KMM536512B8
Abstract: KMM53651 KMM536512B
Contextual Info: 536512B DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536512B is a 51 2K bit X 36 Dynamic RAM high density memory module. The Sam sung KM M 536512B consist of sixteen CMOS 2 5 6 K X 4
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kmm536512b512kx36536512b20-pin+518-pin72-pinkmm53651536512b-kmm536512b8
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Contextual Info: SAMSUNG ELECTRONICS INC 42E » • 7 ^ 4 1 4 2 QG1DSQ7 7 E3SMGK 536512B DRAM MODULES i 5 1 2 K X 3 6 DRAM S IM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M 536512B- 7 • • • • • • • tR A C tC A C tR C 130ns 70ns
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kmm536512b536512b-130nskmm53651+4150ns2b-10536512b20-pin
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23C1001
Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5
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km41c1000c-6km41c1000cl-6km41c1000csl-6256kx4+15km44c256c-6km44c256cl-6km44c256cl-744c256cl-8km44c256csl-623c1001kmm5334100km 23c 4000bkmm5362003ckm681001-25km68v257km428v25623c40014100cm681000
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a
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Contextual Info: 536512B DRAM MODULES 5 1 2 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 5 1 2 B is a 5 1 2K bit X 3 6 Dynamic RAM high density memory module. The Sam sung K M M 5 3 6 5 1 2 B consist of sixteen CMOS 2 5 6 K X 4
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kmm536512b20-pin18-pin72-pin+1130ns
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KMM5334100
Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
Contextual Info: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13
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kmm581000cn-6/7/8kmm591000cn-6/7/8kmm5362203aw/wg-6/7/8kmm5362209au/aug-6/7/8+8kmm5334100lm 8227kmm591000cn-6lm 8251m53641kmm5368103ay 4m1/detector/"detector ic"/"cd"/4mx8 dram simm
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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km4164bpkm41c256pkm41c256jkm41c256z+14km41c257pkm41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm41c1000bjkm44c256bpkm41c1000bpkm41c1001bpkm44c256bjkm4164km44c1000ljkm41c464z
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