5A IGBT Search Results

Contextual Info: FGP5N60UFD tm 600V, 5A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.9V @ IC = 5A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series

sttab12d

Abstract: dimmer diagrams IGBT STGD5NB120SZ-1 STGD5NB120SZ
Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V INTERNALLY CLAMPED PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 1.8 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY

GT5J301

Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)

Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)

ZXGD3003E6

Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

STGD5NB120SZ

Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V IPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 2.0 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

STGD5NB120SZ

Contextual Info: STGD5NB120SZ-1 N-CHANNEL 5A - 1200V IPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE sat IC STGD5NB120SZ-1 1200 V < 2.0 V 5A • ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT

2N6975

Abstract: 2n6978 2N6976 2N6977 AN7254 AN7260
Contextual Info: 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds

Contextual Info: FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability • Low Saturation Voltage: VCE sat =1.7V @ IC = 5A Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.

TRANSISTOR BJ 003

Abstract: 2-10R1C GT5J301
Contextual Info: TO SHIBA GT5J301 GT5 J 3 0 1 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 ±0.3 r The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. (l£ = 5A) Low Saturation Voltage : V ce (sat)~ 2.7V (Max.) (l£ = 5A)

5n100

Abstract: 5N100A
Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

Contextual Info: TOSHIBA MIG5Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG5Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package • Output Inverter Stage : 30 5A/1200V IGBT •

PS21542-N

Abstract: planar transformer mounting in pcb
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21542-N PS21542-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21542-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

Contextual Info: Preliminary Datasheet RJH60A81RDPD-E0 600V - 5A - IGBT Application: Inverter R07DS0804EJ0200 Rev.2.00 Jul 12, 2012 Features • Reverse conducting IGBT with monolithic diode  Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage

PS21552-N

Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21552-N PS21552-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21552-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

PS21352-N

Abstract: 3th2
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21352-N PS21352-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21352-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

Contextual Info: Preliminary Datasheet RJH60A81RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1092EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage

delay timer circuit diagram

Abstract: PS21342-N
Contextual Info: MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR <Intelligent <Intelligent Power Power Module> Module> PS21342-N PS21342-N TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21342-N INTEGRATED POWER FUNCTIONS 600V/5A low-loss 4th generation planar IGBT inverter

Contextual Info: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TENTATIVE GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 5A)

Contextual Info: Preliminary Datasheet RJH60A01RDPD-A0 600V - 5A - IGBT Application: Inverter R07DS1091EJ0100 Rev.1.00 Jul 04, 2013 Features • Reverse conducting IGBT with monolithic diode • Short circuit withstand time 5 s typ. • Low collector to emitter saturation voltage

Contextual Info: AOS Semiconductor Reliability Report AOD5B60D, 600V, 5A Alpha IGBT TM with Diode Rev. A ALPHA & OMEGA Semiconductor, Inc www.aosmd.com AOS Reliability Report 1 TM The Alpha IGBT line of products offers best-in-class performance in conduction and switching

diode Vr 1200v

Abstract: "Power Diode" 1200V 5A DIODE ERW08-120 1200V fast
Contextual Info: ERW08-120 5A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current

Contextual Info: FUJI m uselfdsoe ; IGBT & FWD 1200 V 5A 1MB 05D-120 Fuji Discrete Package IGBT Outline Drawing • Features • Square RBSOA •Low Saturation Voltage • Less Total Power Dissipation •Minimized Internal Stray Inductance ■ Applications High Power Switching