5424D Search Results

PF10J

Contextual Info: O K I SEMI CONDUCTOR GROUP 23E D b?5424D DGOaom 4 »1.55/im Edge-Emitting LED DIP. Module aOE552G • DESCRIPTION OKI OE552G is a 1.55/im edge-emitting LED DIP module with single mode fiber pigtail. Using the OKI EE-LED which featufes high coupling efficiency, single mode fiber output over 8^/W

DS12

Contextual Info: O K I Semiconductor MSC23436 A-xxBS 12 /DS 12 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 16-Mb DRAMs 4M x 4 in SOJ packages

OLD125

Abstract: 2m240
Contextual Info: O K I electronic components OLP125 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD125 is a high-output G aA s infrared light em ission m indiode sealed with a transparent epoxy resin in a ceramic case. Its light em ission w ave is peaks at 940 nm. Because of its sharp

SOJ28-P-300-1

Abstract: MSM51V16800B MSM51V16800BSL
Contextual Info: O K I Semiconductor MSM5 1V16800B/BSL E2G0074-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V16800B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B /B SL achieves high integration, high-speed operation, and

v17805

Abstract: MSM51V17805BSL msm51v17805b
Contextual Info: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805B /B SL achieves high integration, high-speed operation, and

Contextual Info: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: O K I Semiconductor MSM5 1 17800B_ E 2 G 0043 - 17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800B achieves high integration, high-speed operation, and low-power

Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C

Contextual Info: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805B /B SL achieves high integration, high-speed operation, and

MSM51V16805B

Abstract: MSM51V16805BSL
Contextual Info: O K I Semiconductor MSM5 1V16805B/BSL_ E2G0077-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V16805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16805B /B SL achieves high integration, high-speed operation, and

MSM5265GS-BK

Abstract: MSM5265GS-K 6 pin 2D 1002 MSM5265GS "LCD Drivers" 12 pin 7 segment display pin configuration oki lcd driver MSM5265 QFP100-P-1420-BK QFP100-P-1420-K
Contextual Info: O K I Semiconductor MSM5265 8O-DOT LCD DRIVER GENERAL DESCRIPTION The M SM 5265 is an LC D driver w hich can directly drive up to 80 segm ents in the static display mode, w hile 160 segm ents in the 1 / 2 duty dynam ic display mode. The M SM 5265 is fabricated w ith low pow er C M O S m etal gate technology, consisting of a 160stage shift register, 160-bit data latch, 80 sets of LC D drivers and a com m on signal generator.

414256-10

Abstract: 414256 MSM414256-10 MSM414256-12 MSM414256-12RS
Contextual Info: O K I S E M I C O N D U C T O R GR O U P ôi OKI » Ë J b 7 E M S M 0 OODSSbt, 5 | ~ ¿.6724240 O K I S E M I C O N D U C T O R G R O U P semiconductor 89D 02566 MSM414256RS 262,144-WORD X ~J7 D 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM414256RS is a new generation dynamic RAM organized as 262,144 words by 4 bits.

MSM41256A

Abstract: MSM6310 256KDRAM oki motor control
Contextual Info: O K I Semiconductor MSM6310 PCM RECORDING & PLAYBACK LSI GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback LSI w hich is m anufactured using O ki's low p ow er CMOS silicon gate technology. The MSM6310 is designed for the purp o se of endless loop recording by 8-bit PCM.

FST 460 transistor

Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
Contextual Info: O K I Semiconductor ISM6258/MSM6258V ADPCM S P E E C H P R O C E S S O R FO R SO LID ST A T E R E C O R D E R TO C U S T O M ER S FO R NEW C IR C U IT DESIGN For a new circuit design, it is recommended to use not the M SM 6258, but the M SM 6388/ M SM 6588 as described later.

Contextual Info: O K I electronic components OC340 PHOTO COUPLER GENERAL DESCRIPTION The DC340 is a photo coupler formed by combining a GaAs infrared light emitting diode and a phototransistor. Encased in a 6-pin plastic package, the OC34CI is suitable for such applications as an

Contextual Info: O K I S e m iœ n d u c to r M S M 64 1 6 2 /M S M 6 4 1 6 2 D 4 -B it Single-Chip M icrocontroller DESCRIPTION The M SM 64162/M SM 64162D are high-perform ance CMOS 4-bit, single-chip m icrocontrollers which h av e b u ilt-in 128-n ib b le RA M , 16 I / O 's , b u z z e r o u tp u t, an d 2 4 LC D s e g m e n t d riv e rs . The

Contextual Info: E2G0106-18-42 O K I Semiconductor This,eision:Apr1998 MSM511 6 4 0 0 C_ 4,194,304-Word x 4-Bit D YNAM IC R AM : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

CT 1975 - sam

Abstract: CT 1975 sam MSM6373-329 MSM6374-007 TB 2929 Ho PM641
Contextual Info: O K I Semiconductor MSM6375/4/3/2-XXX 1 M-bit/512K-bit/256K-bit/128K-bit M ASK ROM S P E E C H SY N T H ESIZ ER G E N E R A L D ESCRIPTIO N The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech pro­ cessor circuit in conjunction with a built-in

S82V16520

Abstract: 533 BA MS82V16520 QFP100-P-1420-0 AX2002 S82V
Contextual Info: E2L0056-28-91 % This version: Sep. 1998 O K I Semiconductor M S82V16 5 2 0 2 62 ,14 4 -W o rd x 3 2 -B it x 2 -B a n k Synchronous G raphics R AM D E S C R IP TIO N The MS82V16520 is a synchronous graphics random access m em ory organized as 256 K w o r d s x 3 2

photo sensor pin diagram

Abstract: OIP101 SCHMIT TRIGGER
Contextual Info: O K I electronic components OIP1Q1_ Open Collector Output Photodetector GENERAL DESCRIPTION The OIPlOl is an open collector output photodetector that incorporates a photodiode, amplifier circuit, Schmitt-trigger circuit and a voltage regurator circuit on to a single chip.

Contextual Info: E2U0044-16-X2 O K I Semiconductor M S M 7 7 0 8 - 0 2 _ Serial Register Interface ADPCM CODEC for Telephone Recording GENERAL DESCRIPTION The MSM7708-02 is a CMOS IC developed for applying to PHS Personal H andyphone System .

Contextual Info: O K I Semiconductor MSM5 1V4 10O/SL 4,194,304-Word x 1-Bit D Y N A M IC RAM DESCRIPTION The MSM 51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate

TfiS SEMICONDUCTOR GROUP

Abstract: MSM514400 MSM514400-10 S4240 24B4G
Contextual Info: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.

OLD2202

Abstract: 1000 nm light emitting diode 910nm 5424D
Contextual Info: O K I electronic components OLP22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheOLD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most