55QMB Search Results

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

7c251

Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Contextual Info: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed

Contextual Info: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­

Contextual Info: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)

Contextual Info: CY7G287 CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding >2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tCo = IS ns

7C251

Abstract: C2515 SMD DIODE A13 C251-5 CY7C251-45WC CY7C251 CY7C254 01d smd code smd diode code A1s 5962-895370
Contextual Info: CY7C251 CY7C254 y CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251) — Less than 165 mW when deselected

CY27H010-45PC

Abstract: CY27H010-55Wmb 27H010 CY27H010
Contextual Info: CY27H010 « r CYPRESS Features 128K X8 High-Speed CMOS EPROM F unctional D escription • CMOS for optimum speed/power • High speed — t^A — 25 ns max. commercial — *aa — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

46E SMD CODE

Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
Contextual Info: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power

Contextual Info: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

Contextual Info: CY7C286 CY7C287 CYPRESS 65,536 x 8 Reprogrammable SEMICONDUCTOR Asynchronous/Registered PROMs Features Functional Description The CY7C286 and the CY7C287 are high-perfbrmance 65,536 by 8-bit CMOS PROMs. The CY7C286 is configured in the JEDEC-standard S12K EPROM pin­

Contextual Info: V CYPRESS Features 32K X8 High-Speed CMOS EPROM Functional Description rapid transition to and from three-stated outputs. The CY27H256 is a high-perform ance, 256K CM OS E P R O M organized in 32 Kbytes. It is available in industry-standard 28-pin, 600-mil DIP, 32-pin LCC and

Contextual Info: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)

LC 7258

Abstract: 333Q CY7C287 32fl diode A14A
Contextual Info: CY7C287 * CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding > 2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tc o = 15 ns

C2877

Abstract: c2874 7C28 c2872 C2879 CY7C287 7C287-65 CY7C287-55WMB
Contextual Info: 1CY 7C28 7 CY7C287 64K x 8 Reprogrammable Registered PROM Features put enable that can be programmed to be synchronous ES or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 ns and the time from clock HIGH to output valid is 15 ns.

7C271

Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
Contextual Info: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

LC 7258

Abstract: C-274
Contextual Info: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)

3Cs 6 PIN SMD CHIP

Abstract: AFL smd code CY7C251 CY7C251-45PC Programming SMD code l32 u1p smd 7C251 CY7C254 W2265
Contextual Info: -c PRESS MbE D SEMICONDUCTOR • ^ 2 5 0 = ^ 2 0QGb7b7 1 , - if CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed Tor reprogrammability • Highspeed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251)

7C261

Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
Contextual Info: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power

Contextual Info: CY7C243 CY7C244 Er - g 3 CYPRESS Features 4K X 8 Reprogrammable PROM • Capable o f withstanding greater than 2001V static discharge • CMOS for optimum speed/power • TTL-compatible I/O • Windowed for reprogrammability • Direct replacement for bipolar

Contextual Info: /U£ho. vveune*uay, iviay 11, i«*h Revision: August 19,1994 CY7C243 CY7C244 :# C Y PR ESS 4K x 8 Reprogrammable PROM • Capable of withstanding greater than 2001V static discharge Features • CMOS for optimum speed/power The CY7C243 and CY7C244 are plug-in

CY7C263

Abstract: 7C264 7C261 C261 CY7C261 CY7C264 CY7C263-45WC CY7C264-55 cy7c261-45wmb CY7C264-45WMB
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • Capable of withstanding greater than 2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)

Contextual Info: CY7C277 CY7C279 CYPRESS SEMICONDUCTOR Features Reprogrammable 32K x 8 Registered PROM Programmable address latch enable input Programmable synchronous or asynchronous output enable 7C277 On-chip edge-triggered output registers (7C277) Optional registered/latched address

Contextual Info: CY7C271 CY7C274 CYPRESS • - = •— SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power