52N50C3 Search Results

52N50C3 Price and Stock

Filter by Manufacturer

Infineon Technologies AG


Infineon Technologies AG SPW52N50C3 IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	SPW52N50C3		3			1 $10.00 10 $10.00 100 $7.50 1000 $6.50 10000 $6.50	Buy Now
Vyrian	SPW52N50C3		873			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPW52N50C3FKSA1 Power Field-Effect Transistor, 52A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	SPW52N50C3FKSA1		12,056			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPW52N50C3XK Power Field-Effect Transistor, 52A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	SPW52N50C3XK		773			1 - 10 - 100 - 1000 - 10000 -	Get Quote

52N50C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
52N50C3 Abstract: s4615 SPW52N50C3 Contextual Info: 52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 p-to247 q67040-s4615 52n50c3 +1s4615	PDF
Contextual Info: 52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • Worldwide best RDS(on) in TO-247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 o-247 pg-to247 52n50c3 +1009-134-a	PDF
52n50c3 Abstract: SPW52N50C3 Contextual Info: 52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 o-247 pg-to247 52n50c3 +1009-134-a	PDF
52N50C3 Abstract: SPW52N50C3 Contextual Info: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 pg-to247 q67040-s4615 52n50c3	PDF
52n50c3 Abstract: SPW52N50 Contextual Info: 52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 p-to247 q67040-s4615 52n50c3 +1spw52n50	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
s4615 Abstract: 52N50C3 SPW52N50C3 Contextual Info: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 pg-to247 q67040-s4615 52n50c3 +3009-134-a o-247 s4615	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
52n50c3 Abstract: s4615 SPW52N50C3 Contextual Info: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 p-to247 q67040-s4615 52n50c3 +1s4615	PDF
Contextual Info: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 pg-to247 q67040-s4615 52n50c3	PDF
Contextual Info: 52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	spw52n50c3 pg-to247 q67040-s4615 52n50c3	PDF