5458 TRANSISTOR Search Results

5458

Abstract: TA 5458 fairchild 2n5458
Contextual Info: G G S S TO-92 SOT-23 D D Mark: 6D / 61S / 6L NOTE: Source & Drain are interchangeable N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

5459

Contextual Info: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

2n5457

Abstract: 5457 MARK 61S
Contextual Info: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

5458 transistor

Abstract: transistor 5457 transistor 2N5457 2N5457 5458 transistor 2N5458 transistor mark igf 2N5458 2N5459 MMBF5457
Contextual Info: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

transistor 5457

Abstract: transistor 2N5457 5458 transistor 2N5457 TA 5458 5458 2N5458 2N5459 common drain 2N5459 MMBF5457
Contextual Info: G S G S TO-92 SOT-23 D D NOTE: Source & Drain are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from

BF244B

Contextual Info: F6 9 -9 7 Small Outline Surface Mount Package Devices N-CHANNEL SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS BVgss Device Type VgS(OFF) Igss Min • dss Conditions Limits Max @ V gs Min Max V DS to Min Max @ V ds (nA) (V) (V) (V) (V) (nA) (mA) (mA) (V)

2N4221 motorola

Abstract: MPF102 switch application mpf102 fet FET 2N5459 MFE131 BF245C FET 5457 2N4220 MOTOROLA 2N5459 MOTOROLA 2N3993
Contextual Info: Transistors Field effect transistors Motorola offers a line of field-effect transistors that encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety of junction FETs and MOSFETs, with N- or P-channel polarity with both single and dual gates. These FETs include devices developed for operation

2N5459 MOTOROLA

Abstract: Motorola 2N5459 2n5459 2N5457 MOTOROLA 2N545 2N5457
Contextual Info: 2N5457 thru 2N5459* CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e Vd S 25 Vdc D ra in -G a te V o lta g e Vd G 25 V dc R e verse G a te -S o u rc e V o lta g e V g SR -2 5 V dc G a te C u rre n t 1g 10 m Adc T o ta l D e vice D is s ip a tio n (u T ^ = 25CC

2n 5459

Abstract: 2N5457
Contextual Info: MOTOROLA SC 15E D § b3b7254 OGflbbMb 1 | XSTRS/R F 2N5457 thru 2N5459 * CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S S ym bol V a lu e U n it D ra in-S ource V o ltag e Vos 25 Vdc D ra in-G ate V o ltag e Vq g 25 V dc Vg s r -2 5 V dc R a ting

2N5458

Abstract: 2N5457
Contextual Info: 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com

2n5458

Abstract: 2N5457 application note 2N5457 2N5638 2N5639
Contextual Info: 2N5457, 2N5458 2N5457 and 2N5458 are Preferred Devices JFETs - General Purpose N–Channel – Depletion N–Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com

2n5457 pin out

Abstract: 2N5457 2N5458 2N5457 datasheet 2N5458 equivalent TA 5458 semiconductor 2n5457
Contextual Info: 2N5457, 2N5458 Preferred Device JFETs − General Purpose N- Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode Type A designed for audio and switching applications. • • • • • • • http://onsemi.com N-Channel for Higher Gain

mosfet 4953

Abstract: mosfet catalog
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision Tabie of Contents General Inform ation . . 3 Index by Part Num ber . 4-9 MIL-PRF-19500 Qualified Products L is t.

Contextual Info: 5 2 3 3 /3 8 , 5 4 5 8 / 63 / 74 , 5604 , 2-FUNCTION 4-DIGIT VF AUTOMOTIVE CLOCKS SC L5604E <01 LAMP S2 Q" S1 771 NU [~£ 3Ì~| NU S3 [j" IGNtTKX [1_ I t] C1 0? NU Tn 62 f2 34~| 02 a2 j* Tri c2 t>2 ¿T] g3 t 1 TESI (To Til e3 COLON [TT Til c3 t) [tT ¿U îl_] e*

h770

Abstract: H773
Contextual Info: MwT-H7 28 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

SOLAR TRANSISTOR

Abstract: H773
Contextual Info: MwT-H7 32 GHz Medium Power/ High Gain AlGaAs/InGaAs PHEMT DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns FEATURES 50 50 • 21.5 dBm POWER OUTPUT AT 12 GHz • EXCELLENT FOR HIGH GAIN AND MEDIUM POWER APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

a1154 transistor

Abstract: A1154 2SA1154 Aiwa 2SA1154-T 1S955 2SC2721 5458 transistor
Contextual Info: , NEC lir /\T 7 Silicon Transistor A 2SC2721 + npnx m m v u> h <* u s ftiM ffi & * ¡ m x > r >y ^ i i f f l N P N S ilic on E p ita xial T r a n s i s t o r H ig h F r e q u e n c y A m p l i f i e r , M e d i u m S p e e d S w i t c h i n g In dustrial U s e

2N5458 equivalent

Abstract: 2N4303 mpf105 equivalent 2N4302 mpf103 2N5457 equivalent MPF102 equivalent transistor 2N4303 equivalent equivalent 2N5459 2N4304 equivalent
Contextual Info: Sem iconductors M icro-Electronics F.E.T.'s/P.U.T.'s/Light Detectors General Purpose Junction F.E.T.s REFERENCE T A B L E Code Min. B V qss Volts MEF101 MEF102 MEF103 MEF104 2N4302 2N4303 2N4304. 30 40 40 50 30 30 30 Volts Max. C 1S1 pF Max. 1kHz NF dB 10

transistor 431t

Abstract: transistor AS 431 431T 431 transistor TRANSISTOR 431 a 431 transistor n 431 transistor k a 431 transistor transistor 431 c 431T-5
Contextual Info: TELEDYNE RELAYS SERIES 431 ESTABLISHED RELIABILITY TO-5 RELAY SENSITIVE SPDT Actual Size SERIES DESIGNATION RELAY TYPE 431 SPDT basic relay 431D SPDT relay with internal diode for coil suppression 431DD SPDT relay with internal diodes for coil transient suppression and polarity

432T-5

Abstract: 432T ER432M DPDT transistor ER432M4-26A 12 Volt DPDT Relay 432D 432D RELAY 9 Volt DPDT Relay 432T-18
Contextual Info: TELEDYNE RELAYS SERIES 432 ESTABLISHED RELIABILITY TO-5 RELAY SENSITIVE DPDT Actual Size SERIES DESIGNATION RELAY TYPE 432 DPDT basic relay 432D DPDT relay with internal diode for coil transient suppression 432DD DPDT relay with internal diodes for coil transient suppression and polarity

pj211

Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
Contextual Info: INT ER F E T CORP 2bE D • 4fl2bflflä 0 0 0 0 2 3 6 T ■ C1 T '- Z Z - Z S ' -r~3s-~?.5 N Channel JFETs _ SMALL OUTLINE N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Electrical Characteristics at TA = 25°C VGSlo»i V Bfl|GSS less Ui lG

transistors BC 543

Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
Contextual Info: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120

P290E

Abstract: OP290 pmi op290
Contextual Info: PMÌ OP-290 PRECISION LOW-POWER MICROPOWER DUAL OPERATIONAL AMPLIFIER isiiin M o n o l i t h i c ^ FEA TU R ES • Single/Dual Supply Operation. +1.6V to +36V .±0.8V to ±18V • True Single-Supply Operation; Input and Output Voltage