547 MOSFET Search Results

547 MOSFET

Abstract: AN-547-1 most 450
Contextual Info: AN 547: Putting the MAX II CPLD in Hibernation Mode to Achieve Zero Standby Current January 2009 AN-547-1.0 Introduction To save power, the MAX II CPLD can be completely powered down into hibernation mode during an inactive period. The CPLD can power down automatically, and allow

547 MOSFET

Abstract: IRFM150 SHD218502 SHD218502A SHD218502B
Contextual Info: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .055 Ohm, 38A MOSFET • Isolated Hermetic Metal Package • Fast Switching

547 MOSFET

Contextual Info: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .055 Ohm, 38A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on

IRFM150 equivalent

Abstract: shd2182
Contextual Info: SHD218502 SHD218502A SHD218502B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 547, REV. Formerly Part Number SHD2182/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .055 Ohm, 38A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on

P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Contextual Info: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385

CA5470H

Contextual Info: HARRIS SEMICOND 4302571 4 0 E T> SECTOR fSl H A R R I S OOBlflâfl 1 IHAS CA5470 Quad Microprocessor BiMOS-E Operational Amplifiers With MOSFET Input/Bipolar Output August 1991 Features Description • High-Speed CMOS Input Stage Provides The C A 547 0 series are integrated circuit operational

transistor mosfet bf964s

Abstract: BF964S z8088
Contextual Info: 7110ÔSb D0b753M 547 IPHIN B F964S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for VHF applications in television tuners. The device is also suitable for use in professional

N914

Abstract: 1N414 diode DG508ACJ
Contextual Info: SILICONIX 33E D INC • Ô 2 547 35 0 D l b 5 5 B 4 « S I X OTSS& rrs i- 12. DG508A/509A 8-Channel/Dual 4-Channel CMOS Analog Multiplexers FEATURES BENEFITS • TTL & CMOS Direct Control Over Military Temperature Range • Easily Interfaced • Communication Systems

sss5N90

Abstract: IRFS9Z34
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Continued B V dss (V) lo(on)(A) SSS3N 70 SSS4N 70 SSS5N 70 700 1.80 2.30 2.70 5.000 3.500 2.500 SSS3N 80 SSS4N 80 SSS5N 80 800 1.80 2.30 2.70 SSS2N 90 SSS3N 90 SSS4N 90 SSS5N 90 900 1.80 2.00 2.50 2.80

IRFD9120

Abstract: FD9120 MOSFET IRFd9120 ON950 IF-D91
Contextual Info: T em ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary Part Number V BR I)SS (V) n>S(on| (ß> IRFD9120 -100 0.60 -1 .0 IRFD9123 -6 0 0.80 -0 .8 vi I d (A) S p 4-Pin DIP D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

547 MOSFET

Abstract: *c1251c
Contextual Info: SSP1N50A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss ” 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 jjA Max. @ VOS= 500V

SSW60N06

Abstract: 50V 60A MOSFET SSW60N05 250M SSI60N05 SSI60N06
Contextual Info: SSW60N06/05 SSI60N06/05 N-CHANNEL POWER MOSFETS FEATURES D2-PAK • Lower R os<on • Improved Inductive Ruggedness ■ Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

SSS50N06

Abstract: AGSA 50 250M SSS50N05
Contextual Info: N-CHANNEL POWER MOSFETS SSS50N06/05 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A •800V : »VDSS . • ro s ON (MAX) ■0.70Q • I d . . 1 4 A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

Contextual Info: ICE30N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 30A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10ASJ-2 HIGH-SPEED SWITCHING USE FS10ASJ-02 • 4V DRIVE • V D S S . 100V • rDS ON (MAX) .0.190 • I d . 1 0A

1rfd9120

Abstract: IRFD9120 00LQ
Contextual Info: International k ?r Rectifier PD-9.3311 IRFD 9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching V DSS= -1 0 0 V ^DS on =

Contextual Info: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance

Contextual Info: ICE35N60W Product Summary N-Channel Enhancement Mode MOSFET TA = 25°C 35A Max V BR DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

Contextual Info: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V

PHILIPS dual gate mosfets

Abstract: ecg mosfet ecg fet ecg jfet ecg463 ecg2383 Depletion
Contextual Info: PHILIPS E C G INC SME J> M bbSa^fi DD071b7 bGO « E C G Power MOSFETS ECG Type Description and Application ECG2392 M O S FET , N-Ch, ▲ Enhancement H i Speed S w itch Drain to Gate to Continuous Transcon­ Source Drain Source Breakdown Breakdown Current ductance

AN7254

Abstract: rca 549 RFP25N05L AN-7254 AN7260 rca application notes
Contextual Info: Logic-Level Power MOSFETs RFP25N05L File Number 2270 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 25 A, 50 V Tdsloni —0.047 Cl Features: • Design optimized for 5 volt gate drive m Can be driven directly from Q-MOS, N-MOS, TTL Circuits

Contextual Info: ICE47N65W Product Summary ID N-Channel Enhancement Mode MOSFET 47A Max V BR DSS ID = 1mA 650V Min rDS(ON) VGS = 10V 0.063Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability

IRL3705NS

Abstract: IRL3705NL
Contextual Info: PD - 9.1502B International IG R Rectifier IRL3705NS/L HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3705NS Low-profile through-hole (IRL3705NL) 175°C Operating Temperature Fast Switching