IRFS9620
Abstract: IRFS9522 SSS6N60 IRFS820
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00
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o-220irfs823irfs821irfs833+9irfs831irfs843irfs841irfs822irfs820irfs832irfs9620irfs9522sss6n60
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SSS60N
Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00
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o-220irfsz20sss15n05irfsz30+15irfsz40sss50n05sss60n05irfsz24sss15n06irfsz34sss60nsss6n60sss50n061rfs644irfs540irfs541sss7n60irfs630rfs830
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std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158std2n52stp2na60buz102 equivalentssh6n80rfp60n06replacement for irl2203nbuz91 equivalentrfp60n06leirfp460 cross referencebuz91a equivalent
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IRFS830
Abstract: IRFS831 IRFS832 IRFS833 rectifier 832
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^1,4142 0G173Ô4 Tñ3 ■ SMGK N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance
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71b4m20g173a4irfs830/831/832/833irfs830+6irfs831irfs832irfs833vos-400vt-253crectifier 832
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DIODE S4 45a
Abstract: IRFS830 250M C055 IRFS831
Contextual Info: N-CHANNEL POWER MOSFETS IRFS830/831 FEATURES • Lower R ds ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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irfs830/831irfs830irfs831o-220+4002a321diode s4 45a250mc055
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2n39042n39062n44012n4403+162n50872n50882n55512n6515ksp06ksp10irf9210darlington npn 600v 8a transistorfet 10a 600vdarlington npn 600v 12a transistortransistor irf9640n-ch power mosfet to-92600v 12a to220fnpn transistor 600v 5a to-220transistor irf620ksh117-1
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FS830
Contextual Info: N-CHANNEL POWER MOSFETS IRFS830/831/832/833 FEATURES • L ow e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability
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irfs830/831/832/833fs830 |
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SSH6N80
Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158ssh6n80irf640 equivalentbuz100 equivalentste38na50irf540 equivalentstp2na60buz10 equivalentbuk444 equivalent2sk2700 equivalentbuz71 equivalent
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