16 BC807-25 BC807-40 BC817
Contextual Info: SPICE MODELS: BC807-16 BC807-25 BC807-40 BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features • · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary NPN Types Available BC817

Transistor BC817

Contextual Info: BC807 PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary NPN type available BC817 MECHANICAL DATA • Case: SOT-23 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃

IMBT4403

Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Contextual Info: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C

BC807

Abstract: BC807-16 BC807-25 BC807-40 BC817
Contextual Info: BC807 PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary NPN type available BC817 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL

Contextual Info: BC807 PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary NPN type available BC817 MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Schottky LBAT54CLT1G Barrier Diodes 3 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

15a sot-23

Abstract: sot-23 MARKING CODE 21 zener 5A6 MMBZ10VALT1 MMBZ12VALT1 MMBZ15VALT1 MMBZ18VALT1 MMBZ20VALT1 MMBZ27VALT1 MMBZ33VALT1
Contextual Info: MMBZ5V6ALT1 Series Preferred Devices 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors SOT-23 Dual Common Anode Zeners for ESD Protection Specification Features: • SOT-23 Package Allows Either Two Separate Unidirectional • • • • • •

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

Contextual Info: BC807, BC808 Small Signal Transistors PNP FEATURES SOT-23 ♦ PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier " applications. ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16,

Contextual Info: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)

A12 marking

Abstract: FMMT-A92R A92 at device marking code S4 Diode marking m7 marking 7E Marking H2 transistor dg sot-23 FMMT-A42 FMMT-A43
Contextual Info: 4 FERRANTI semiconductors FMMT-A92 FMMT-A93 PNP S ilico n Planar High V o lta g e T ra n sis to rs G ENER AL D E S C R IP T IO N These plastic encapsulated, general purpose transistors are designed fo r applications requiring high b re a k d o w n voltages,

Contextual Info: MMBZ52XXX 410mW SOT-23 Series Surface Mount Zener Voltage Regulator Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES Planar Die Construction 410mW Power Dissipation on FR-5 PCB A General Purpose, Medium Current

IRLML6402

Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
Contextual Info: PD - 93755B IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLML6401

Abstract: marking code IRLML6401 IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6302 marking
Contextual Info: PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier

IRLML6302 marking

Abstract: irlml2402 marking code IRLML2502 IRLML6302 IRLML6401 SOT-23 marking code IRLML6401
Contextual Info: PD - 91259E IRLML6302 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

irlml2502

Abstract: IRLML2502 G IRLML5103 IRLML5103 -30V
Contextual Info: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

irlml2803 B

Abstract: IRLML6401 IRLML2502 G irlml5103 1D IRLML5203 H IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402
Contextual Info: PD - 91258D IRLML2803 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 30V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier

TL431BU

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components TL431BU Features • • • • • • Programmable Output Voltage 36V Sink Current Capability of 0.1mA to 100 mA