B75424Q Search Results

Contextual Info: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

TRANSISTOR AH-10

Abstract: MSM511002A-70
Contextual Info: 5ÔE D • b?242MÜ D0127fl3 113 H O K I J O K I O K I M S M s e m SEMI CONDUCTOR ic o n d u c t o r ÊROUP ~ T * ' ~ U - 2 3 - i 5 ' 5 1 1 0 0 2 A _ 1,048,576-WORD X 1-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511002A is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The

IVD12

Abstract: PABX current rating MSA4709 IVD10 4w-2w hybrid transister IV-D-20 900J2 DQG7512 FREE transisters
Contextual Info: O K I SEMICONDUCTOR GROUP 23E D • O K I semiconductor MSA4709_ b7 2 4 2 4 0 0007512 _ ' ~r-7s-n-n SUBSCRIBER LINE IN TERFACE CIRCUIT G EN ER A L DESCRIPTION The MSA4709 is designed to provide BSH functions and to meet PABX transmission performance

M50 .0022

Abstract: MSM5116400
Contextual Info: O K I Semiconductor MSC23841-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode D ESC R IP TIO N The OKI M SC 23841-xxBS20/D S20 is a fully decoded 8,388,608-word x 40-bit CM OS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs in SOJ M SM5116400 packages mounted

D08-15

Contextual Info: Preliminary OKI Semiconductor MSM5 4 3 2 1 2 8 _ 131,072 -Word x 32 Bit DYNAMIC RAM : HYPER PAGE MODE TYPE DESCRIPTION The MSM5432128 is a new generation Graphic DRAM organized in 131,072-word by 32-bit configuration. The technology used to fabricate the MSM5432128 is OKI's CMOS silicon gate process technology.

HA 16630

Abstract: 910nm Infrared Emitting Diode OLD224 INFRARED EMITTING DIODE TO18 1000 nm light emitting diode
Contextual Info: O K I electronic OLD224 components GaAlAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAl As infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-18 case. Its light em ission w ave length is peaks at 910 nm. Because of its high

Contextual Info: O K I Semiconductor MSM27C221ZB 262,144-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C221ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C221ZB operates on a single 5 V power supply and is TTL compatible. Since the

TfiS SEMICONDUCTOR GROUP

Abstract: MSM514400 MSM514400-10 S4240 24B4G
Contextual Info: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.

U2765

Abstract: 1750 Hz TONE fsk modem ic design HF modem DTMF MSM6888BGS-VK MSM6888BRS AM receiver 28 dip
Contextual Info: OKI Semiconductor MSM6888B_ Multi-Function Telecommunication LSI G EN ER A L D ES C R IPTIO N The M SM 6888B provides three kinds of functions w h ich are often applied for telephone term inal equipm ent. Those are D T M F generator, D T M F receiver and lo w speed 300 bps F S K m odem defined as V.21

LF400

Contextual Info: O K I electronic components OL395N-20/20P, OL395N-40/20P, OL395N-60/20P, OL395N-80/20P, 0L395N-100/20P_ 1.3 |im High-Power Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL395N-20/ 20P, ÜL395N-40/20P, OL395N-60/20P, OL395N-80/20P, OL395N-100/20P are

Contextual Info: O K I S em iconductor MSC23B27A-XXBS2/PS2 262,144-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23B27A-xxBS2/DS2 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory Module composed of two 4-Mb DRAMs 256K x 16 in SOJ packages