EPC8002 Search Results
EPC8002 Datasheets (3)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| EPC8002 | EPC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 65V 2.7A BUMPED DIE | Original | 1.88MB | |||
| EPC8002ENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 65V 2A BUMPED DIE | Original | 7 | |||
| EPC8002TENGR | Efficient Power Conversion | FETs - Single, Discrete Semiconductor Products, TRANS GAN 65V 2A BUMPED DIE | Original | 7 |
EPC8002 Price and Stock
Efficient Power Conversion
Efficient Power Conversion EPC8002GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 |
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EPC8002 Datasheets Context Search
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Contextual Info: EPC8002 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 65 V • RDS on , 530 mΩ • ID, 2 A • Optimized eGaN FET for high frequency applications • Pb-Free (RoHS Compliant), Halogen Free EPC8002 eGaN FETs are supplied only in |
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epc8002 | |
EPC8004Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been |
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an015epc8000ats-54150k-c2-r0epc8004 |