IRFS9530
Abstract: IRFS9531
Contextual Info: P-CHANNEL POWER MOSFETS IRFS9530/9531 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
|
OCR Scan
|
irfs9530/9531irfs9530-100virfs9531+2o-220fgg2r10s
|
PDF
|
IRFS9620
Abstract: IRFS9522 SSS6N60 IRFS820
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00
|
OCR Scan
|
o-220irfs823irfs821irfs833+9irfs831irfs843irfs841irfs822irfs820irfs832irfs9620irfs9522sss6n60
|
PDF
|
sss5N90
Abstract: IRFS9Z34
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Continued B V dss (V) lo(on)(A) SSS3N 70 SSS4N 70 SSS5N 70 700 1.80 2.30 2.70 5.000 3.500 2.500 SSS3N 80 SSS4N 80 SSS5N 80 800 1.80 2.30 2.70 SSS2N 90 SSS3N 90 SSS4N 90 SSS5N 90 900 1.80 2.00 2.50 2.80
|
OCR Scan
|
o-220irfs9z30irfs9531irfs9541+6irfs9z34irfs9530irfs9540irfs9631irfs9641sss5n90
|
PDF
|
1RFS9630
Abstract: IRFS9140 IRFS9630 1RFS840 IRFS841 IRFS842 IRFS9130 IRFS9131 IRFS9132 IRFS9133
Contextual Info: 306 - - T a = 2 5 cC f m % tt Vd s or £ Vg s Id Pd 'S Ig s s * /CH * /CH ÍA) (W) Vg s (V) 14 % tos(on) Vd s = (Ta=25°C) I d (o o ) g fs Ciss Coss Crss (V) (nA) (V) ( M A) Vd s (V) min max (V) (V) (nax) Id l.mA) ft B m % V g s =0 Vg s Vd g )/ V g s Cth)
|
OCR Scan
|
1rfs840o-220irfs841irfs842+101rfs843irfs9130irfs9131o-247irfs92431rfs9630irfs9140irfs9630irfs9132irfs9133
|
PDF
|
