5B4 IR Search Results

Contextual Info: NEC ELECTRONICS INC fc.EE D • b427S25 D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­

Contextual Info: 4 PART NO. I 3 2 1 CA-XXDSID-X-X-SR REVI5IQN5 DESCRIPTION INITIAL RELEA5E 5EE ECR IS46 5EE DQ 5787_ C I 5EE D ,B L A N K STRAIN DQ 5B4-9_ DL l-ZZ-99 DL Z-Z-00 A.J. A.J. 5EE DQ 47 I 1_ CP IZ-OI

TS802C09

Abstract: ze 003 ic
Contextual Info: TS802C09 10A SCHOTTKY BARRIER DIODE I Outline Drawing • Features Connection Diagram • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design H Applications • High speed power switching ■ Maximum Ratings & Characteristics

7B423

Contextual Info: ADVANCE INFORMATION PI74ALVTC16344

Contextual Info: Provisional Data Sheet No. PD - 9.1716 International IO R Rectifier IRFE9130 dv/dt R A TED J ANTX2N6849U HEXFET TRANSISTOR JANTXV2N6849U JANS2N6849U [REF:M IL-PRF-19500/564] R E P E T IT IV E A V A LA N CH E A N D P-CHANNEL Product Summary -1 OOVolt, 0.30Q, HEXFET

5B4 RECTIFIER

Contextual Info: 4035452 DDlSflTS Ô55 International [k ] Rectifier PD-9.634A IINR IRLD120 bSE D INTERNATIONAL RECTIFIER HEXFET® Pow er M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Logic-Level Gate Drive RDS on Specified at V g s = 4 V & 5V

Contextual Info: P D - 9.1586 International IOR Rectifier 4 30 S IRG PC PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

6B4 diode

Abstract: diode 7B4 PI74ALVTC16344A PI74ALVTC16344K
Contextual Info: PI74ALVTC16344

3RW2.5

Contextual Info: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES REVERSE RECOVERY TIME EDI Type PRV Volts 3W2 2,000 not applicable 3W2.5 2,500 not applicable 3W3 3,000 not applicable 3RW2 2,000 250 ns max. 3RW2.5 2,500 250 ns max. 3RW3 3,000 250 ns max.

Contextual Info: International i ^ Reclifier PD91340 IRF520NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D escriptio n Fifth Generation HEXFETs from International Rectifier

ni32

Abstract: S15C3 A1m anode OLD122CP3 OLD222CP OLP122CP3 OLP222CP T36CP2 T54LCP
Contextual Info: O K I electronic components OLP 122 CP3 , OLP222 CP LED Capsule GENERAL DESCRIPTION The OLD122CP3/OLD222CP are sensors that are most suited to paper detection. For superior dustproof packaging and easy mounting, an infrared LED can be sealed encapsulated into a

5B4 bridge rectifier

Contextual Info: y IN T E G R A T E D C IR C U IT S UC1852 UC2852 UC3852 U N IT R O D E High Power-Factor Preregulator FEATURES DESCRIPTION • The UC1852 provides a low-cost solution to active power-factor correction PFC for systems that would otherwise draw high peak current pulses from AC power

Contextual Info: DOMINANT Opto Technologies Innovating Illumination TM DATA SHEET : DomiPlusTM 60 InGaN Warm White : DPF-EJG-3ZCA-1 Product carrier tape will be changed. Product Change Notice issued on 25 April 2012. DomiPlus TM With the intense colors that seem to glow with energy and its significant

Contextual Info: ADVANCE INFORMATION PI74AVC+16344

transistor 5BM

Abstract: 100-C 2N7079
Contextual Info: T e m ic 2N7079 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS(V) rnsfcm) (Ö) I d (A) -100 0.210 -1 7 TO-254AA Herm etic Package o 1 O— i I1 It Case Isolated Ô D

Contextual Info: O K I electronic components OCM 1X0, 1X1 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM1X1 Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

Contextual Info: DOMINANT Opto Technologies Innovating Illumination TM DATA SHEET : Primax5TM 150 InGaN Warm White : NSF-FSC Primax TM Synonymous with function and performance, enter the Primax, the new era of high intensity illumination in LED. With its high flux output and high

5B4 IR

Abstract: oki Photo MOS Relay OCM110 OCM111 OCM120 OCM121 0CM110
Contextual Info: O K I electronic components OCM 1X0, 1X1 S E R IE S Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1XO and OCM 1XI Series are unidirectional DC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

SN74ALVCH16344

Abstract: X12V
Contextual Info: SN74ALVCH16344 1-T0-4 ADDRESS DRIVER WITH 3-STATE OUTPUTS S C E S 054C - S E P TE M B E R 1995 - REVISED JU LY 1997 I I • I I I • DGG OR DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process

Contextual Info: wgm H E W L E T T mLftm P A C K A R D 940 nm High Radiant E m itters Technical Data HEMT-3301 HEMT-1001 Features Description • Nonsaturating, High Radiant Flux Output • E fficient at Low Currents, Combined w ith High Current Capability • Three Package Styles

Contextual Info: XX-xxxx; Rev 0; 6/94 SV/3.3V or Adjustable, High-Efficiency, Low Dropout, Step-Down DC-DC Controllers The MAX 1649/MAX 1651 BiCMOS, step-down, DC-DC switching controllers provide high efficiency over loads ranging from 10mA to more than 2.5A. A unique, currentlimited pulse-frequency-modulated PFM control scheme

Contextual Info: AUGAT/ INTCON PRDT 4=]E ]> GP 10^5335 0001bb3 24b H A U I P APBE I S E R I E S * -is-*/ Pushbutton Switches Process Sealed for Washing PC Retention Terminais SPECIFICATIONS Contacts:. gold plated

SF5B42

Abstract: SF5D42 SF5B SF5G
Contextual Info: THYRISTOR S F 5 B,D,G,J 42 SILICON DIFFUSED TYPE M E D I U M P OW ER C O N T R O L A P P L I C A T I O N S . Unit in m m 0 :i.6 ± a z J0.5M AX. . R e p e t i t i v e Peak O f f - S t a t e V o l t a g e V DRM R e p e t i t i v e 1’ eak Kever.se V o l t a g e

DPDT SWITCHES

Abstract: dpdt rf switch
Contextual Info: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a