5A IGBT Search Results

GD5NB120SZ

Abstract: dimmer diagrams IGBT STGD5NB120SZ STGD5NB120SZ-1 STGD5NB120SZT4
Contextual Info: STGD5NB120SZ STGD5NB120SZ-1 N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE sat IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)

GD5NB120SZ

Abstract: STGD5NB120SZT4 SCHEMATIC igbt dimmer STGD5NB120SZ gd5n dimmer diagrams IGBT STGD5NB120SZ-1 marking c2 diode gd5nb
Contextual Info: STGD5NB120SZ-1 STGD5NB120SZ N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE sat IC STGD5NB120SZ STGD5NB120SZ-1 1200 V 1200 V < 2.0 V < 2.0 V 5A 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE

Contextual Info: FGP5N60UFD tm 600V, 5A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.9V @ IC = 5A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series

sttab12d

Abstract: dimmer diagrams IGBT STGD5NB120SZ-1 STGD5NB120SZ
Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V INTERNALLY CLAMPED PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 1.8 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY

GT5J301

Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)

Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)

ZXGD3003E6

Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

STGD5NB120SZ

Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V IPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 2.0 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

STGD5NB120SZ

Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V IPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 2.0 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

gd5nb

Abstract: GD5NB120 GD5NB120SZ dimmer diagrams IGBT STGD5NB120SZ-1 gd5n STGD5NB120SZ
Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V IPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 2.0 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

2N6975

Abstract: 2N6976 2N6977 2N6978 AN7254 AN7260 2N697
Contextual Info: 2N6975, 2N6976, 2N6977, 2N6978 Semiconductor 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds

2N6975

Abstract: 2n6978 2N6976 2N6977 AN7254 AN7260
Contextual Info: 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds

Contextual Info: FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.7V @ IC = 5A Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.

TRANSISTOR BJ 003

Abstract: 2-10R1C GT5J301
Contextual Info: TO SHIBA GT5J301 GT5 J 3 0 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 ±0.3 r The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. (l£ = 5A) Low Saturation Voltage : V ce (sat)~ 2.7V (Max.) (l£ = 5A)

2N6977

Abstract: 2N6975 2N6976 2N6978 AN7254 AN7260 igbt 2n6975 2N697
Contextual Info: 2N6975, 2N6976, 2N6977, 2N6978 S E M I C O N D U C T O R 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage

Contextual Info: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000

982A

Abstract: IR21364 COMPACT hybrid MODULE ic PWM 2000 IRAM136-0760A marking R1E AN-1044 AN-1049 HIN222
Contextual Info: PD-97333 RevA Integrated Power Hybrid IC for Appliance Motor Drive Applications IRAM136-0760A Series 5A, 600V with Open Emitter Pins Description International Rectifier's IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC with Open Emitter pins for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator

5n100

Abstract: 5N100A
Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM

IXTH5N100A

Abstract: gs 1117 ax
Contextual Info: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000

2N5978

Contextual Info: b6E D HA RR IS S E M I C O N D SE CT OR 43 0 2 2 7 1 D D S Q S M b öbS I IHAS 2N6975, 2N6976 2N6977, 2N6978 fjl H A R R I S W • S E M I C O N D U C T O R 5A, 400V and 500V N-Channel IGBTs December 1993 Features Package • 5A, 400V and 500V • JEDEC T0-204AA

ULTRA FAST diode 400v 5a

Abstract: inverterdriven igbt 100V 5A IGBT Driver 10a 400V ultra fast diode d2pak
Contextual Info: FGB5N60UNDF tm 600V, 5A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •