560 DPAK Search Results

560 DPAK Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK5R1P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK	Datasheet
TK6R9P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK	Datasheet

560 DPAK Price and Stock

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Samtec Inc


Samtec Inc HSEC8-156-01-3-DP-A-K Standard Card Edge Connectors 0.80 mm High-Speed Power/Signal Combo Edge Card Connector
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HSEC8-156-01-3-DP-A-K					1 $12.04 10 $11.12 100 $7.87 1000 $5.60 10000 $5.60	Get Quote
Samtec Inc HSEC8-156-01-L-DP-A-K Standard Card Edge Connectors 0.80 mm High-Speed Power/Signal Combo Edge Card Connector
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HSEC8-156-01-L-DP-A-K					1 - 10 - 100 - 1000 $4.96 10000 $3.63	Get Quote

560 DPAK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
04N50C3 Abstract: SPD04N50C3 Contextual Info: SPD04N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD04N50C3 P-TO252-3-1 Q67040-S4574 04N50C3 04N50C3 SPD04N50C3	PDF
02N50C3 Abstract: 02N50 02N5 SPD02N50C3 Q67040-S4570 Contextual Info: SPD02N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N50 02N5 SPD02N50C3 Q67040-S4570	PDF
smd diode marking UJ 76a Abstract: 08N50C3 TRANSISTOR SMD MARKING CODE 5c 08n50 SMD TRANSISTOR MARKING 4c d marking code dpak transistor PG-TO252-3-11 SPD08N50C3 V2608 TRANSISTOR SMD MARKING CODE 76a Contextual Info: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD08N50C3 O-252 PG-TO252 Q67040-S4569 08N50C3 PG-TO252-3-1, smd diode marking UJ 76a 08N50C3 TRANSISTOR SMD MARKING CODE 5c 08n50 SMD TRANSISTOR MARKING 4c d marking code dpak transistor PG-TO252-3-11 SPD08N50C3 V2608 TRANSISTOR SMD MARKING CODE 76a	PDF
08n50c3 Contextual Info: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD08N50C3 O-252 PG-TO252 Q67040-S4569 08N50C3 PG-TO252-3-1, 08n50c3	PDF
03n50c3 Abstract: 03n50c SPD03N50C3 03N50 200VW Contextual Info: SPD03N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD03N50C3 P-TO252-3-1 Q67040-S4571 03N50C3 03n50c3 03n50c SPD03N50C3 03N50 200VW	PDF
08n50 Abstract: 08n50c3 Contextual Info: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD08N50C3 O-252 PG-TO252 SPD08N50C3 Q67040-S4569 08N50C3 08n50 08n50c3	PDF
03n50c3 Abstract: SPD03N50C3 03n50c Contextual Info: SPD03N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD03N50C3 P-TO252-3-1 Q67040-S4571 03N50C3 03n50c3 SPD03N50C3 03n50c	PDF
02N50C3 Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490 Contextual Info: SPD02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490	PDF
04n50c3 Abstract: SPD04N50C3 Q67040-S4574 04N50 Contextual Info: SPD04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD04N50C3 P-TO252-3-1 Q67040-S4574 04N50C3 04n50c3 SPD04N50C3 Q67040-S4574 04N50	PDF
08n50 Abstract: SPD08N50C3 Contextual Info: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252-3-1 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD08N50C3 O-252 PG-TO252-3-1 SPD08N50C3 08N50C3 PG-TO252-3-1 Q67040-S4569 08n50	PDF
08N50C3 Abstract: SPD08N50C3 Contextual Info: SPD08N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPD08N50C3 O-252 P-TO252-3-1 Q67040-S4569 08N50C3 08N50C3 SPD08N50C3	PDF
dpak code Abstract: marking CODE MX CJD86 MJD86 MJD86R MJD86S transistor marking mx marking code XY Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CJD86 DPAK TO-252 Plastic Package For High Speed Switching Application ABSOLUTE MAXIMUM RATINGS (Tc=25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage	Original	CJD86 O-252) 250mm C-120 CJD86Rev100605E dpak code marking CODE MX CJD86 MJD86 MJD86R MJD86S transistor marking mx marking code XY	PDF
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CJD86 DPAK TO-252 Plastic Package For High Speed Switching Application ABSOLUTE MAXIMUM RATINGS (Tc=25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage	Original	CJD86 O-252) 250mm C-120 CJD86Rev100605E	PDF
PDTC Abstract: CSB1182 MJD112 MJD117 MJD13003 MJD148 MJD31 MJD31C CSA1834 MJD350 Contextual Info: Continental Device India Limited CDIL C-120 Naraina Industrial Area, New Delhi - 110 028, India. Phone : (+91-11) 2579 6150* Fax : (91-11) 25795290, 51411119 E-mail : email@cdil.com Website: www.cdilsemi.com TO-252 (DPAK) PACKAGE DEVICES Maximum Ratings	Original	C-120 O-252 MJD340 MJD47 MJD50 MJD13003 CSD2118 2SB1184) 2SD1760) PDTC CSB1182 MJD112 MJD117 MJD13003 MJD148 MJD31 MJD31C CSA1834 MJD350	PDF

