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    5309T Search Results

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    Microchip Technology Inc CDLL5309/TR

    - Tape and Reel (Alt: CDLL5309/TR)
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    Avnet Americas CDLL5309/TR Tape & Reel 40 Weeks 141
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    Mouser Electronics CDLL5309/TR
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    Newark CDLL5309/TR Bulk 500
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    Microchip Technology Inc CDLL5309/TR 40 Weeks
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    Master Electronics CDLL5309/TR
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    Microchip Technology Inc 1N5309/TR

    Discrete Current Regulator 3mA 2.25V 2-Pin Axial DO-7 - Tape and Reel (Alt: 1N5309/TR)
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    Avnet Americas 1N5309/TR Tape & Reel 25 Weeks 100
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    Mouser Electronics 1N5309/TR
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    Newark 1N5309/TR Bulk 500
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    Microchip Technology Inc 1N5309/TR 25 Weeks
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    Avnet Silica 1N5309/TR 27 Weeks 1
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    Master Electronics 1N5309/TR
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    Central Semiconductor Corp 1N5309 TR

    - Tape and Reel (Alt: 1N5309 TR)
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    Avnet Americas 1N5309 TR Tape & Reel 10,000
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    onsemi HUFA75309T3ST

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    Avnet Americas HUFA75309T3ST Tape & Reel 2,500
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    Vishay Intertechnologies M39003/01-5309/TR

    Tantalum Capacitor, 1.5 uF, 75 V, ? 5%, Axial Leaded, P, 4.7 mm, 12.04 mm - Tape and Reel (Alt: M39003/01-5309/TR)
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    Avnet Americas M39003/01-5309/TR Tape & Reel 36 Weeks 1,000
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    Newark M39003/01-5309/TR Tape & Reel 1,000
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    5309T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :


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    5309t100usmil-std-130824w170+3824f036755w002423f006 PDF

    Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :


    Original
    5309t100usmil-std-130qa0006+2form0357mc0023 PDF

    FORM0357

    Abstract: MIL-STD-130
    Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :


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    5309t100usmil-std-130qa0006+3form0357mc002308-e1008 PDF

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Contextual Info: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


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    idt71v67703idt71v67903idt71v67703/7903bg119+2119bgs71v67903 PDF

    Contextual Info: TERMINATIONS AND RESISTORS HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified


    OCR Scan
    PDF

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Contextual Info: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    idt71v67703idt71v67903idt71v67703/7903119bgs+171v67903 PDF

    71V67903

    Contextual Info: 256K X 36, 512K X 18 Advance 3.3V Synchronous SRAMs Information 3.3V I/O, Burst Counter IDT71V67703 Flow-Through Outputs, Single Cycle Deselect IDT71V67903 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data


    Original
    idt71v67703idt71v67903117mhz100mhz+687mhz100-pinbq165bg119x403371v67903 PDF

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Contextual Info: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    idt71v67703idt71v67903idt71v67703/7903119bgs+171v67903 PDF

    5309L

    Contextual Info: HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified


    OCR Scan
    5309l PDF

    71V67903

    Contextual Info: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    idt71v67703idt71v67903idt71v67703/7903bq165+3bg119x403371v67903 PDF

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Contextual Info: 256K X 36, 512K X 18 Advance 3.3V Synchronous SRAMs Information 3.3V I/O, Burst Counter IDT71V67703 Flow-Through Outputs, Single Cycle Deselect IDT71V67903 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data


    Original
    idt71v67703idt71v67903idt71v67703/7903bq165+3bg119x403371v67903 PDF

    71V67903

    Contextual Info: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    idt71v67703idt71v67903117mhz100mhz+687mhz100-pinbq165bg119x403371v67903 PDF