51C SEMICONDUCTOR Search Results

Contextual Info: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G ENERAL DESCRIPTION The M S M 51C 256A is a new generation dynam ic RAM organized as 262,144-w ord x 1-bit. The technology used to fabricate the M SM 51C 256A is O K I’s C O M S silicon gate process te ch ­

M51C464A

Abstract: 51C464A-10 MSM51C464A70RS 51c464 MSM51C464A-70RS
Contextual Info: O K I semiconductor MSM51C464A 65,536-W ord x 4-B it DYN A M IC RAM GENERAL DESCRIPTION T he M S M 51C 464A is a new generation dynam ic RAM organized as 65.536-w ord x 4-bit. The technology used to fabricate the M S M 51C 464A is O K I’s C M O S silicon gate process tech nol­

c 2316

Contextual Info: O K I semiconductor MSC2316-xxYS9 262,144 BY 9 BIT DYNAMIC RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T h e Oki M S C 2316-xxY S 9 is a fully decoded, 262,144 word x 9 bit C M O S dynam ic random access memory com posed of nine 2 5 6 K D R A M s in plastic leaded chip carrier M SM 51C 256JS . T h e mounting

TPC 8406

Abstract: HY51C1000-12 HY51C1000-10 RM1410 W777777 29793 83464 hyundai chip id
Contextual Info: HYUNDÛJ HY51C1000 S E M IC Ü N Ü U U T Ü K lM X 1-Bit CMOS DRAM M131202A-SEP90 DESCRIPTION FEATURES T h e H Y 51C1000 is a high speed, low pow er 1,048,576X1 bit C M O S dynam ic ran d o m a c ­ cess m em ory. F ab rica ted w ith th e H Y U N D A I C M O S process, th e H Y 51C 1000 offers a fast

20 mf 25 metal rectifier diode

Abstract: 2N6277 equivalent 1N5817 2N2222 2N6277 MBR1020 MBR1035 MBR1045 2N22220
Contextual Info: 6367255 MOTOROLA SC 51C D I O D E S /OPTO ;t3t?aSS 005753fl 57538 î - /7 I MOTOROLA M B R 1 0 2 0 M B R 1 0 3 5 SEM IC O N D U C TO R S M B R I0 4 5 P.O. BOX 20912 • PHOENIX, ARIZO NA 85036 n a y SCHOTTKY BARRIER RECTIFIERS S W IT C H M O D E P O W E R R E C T IF IE R S

TLWW9600

Contextual Info: TLWW9600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

TLWW9900

Contextual Info: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

Contextual Info: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

Contextual Info: TLWW9600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

Contextual Info: TLMW3146 VISHAY Vishay Semiconductors High Intensity SMD LED Description This device have been designed to meet the increasing demand for white SMD LED. The package of the TLMW3146 is the PLCC-2 equivalent to a size B tantalum capacitor . It consists of a lead frame which is embedded in a

Contextual Info: TLWW9900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

TLWW8600

Contextual Info: TLWW8600 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

Contextual Info: TLWW8900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

Contextual Info: TLWW8900 VISHAY Vishay Semiconductors TELUX LED Description The TELUX™ series is a clear, non diffused LED for high end applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed InGaN technology.

2SC4764

Contextual Info: SavantIC Semiconductor Product Specification 2SC4764 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display

FZJ 131

Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
Contextual Info: K I SEflICONDUCTOR GROUP IDE D g fc,754240 ÖD04143 b | O K I semiconductor MSM51C256RS/JS * 262,144 W O RD X1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

specification IC 741C

Contextual Info: TMS320C240, TMS320F240 DSP CONTROLLERS S PR S 042A-O C TO BER 1996-R E V IS E D DECEMBER 1997 • • • High-Performance Static CMOS Technology Includes the T320C2xLP Core CPU - Object Com patible With the TMS320C2xx - Source Code Compatible With TMS320C25

75W HI FI AMPLIFIER

Abstract: SC54B 2SC54b S-059
Contextual Info: D E J| c]Qcì7SSD OGOlñST 1 iñ TOSHIBA {D ISCRETE/ OPTO } 39C 0 1 8 5 9 , SEMICONDUCTOR D T " 3 3 -Ö TOSHIBA TRANSISTOR 2 SC54B ^ 2 S I L I C O N NPN E P I T A X I A L TECHNICAL DATA » P LANAR fi I * ffl IN D U S T R IA L A P P L IC A T IO N S O VHF * * * <S ffl

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

Contextual Info: O K I semiconductor MSM51C464A 65,536-Word x 4-Bit DYNAMIC RÀM GENERAL DESCRIPTION T h e M S M 5 1 C 4 6 4 A is a n e w g e n e ra tio n d y n a m ic R A M o rg a n iz e d a s 6 5 .5 3 6 -w o rd x 4 -b it. T h e te c h n o lo g y u s e d to fa b ric a te th e M S M 5 1 C 4 6 4 A is O K I’s C M O S s ilic o n g a te p ro c e s s te c h n o l­

18-PIN

Abstract: 20-PIN MSM51C464A MSM51C464A-10 MSM51C464A-70 MSM51C464A-80 ZIP20-P-400 msm51c464 DD177
Contextual Info: O K I Semiconductor MSM5 1C4 6 4 A 65,536-Word x 4-B it DYNAMIC RAM DESCRIPTION The MSM51C464A is a new generation dynamic RAM organized as 65.536-word x 4-bit. The technology used to fabricate the MSM51C464A is OKI's CMOS silicon gate process technology. The

MG10G6EL2

Contextual Info: "TG TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR DE I T t m s s o D D G lb n S a | ~ 90D 16195 D TOSHIBA GTR MODULE MG10G6EL2 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

a22t

Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA LED LAMP T LRAG 2 9 6 t e c h n ic a l d a t a GaA l A s RE D / G a P G r e e n L I G H T E M I S S I O N TENTATIVE DUAL COLOR PANEL CIRCUIT INDICATOR 5mm DIAMETER Tl-3/4 FE A T U R E S . H igh Bri g h t D u a l C o l o r Emi s s i o n