CSB1516 Abstract: MJD31 MJD112 MJD117 MJD13003 MJD148 MJD31C MJD340 MJD350 MJD47 Contextual Info: Continental Device India Limited C-120 Naraina Industrial Area, New Delhi - 110 028, India. Phone : +91-11- 2579 6150, 5141 1112 Fax : +91-11- 2579 5290, 5141 1119 e-mail : email@cdil.com web: www.cdilsemi.com TO-252 DPAK PACKAGE DEVICES Electrical Characteristics (Ta=25ºC, unless specified otherwise; PD at Tc=25ºC)	Original	C-120 O-252 MJD340 MJD47 MJD50 2SB1184) 2SD1760) CSB1516 MJD31 MJD112 MJD117 MJD13003 MJD148 MJD31C MJD340 MJD350 MJD47	PDF
d2nk7 Abstract: d2nk marking v2 MOROCCO DPAK Contextual Info: STD2NK70Z - STD2NK70Z-1 N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STD2NK70Z STD2NK70Z-1 700 V 700 V 7.2 Ω 7.2 Ω 1.6 A 1.6 A 45 W 45 W • ■ ■ ■	Original	STD2NK70Z STD2NK70Z-1 d2nk7 d2nk marking v2 MOROCCO DPAK	PDF
d2nk7 Abstract: STD2NK70Z STD2NK70Z-1 STD2NK70ZT4 Contextual Info: STD2NK70Z - STD2NK70Z-1 N-CHANNEL 700 V - 6 Ω - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STD2NK70Z STD2NK70Z-1 700 V 700 V 7Ω 7Ω 1.6 A 1.6 A 45 W 45 W • ■ ■ ■ ■	Original	STD2NK70Z STD2NK70Z-1 STD2NK70Z d2nk7 STD2NK70Z-1 STD2NK70ZT4	PDF
CJD83 Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON POWER TRANSISTOR CJD83 DPAK TO-252 Plastic Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage VALUE 60 UNITS V Collector Emitter Voltage	Original	CJD83 O-252) C-120 CJD83Rev111004E CJD83	PDF
TSD1760 Abstract: transistor a09 4 npn transistor ic AS 205 transistor TO252 transistor 18BSC TSB1184CP TSD1760CP Contextual Info: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP	Original	TSD1760 O-252 200mA TSB1184CP TSD1760CP TSD1760 transistor a09 4 npn transistor ic AS 205 transistor TO252 transistor 18BSC TSB1184CP	PDF
transistor A08 Abstract: A08 transistor TO252 18BSC TSB1184A TSB1184ACP Contextual Info: TSB1184A Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics	Original	TSB1184A O-252 -100mA TSB1184ACP transistor A08 A08 transistor TO252 18BSC TSB1184A	PDF
TSB1184 Abstract: TO252 18BSC TSB1184CP pnp transistor d 640 transistor B 540 Contextual Info: TSB1184 Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics	Original	TSB1184 O-252 -100mA TSB1184CP TSB1184 TO252 18BSC pnp transistor d 640 transistor B 540	PDF
18BSC Abstract: TSB1412 TSD2118 TSD2118CP Contextual Info: TSD2118 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 20V IC 5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = 4A / 100mA (Typ.) Complementary part with TSB1412	Original	TSD2118 O-252 100mA TSB1412 TSD2118CP 18BSC TSB1412 TSD2118	PDF
Contextual Info: TSB1184 Low Vcesat PNP Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Excellent DC current gain characteristics	Original	TSB1184 O-252 -100mA TSB1184CP	PDF
Contextual Info: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP	Original	TSD1760 O-252 200mA TSB1184CP TSD1760CP	PDF

560 DPAK Search Results

560 DPAK Result Highlights (2)

560 DPAK Price and Stock

Samtec Inc HSEC8-156-01-3-DP-A-K

Samtec Inc HSEC8-156-01-L-DP-A-K

560 DPAK Datasheets Context Search

04N50C3

02N50C3

smd diode marking UJ 76a

08n50c3

03n50c3

08n50

03n50c3

02N50C3

04n50c3

08n50

08N50C3

dpak code

PDTC

CSB1516

d2nk7

d2nk7

CJD83

TSD1760

transistor A08

TSB1184

18BSC