580C Search Results

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

7813 Texas Instruments Transistor

Abstract: TMS320C6000 TMS320C6474 C6000 C6474 C64X DDR2-667 SPRS552H BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

transistor d880

Abstract: BR17
Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

6je6

Abstract: novar 200 6je6 tube
Contextual Info: 6JE6 Beam Power Tube NOVAR TYPE For C o lo r-T V H o riz o n t a l"D e fle c t io n Am pli f i e r A p p lic a tio n s GENERAL DATA E le c t r ic a l: Heater C h a r a c t e r is t i c s and R atin gs: V o ltag e AC o r DC .

RBS 6000 pin assignment serial cable

Abstract: sja2510 maxon EC-max SCR GATE DRIVER maxon dc motor 217-R LM 7804 K 9008 maxon modem maxon motor a max
Contextual Info: UM10316 LPC29xx User manual Rev. 01 — 22 May 2009 User manual Document information Info Content Keywords LPC2917/01; LPC2919/01; LPC2927; LPC2929; LPC2921; LPC2923; LPC2925; LPC2930; LPC2939 User Manual, ARM9, CAN, LIN, USB Abstract This document extends the LPC29xx data sheets with additional details to

IR power mosfet switching power supply

Abstract: trailing SCHEMATIC dimmer 568AF IR2136 application note RDA 8810 marking code SM texas ARMv5TE usermanual datasheet Po 9038 LPC2927 LPC2929
Contextual Info: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 01.01 — 14 July 2009 R R R LPC29xx User manual D D D UM10316 D FT FT A A R R D D D R A FT D R A Document information

Contextual Info: S M A E E S S H S P 5 2 1 5 Digital UpConverter August 1997 Features Description • Output Sample Rates Up to 52 MSPS; Input Data Rates Up to 13 MSPS The HSP50215 Digital UpConverter DUC is a QASK/FM modulator/FDM upconverter designed for high dynamic range applications such as cellular basestations. The DUC

Contextual Info: www.htr-india.com Alloy Resistance Wire, Wound On Fibre Glass Core/ Ceramic Core WIRE WOUND RESISTORS SILICONE COATED TYPE Mechanically Crimped, Tin Plated, PCB Type Termination HFP SERIES FIBRE GLASS SUBSTRATE Silicone Coated Wire Wound Resistors Plug in Style

2SK580

Abstract: 2SK579 2SK57 2SK58
Contextual Info: 2SK579 L ,2SK580£), 2SK579 ,2SK580(§) IJ J V N * + M O S FET SILICON N -C H A N N EL M O S FET HIGH S P E E D PO W ER SWITCHING 3F à I © Type L -J Type 2,4 r= 2i 1. Y - V : G ate 2. F l " i > ! D ra in 3. y 4. F w - Í X ! D ra in — X I S o u rc e

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

Contextual Info: Intel Atom Processor D2000 and N2000 Series Datasheet – Volume 2 of 2 Refer to Doc ID 326136-002 for Volume 1 of 2 December 2011 Revision 002 Document Number : 326137-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR

transistor D880 circuit diagram application

Abstract: GP-07 BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

CXD3412GA

Abstract: ICX412 171H smd diode h9 1117 m3 1544 1296C Ternary CAM CCD SMD
Contextual Info: CXD3412GA Timing Generator and Signal Processor for Frame Readout CCD Image Sensor Description The CXD3412GA is a timing generator and CCD signal processor IC for the ICX412 CCD image sensor. Features • Timing generator functions • Horizontal drive frequency 22.5MHz

Contextual Info: Alloy Resistance Wire, Wound On Fibre Glass Core/ Ceramic Core WIRE WOUND RESISTORS SILICONE COATED TYPE Mechanically Crimped, Tin Plated, PCB Type Termination HFP SERIES FIBRE GLASS SUBSTRATE Silicone Coated Wire Wound Resistors Plug in Style Flame Retardant

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

IRZ 46

Contextual Info: SGS-THOMSON Z i! R8D lS S l[LliSTl^©iBOi STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STB6NA 80 dss 800 V RDS(on) Id < 1 .9 Q 5 .7 A • ■ . . ■ . . . TYPICAL RDS(on) = 1-68 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

mb89371

Abstract: MB89371AH mb89371a Visitor counter a calculator LCD display china usb dvd player repair guide PG00-00072-3E MB91305PMC-G-BNDE1 MB90F378 mb89537a 565 MB90350E
Contextual Info: FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600, Fax: +1-408-737-5999 http://www.fma.fujitsu.com/

2e58

Abstract: BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

D880 TRANSISTOR

Abstract: A00C equivalent transistor A214 BR17
Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

D880 CIRCUIT DIAGRAM

Abstract: SYS13 BR17
Contextual Info: TMS320C6474 www.ti.com SPRS552E – OCTOBER 2008 – REVISED APRIL 2010 TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns

D880 voltage regulator

Abstract: SCR 2000 C6000 C6474 C64X DDR2-667 TMS320C6000 TMS320C6474 TRANSISTOR J 5804 EQUIVALENT SPRS552A
Contextual Info: TMS320C6474 Multicore Digital Signal Processor www.ti.com SPRS552A – OCTOBER 2008 – REVISED FEBRUARY 2009 1 Features • • • • • • • • • High-Performance Multicore DSP C6474 – 1-ns Instruction Cycle Time – 1.0-GHz Clock Rate – Eight 32-Bit Instructions/Cycle

d880 y

Abstract: transistor d880 SCR2000 SCR 2000 transistor A654 TMS320TCI6488 tms320tci6488cun TCI6487 TMS320TCI6487 ETB-2
Contextual Info: TMS320TCI6487 TMS320TCI6488 Communications Infrastructure Digital Signal Processor www.ti.com SPRS358H – APRIL 2007 – REVISED MAY 2009 • • • • • • • • • 1 High-Performance Communications Infrastructure DSP (TCI6487/8) – Instruction Cycle Time:

BR17

Contextual Info: TMS320C6474 SPRS552H – OCTOBER 2008 – REVISED APRIL 2011 www.ti.com TMS320C6474 Multicore Digital Signal Processor 1 Features 12 • Key Features – High-Performance Multicore DSP C6474 – Instruction Cycle Time: 0.83 ns (1.2-GHz Device); 1 ns (1-GHz Device); 1.18 ns