581 TRANSISTOR Search Results

Contextual Info: Transistors IMD8A IMD9A 94S-902-AC144T (94S-904-AC114Y) 581

BFS17

Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

BFS17

Abstract: BFS17R BFS17W BFS17 E1
Contextual Info: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280

silicon npn planar rf transistor sot 143

Abstract: 556 national BFR92A BFR92AR BFR92A P2 Microelectronic sot 236 CB
Contextual Info: BFR92A/BFR92AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 1 13 581 13 581

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3

BFR93A application board

Abstract: Temic 3 x 7 597 telefunken diodes 914 Temic Semiconductors bfr93a BFR93A BFR93AR 682 MARKING SOT-23
Contextual Info: BFR93A/BFR93AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 1 13 581 13 581

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

"marking E1"

Abstract: BFS17 BFS17R BFS17W
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

"marking E1"

Abstract: BFS17R BFS17 d 1556 transistor
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1

NEC PS2581

Abstract: PS2581
Contextual Info: DATA SHEET PHOTOCOUPLER PS2581L1 ,PS2581 L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he P S 2 581 L1 , P S 2 581 L2 are o p tica lly co u p le d iso lato rs c o n ta in in g a G aA s light em ittin g d io d e and an NPN

NPN general purpose silicon transistors

Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
Contextual Info: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)

2N4239

Abstract: 2N4238 2N4237
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581 Devices Qualified Level 2N4237 2N4238 2N4239 JANTX JANTXV MAXIMUM RATINGS TA = 250C Unless Otherwise noted Ratings Symbol 2N4237 2N4238 2N4239 Units Collector-Emitter Voltage

2N4239

Abstract: 2N4237 2N4238
Contextual Info: TECHNICAL DATA NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581 Devices Qualified Level 2N4237 2N4238 JAN JANTX JANTXV 2N4239 MAXIMUM RATINGS TA = 250C Unless Otherwise noted Ratings Symbol 2N4237 2N4238 2N4239 Units Collector-Emitter Voltage

2N4338 substitution

Abstract: 2N4237 2N4238 2N4239 C-2688 MIL-PRF19500 2n4234 equivalent
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 10 December 1999. INCH-POUND MIL-PRF-19500/581A 10 September 1999 SUPERSEDING MIL-S-19500/581 23 April 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,

Nec b 616

Abstract: 2SK1581
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2 S K 1 581 N-CHAIMNEL MOS FET FOR SWITCHING

optocoupler a 3131

Abstract: optocoupler 3131 RM8 ferrite core 3131 optocoupler
Contextual Info: y [applica tio n ^ UNITRÜDE available | UCCI 581 UCC2581 UCC3581 Micropower Voltage Mode PWM FEATURES BLOCK DIAGRAM • Low 85 j.A Startup Current • Low 300|iA Operating Current • Automatically Disabled Startup Preregulator • Programmable Minimum Duty

NE213

Abstract: BC501 XC4010E scintillator PLCC84 package transistor BC501 A274 A292 PLCC84 XC4010XL
Contextual Info: NEUTRON SINGLE EVENT UPSETS IN SRAM-BASED FPGAs* Mattias Ohlsson Peter Dyreklev Karin Johansson Ericsson Saab Avionics AB Electromagnetic Technology Division 581 88 Linköping, Sweden and Peter Alfke Xilinx, Inc. 2100 Logic Drive, San Jose CA 95124, USA Abstract

Contextual Info: y UCCI 581 UCC2581 UCC3581 PRELIMINARY U N IT R O D E Micropower Voltage Mode PWM FEATURES Low 85nA Startup Current Low 300|iA Operating Current Automatically Disabled Startup Preregulator Programmable Minimum Duty Cycle with Cycle Skipping Programmable Maximum

Contextual Info: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document

Contextual Info: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document

smd code Hall

Abstract: HAL 579 magnetic sensor circuit diagram 579K HAL57x DSH000145 HAL573 HAL574 HAL575 HAL576
Contextual Info: Hardware Documentation D at a S h e e t HAL 573.HAL 576, 579 HAL 581.HAL 584 Two-Wire Hall-Effect Sensor Family Edition Dec. 22, 2008 DSH000145_003EN HAL57x, HAL58x DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document