5309T Search Results
5309T Price and Stock
Microchip Technology Inc 1N5309-TRDIODE CUR REG 100V 3.3MA 500MW |
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1N5309-TR | Reel | 100 |
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Microchip Technology Inc CDLL5309-TRDIODE CUR REG 100V 3.3MA 500MW |
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CDLL5309-TR | Reel | 200 |
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onsemi HUF75309T3STMOSFET N-CH 55V 3A SOT223-4 |
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HUF75309T3ST | Reel | 2,500 |
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onsemi HUFA75309T3STMOSFET N-CH 55V 3A SOT223-4 |
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HUFA75309T3ST | Reel | 2,500 |
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HUFA75309T3ST | Reel | 2,500 |
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Rochester Electronics LLC HUFA75309T3STMOSFET N-CH 55V 3A SOT223-4 |
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HUFA75309T3ST | Bulk | 662 |
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5309T Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C : |
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5309T 100US 5309T" MIL-STD-130. 824W170 824F036 755W002. 423F006 | |
Contextual Info: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C : |
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5309T 100US 5309T" MIL-STD-130. QA0006 FORM0357 MC0023. | |
FORM0357
Abstract: MIL-STD-130
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5309T 100US 5309T" MIL-STD-130. QA0006 FORM0357 MC0023. 08-E1008 MIL-STD-130 | |
IDT71V67703
Abstract: IDT71V67903 71V67903
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IDT71V67703 IDT71V67903 IDT71V67703/7903 BG119 119BGS IDT71V67703 IDT71V67903 71V67903 | |
Contextual Info: TERMINATIONS AND RESISTORS HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified |
OCR Scan |
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IDT71V67703
Abstract: IDT71V67903 71V67903
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IDT71V67703 IDT71V67903 IDT71V67703/7903 119BGS IDT71V67703 IDT71V67903 71V67903 | |
71V67903Contextual Info: 256K X 36, 512K X 18 Advance 3.3V Synchronous SRAMs Information 3.3V I/O, Burst Counter IDT71V67703 Flow-Through Outputs, Single Cycle Deselect IDT71V67903 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data |
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IDT71V67703 IDT71V67903 117MHz 100MHz 87MHz 100-pin BQ165 BG119 x4033 71V67903 | |
IDT71V67703
Abstract: IDT71V67903 71V67903
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IDT71V67703 IDT71V67903 IDT71V67703/7903 119BGS IDT71V67703 IDT71V67903 71V67903 | |
5309LContextual Info: HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified |
OCR Scan |
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71V67903Contextual Info: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to |
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IDT71V67703 IDT71V67903 IDT71V67703/7903 BQ165 BG119 x4033 71V67903 | |
IDT71V67703
Abstract: IDT71V67903 71V67903
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IDT71V67703 IDT71V67903 IDT71V67703/7903 BQ165 BG119 x4033 IDT71V67703 IDT71V67903 71V67903 | |
71V67903Contextual Info: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to |
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IDT71V67703 IDT71V67903 117MHz 100MHz 87MHz 100-pin BQ165 BG119 x4033 71V67903 |