530 TRANSISTOR Search Results

V62C518256LL-70P

Abstract: basic stamp2 AN-051 DS1225 DS1230 T2400 8kx8 RAM AN052 32kx8 sram AN051
Contextual Info: RAMPack B Serial RAM Module *Byte/Block Addressing *Sequential Buffer Mode *Multiple Baud Rates *8K to 32K Bytes of RAM SOLUTIONS CUBED 3029-F Esplanade Chico, CA 95973 phone 530 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES

pic tachometer circuit

Abstract: of pwm based bidirectional dc motor speed con AN253 maxim motor mind c basic stamp 2 Tachometer circuit 09C4H 5-30V A3952SLB AN-252
Contextual Info: Shown without heat sink Motor Mind B DC Motor Control Module *Adjust Speed/Direction *Easy Serial Interface *Tachometer/Counter Input SOLUTIONS CUBED 256 East 1st Street Chico, CA 95928 phone (530) 891-8045 fax (530) 891-1643 www.solutions-cubed.com MINIATURE ENGINEERING MODULES

PWR530

Contextual Info: User's Guide SLVU890 – April 2013 TPS54531EVM-530, 5-A Regulator Evaluation Module This user's guide contains information for the TPS54531EVM-530 evaluation module as well as for the TPS54531. Included are the performance specifications, schematic, and the bill of materials of the

"7 segment display" 3102

Contextual Info: Temperature measurement with current output and PNP/NPN transistor switching output output 2 reprogrammable as switching output TS-530-LI2UPN8X-H1141-L016 • ■ ■ ■ Rotatable after mounting the process connection Reading of adjusted values without tools

Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : VDgg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ. Complementary to 2SJ201

2SK1530

Abstract: 2SJ201
Contextual Info: TOSHIBA 2SK1530 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 530 HIGH POWER AMPLIFIER APPLICATION • • • Unit in mm High Breakdown Voltage : Vj gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.) Complementary to 2SJ201

74149

Abstract: TFK 19 001 TBA520 colour television block diagram tfk 332 aj60 TFK 108 TFK diodes application Y178
Contextual Info: TBA 530 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendung: RGB-Matrix und -Vorverstärker für PAL-Farbfernsehempfänger Application: RGB matrix and pre-amplifier for PAL colour television receivers Besondere Merkmale: Features:

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm Low ON-resistance: Ron = 530 m max (@VGS = 4 V) Ron = 310 m (max) (@VGS = 10 V) 2.1±0.1 1.7±0.1 Drain-source voltage Rating Unit

Contextual Info: EPC8002 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 65 V • RDS on , 530 mΩ • ID, 2 A • Optimized eGaN FET for high frequency applications • Pb-Free (RoHS Compliant), Halogen Free EPC8002 eGaN FETs are supplied only in

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 2.1±0.1 Low ON-resistance: 1.7±0.1 Ron = 530 mΩ max (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V) Lead (Pb)-free 2.0±0.1 •

SSM3K106TU

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm 2.1±0.1 • Lead Pb -free 1.7±0.1 Ron = 530 mΩ (max) (@VGS = 4 V) 2.0±0.1 Ron = 310 mΩ (max) (@VGS = 10 V) Characteristic Drain-source voltage

Contextual Info: Philips Semiconductors k b S 3 T 3 1 Q 031535 530 • A P X ^Pfoductspecification PNP 4 GHz wideband transistor BFQ32C N AUER PHILIPS/DISCRETE DESCRIPTION blE » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes. It is

SSM3K106TU

Contextual Info: SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: 2.1±0.1 Ron = 530 mΩ max (@VGS = 4 V) 1.7±0.1 Unit VDS 20 V V VGSS ± 20 DC ID 1.2 Pulse

Contextual Info: FQB11N40C N-Channel QFET MOSFET 400 V, 10.5 A, 530 mΩ Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

dvr schematic

Contextual Info: PRELIMINARY TECHNICAL DATA Preliminary Technical Data Ultra Precision Shunt-Mode Voltage Reference ADR520/525/530/540/545/550 FEATURES Ultra Compact SC70 and SOT23 Packages Temperature Coefficient: 25 ppm/؇C Max. Initial Accuracy: +0.2% Low Output Voltage Noise: 4 ␮V p-p

Contextual Info: MCP6491 7.5 MHz, Low-Input Bias Current Op Amps Features Description • Low Input Bias Current - 150 pA typical, TA = +125°C • Low Quiescent Current - 530 µA/amplifier (typical) • Low Input Offset Voltage - ±1.5 mV (maximum) • Supply Voltage Range: 2.4V to 5.5V

Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F 530 IR F 5 3 0 F I . . . . . . . . V d ss R d S o ii 100 V 100 V < 0.1 6 Q. < 0.1 6 Q. Id 16 11 A A TYPICAL RDs(on) =0.12 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

EIA530A

Abstract: LTC1543 LTC1544 MXL1344A MXL1543
Contextual Info: 19-1929; Rev 1; 9/01 +5V Multiprotocol, 3Tx/3Rx, SoftwareSelectable Clock/Data Transceivers Features ♦ MXL1543, MXL1544/MAX3175, and MXL1344A Chipset Is Pin Compatible with LTC1543, LTC1544, and LTC1344A ♦ Supports RS-232, RS-449, EIA-530, EIA-530A, V.35, V.36, and X.21

LT082

Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max

Hall-Effect-Sensor

Abstract: hall effect sensor OH180U "Hall Effect Sensor" OHB900
Contextual Info: 0 . OPTEK Product Bulletin OHB900 January 1996 Hallogic Hall Effect Sensor Assembly Type OHB900 € .530 13.46 1.03 (26.16) 1.01 (25.6S) b k .240 (S.10) .u s^ a .a a )-, ELEMENT £ 135 (3.43) 115 (2.92) .335 ( 8 . 51) Ms OiMENSIGNS ARE IN INCHES (MILLIMETERS)

Contextual Info: 19-1929; Rev 1; 9/01 +5V Multiprotocol, 3Tx/3Rx, SoftwareSelectable Clock/Data Transceivers Features ♦ MXL1543, MXL1544/MAX3175, and MXL1344A Chipset Is Pin Compatible with LTC1543, LTC1544, and LTC1344A ♦ Supports RS-232, RS-449, EIA-530, EIA-530A, V.35, V.36, and X.21

Contextual Info: MCP6491/2/4 7.5 MHz, Low-Input Bias Current Op Amps Features Description • Low-Input Bias Current - 150 pA typical, TA = +125°C • Low Quiescent Current - 530 µA/amplifier (typical) • Low-Input Offset Voltage - ±1.5 mV (maximum) • Supply Voltage Range: 2.4V to 5.5V

relay pcb

Abstract: ADC-03
Contextual Info: Solid State Relays PCB, 1-Phase DCS Type RP 530 .-.-0 • DC Solid State Relay for PCB mounting • Rated operational current: 1 and 3 ADC • Operational voltage range: Up to 350 VDC • Input range: 3 to 32 VDC • Insulation: OPTO input-output 4000 VACrms

530 transistor

Abstract: solid state relay pcb relay pcb solid state relay dcs ADC DIAGRAMS ADC-03 DC solid state relay RP 530 200 4-0
Contextual Info: Solid State Relays PCB, 1-Phase DCS Type RP 530 .-.-0 • DC Solid State Relay for PCB mounting • Rated operational current: 1 and 3 ADC • Operational voltage range: Up to 350 VDC • Input range: 3 to 32 VDC • Insulation: OPTO input-output 4000 VACrms