5817 SMA Search Results

IEC-825

Contextual Info: DWDM-SFP-5817-AS Preliminary Product Specification Long-Reach DWDM SFP Transceiver PRODUCT FEATURES • Up to 4.25 Gb/s bi-directional links • High launch power +3dBm MIN • Hot-pluggable SFP footprint • Temperature-stabilized DWDMrated DFB laser transmitter

Diode marking CODE 5M SOD

Contextual Info: NSD914XV2T1 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available http://onsemi.com

2n2905A

Contextual Info: 2N2905A Small Signal Switching Transistor PNP Silicon http://onsemi.com Features • MIL−PRF−19500/290 Qualified • Available as JAN, JANTX, and JANTXV COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage

Contextual Info: NSD914XV2T1 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package Pb−Free Package is Available http://onsemi.com

JANTX2N2907

Abstract: 2N2907A JAN2N2907 *5bs* transistor JANTXV2N2907A jantx2n2907a
Contextual Info: 2N2907A Small Signal Switching Transistor PNP Silicon http://onsemi.com Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage

Contextual Info: NZD5V1MUT5G Product Preview Zener Voltage Regulators 200 mW Micro Packaged This Zener diode is designed to provide voltage regulation protection and is especially attractive in situations where space is at a premium. Because of its small size, it is suited for use in mobile

marking AMG

Abstract: NSV1SS400T1G 1SS400T1G
Contextual Info: 1SS400T1G, NSV1SS400T1G High-Speed Switching Diode Features • • • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package AEC−Q101 Qualified and PPAP Capable

SBAS16XV2T1G

Abstract: BAS16XV2T1 SOD-52 SOD523 marking A6
Contextual Info: BAS16XV2T1, BAS16XV2T5, SBAS16XV2T1G Switching Diode Features • • • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn Tin Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package AEC−Q101 Qualified and PPAP Capable

Contextual Info: NSR0115CQP6T5G Two Dual 15 V, 0.1 A Common Cathode Schottky Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Industry leading smallest

0201 footprint

Abstract: p12mm
Contextual Info: CM1242-07CP 1-Channel Ultra Small 0201 Package ESD Protection Device in 0201 Description http://onsemi.com The CM1242−07CP is a 2−bump ESD protection device in 0201 form factor. It is fully compliant with IEC 61000−4−2. The CM1242−07CP is also RoHS II compliant and has a pure tin finish.

Contextual Info: NSR0170HT1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0170H in a SOD−323 small footprint package enables designers

Contextual Info: CM1242-07CP 1-Channel Ultra Small 0201 Package ESD Protection Device in 0201 Description http://onsemi.com The CM1242−07CP is a 2−bump ESD protection device in 0201 form factor. It is fully compliant with IEC 61000−4−2. The CM1242−07CP is also RoHS II compliant and has a pure tin finish.

MBRA160T3G

Abstract: SMA CASE 403D-02 footprint
Contextual Info: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: NVMFS5834NL Product Preview Power MOSFET 40 V, 9.3 mW, 76 A, Single N−Channel Features • • • • • Small Footprint 5x6 mm for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified

Contextual Info: MBRA120ET3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT−723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

Contextual Info: 2N2907A Small Signal Switching Transistor PNP Silicon http://onsemi.com Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage

Contextual Info: BSP52T1G, BSP52T3G NPN Small-Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

SBAV99W

Abstract: SBAV99WT1G SBAV99RWT1G bav99wt1g
Contextual Info: BAV99WT1G, SBAV99WT1G, BAV99RWT1G, SBAV99RWT1G Dual Series Switching Diodes http://onsemi.com The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Features SC−70 CASE 419 • These Devices are Pb−Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique

MBRA140T3G

Contextual Info: MBRA140T3G, NRVBA140T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

MBRA130LT3G

Abstract: b1l3
Contextual Info: MBRA130LT3G, NRVBA130LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

Contextual Info: 2N2222A Small Signal Switching Transistor NPN Silicon http://onsemi.com Features • MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV COLLECTOR 3 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value

NRVA4006

Abstract: NRVA4003T3G MRA4003T3G PPAP MANUAL NRVA4007T3G MRA4004T3G NRVA4004T3G NRVA4006T3G PPAP terminal MRA4007T3G
Contextual Info: MRA4003T3G Series, NRVA4003T3G Series Surface Mount Standard Recovery Power Rectifier SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive applications. Features • Compact Package with J−Bend Leads Ideal for Automated Handling

MBRA210LT3G

Contextual Info: MBRA210LT3G, NRVBA210LT3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low