51V6 Search Results

Contextual Info: CM C! Sem iconductor MSM 51V64805 E2G1015-17-42 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64805 is a 8,388,608-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64805 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor E2G1013-17-43 M SM 51V64800_ 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The 51V64800is a 8388,608-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64800 achieves high integration, high-speed operation, and low-power

S5400A

Abstract: RO3035
Contextual Info: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow

hy51v65804

Contextual Info: 51V65804, 51V64804 HYUNDAI 8M x 8-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 6 4 M bit d y n a m ic R A M o rg a n iz e d 8 ,3 8 8 .6 0 8 x 8 -b it c o n fig u ra tio n w ith E x te n d e d D ata

v64_5

Abstract: 51V65400 HY51V65400
Contextual Info: “HYUNDAI 51V64400, 51V65400 _16M x 4-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high

Contextual Info: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )

Contextual Info: O K I Semiconductor MSM51 V65165 _ E 2 G 1 0 2 0 -1 7 -4 2 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V65165 is a 4,194304-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The 51V65165 achieves high integration, high-speed operation, and low-power

MD51V64405

Abstract: MD51V64405-50 MD51V64405-60
Contextual Info: E2G0137-18-11 O K I Semiconductor Thisvereion:^ 1998 51V64405_ 16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO D ESC R IPTIO N The 51V64405 is a 16,777,216-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

Contextual Info: O K I Semiconductor 51V65800 E 2 G 1 0 1 4 -1 7 -4 3 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V65800 is a 8,388,608-word x 8-bit dynamic RAM fabricated in Oki's si!icon-gate CMOS technology. The 51V65800 achieves high integration, high-speed operation, and low-power

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .

Contextual Info: 51V65800, 51V64800 •HYUNDAI 8M x 8-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION T his fam ily is a 64M bit d yn a m ic RAM organized 8,388,608 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed

Contextual Info: O K I Semiconductor MSM51 V64165 _ E 2 G 1 0 1 9 -1 7 -4 2 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64165 is a 4,194,304-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64165 achieves high integration, high-speed operation, and low-power

MSM51V64405

Contextual Info: O K I Semiconductor MSM5 1V64405_ E 2G 1011-17-42 16,777,216-Word x 4-Blt DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64405 is a 16,777,216-word x 4-bit dynamic RAM fabricated in Old's silicon-gate CMOS technology. The 51V64405 achieves high integration, high-speed operation, and low-power