512X8 PROM Search Results

Monolithic Memories

Abstract: S485A 512x8 53S485 63S485 63S841
Contextual Info: High Performance 512x8 PROM TiW PROM Fam ily 5 3 /6 3 S 4 8 5 Features/Benefits Description • Upward pinout-compatible with higher density PROMs The 53S485 and 63S485 are 512x8 bipolar PROMs featuring low current PNP inputs, full Schottky clam ping, and three-state

Monolithic Memories PROM programming

Abstract: 512X8 53S485 63S485 generic prom programming
Contextual Info: High Perform ance 512x8 PROM TiW PROM Fam ily 5 3 /6 3 S 4 8 5 CSS485 Features/ Benefits Description • Upward pinout-compatible with higher density PROMs The 53S485 and 63S485 are 512x8 bipolar PRO M s featuring low current PNP inputs, full Schottky clamping, and three-state

Contextual Info: High Performance 512x8 PROM TiW PROM Family 5 3 /6 3 S 4 8 5 £ 3-HSS Features/ Benefits Description • U pward pinout-com patible with higher density PROMs The 53S485 and 63S485 are 512x8 bipolar PROMs featuring low current PNP inputs, full Schottky clamping, and three-state

63S481

Abstract: 53S481A 53S481
Contextual Info: High Performance 512x8 PROM TiW PROM Family 53/63S480 53/63S481 53/63S481A Features/ Benefits Description • 30 ns maximum access time The 53/63S480 and 53/63S481/A are 512x8 bipolar PROMs featuring low input current PNP inputs, full Schottky clamping, and open collector or three-state outputs. The titanium-tungsten

63RA481

Abstract: 53RA481 53RA481A 63RA481A
Contextual Info: High Performance 512x8 Registered PROM 5 3 /6 3 R A 4 8 1 5 3 /6 3 R A 4 8 1 A Features/B enefits Description • Versatile synchronous and asynchronous enables The 53/63RA481 and 53/63RA481A are 512x8 Registered PROMs with on-chip “D” type registers, versatile output enable control

Contextual Info: High Performance 512x8 Registered PROM 5 3 /6 3 R A 4 8 1 5 3 /6 3 R A 4 8 1 A ¿ s RA 4 ?/ Features/Benefits Description • Versatile synchronous and asynchronous enables The 53/63RA481 and 53/63RA481A are 512x8 Registered PROMs with on-chip "D" type registers, versatile output enable control

74S471

Abstract: mmi 6331 74S287 MMI 6330 74s188 programming AMD 27S21 MMI 6309 6306 MMI 74S188 74S288 PROGRAMMING
Contextual Info: V1.6 Jan 13,1999 Fujitsu -7051 7052 7053 7057 7111 32x8 7112 32x8 7113 256x4 7114 256x4 7115 512x4 7116 512x4 7117 256x8 7118 256x8 7121 1kx4 7122 1kx4 7123 512x8 7124 512x8 7126 7127 7128 2kx4 7131 7132 1kx8 7134 4kx4 7137 2kx8 7138 2kx8 7142 4kx8 7144 8kx8

WE VQE 23 F

Abstract: WE VQE 11 E WE VQE 24 E X2804A X2804AM X2804AM-35 X2804AM-45
Contextual Info: ü 4K Military X2804AM n 512x8 Bit _ Electrically Erasable PROM_ FEATURES • Simple Byte Write Operation — No High Voltages Necessary —Single TTL Level WE Signal Modifies Data

Contextual Info: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data

d00936

Contextual Info: Am27S27 Am27S27 4,096-Bit 512x8 Bipolar Registered PROM DISTINCTIVE CHARACTERISTICS • • • On-chip, edge-triggered registers — ideal for pipelined microprogrammed systems Versatile synchronous and asynchronous enables for simplified word expansion

CD4022

Abstract: C04022
Contextual Info: Am27S27/27S27A Adva^ 4,096-Bit 512x8 Bipolar Registered PROM Devices DISTINCTIVE CHARACTERISTICS • • • On-chip, edge-triggered registers— ideal for pipelined microprogrammed systems Versatile synchronous and asynchronous enables for sim plified word expansion

27S27

Abstract: 22-PIN CERAMIC DIP CD4022
Contextual Info: Am27S27/27S27A Ad,a£ 4,096-Bit 512x8 Bipolar Registered PROM Devices DISTINCTIVE CHARACTERISTICS • • • On-chip, edge-triggered registers — ideal for pipelined microprogrammed systems Versatile synchronous and asynchronous enables for simplified word expansion

82s141

Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max

82S147B

Abstract: F0180 mux 8 to 1 timing
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding

x2864

Abstract: X2864A x2864b X24LC04D X24LC04DI X24LC04P X24LC04PI X24LC04S X24LC04SI
Contextual Info: im PRELIMINARY INFORMATION X24LC04 X24LC04I Commercial Industrial 4K 512x8 Bit Electrically Erasable PROM TYPICAL FEATURES • 3 V -6 V Vcc Operation • Low Power CMOS — 2 mA Active Current Typical —60 ixA Standby Current Typical • Internally Organized as Two Pages

27S31

Contextual Info: Am27S31 /27S31A ««J 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide

NCC 5551

Abstract: CI 555 data X20C04 X20C05 X20C16 IS555
Contextual Info: Advance Information X20C05 4K 512x8 High Speed AUTOSTORE NOVRAM_ FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum • Power-on Recall

27S31A

Abstract: 27S31 AM27S31/BJA AM27S31 AM27S31A CD 024 512X8 AM27S31PC CFM024
Contextual Info: a Am27S31 /27S31A Mva c^ 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide

82S147

Abstract: 8 bit ttl mux mux 8 to 1 timing mux 8/3 82S147A 4k prom
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S147 82S147A 4K-bit TTL bipolar PROM 512x8 FEATURES DESCRIPTION • Address access time: 75ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding

27s31

Contextual Info: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide

Contextual Info: QSK 512x8 Bit X2404M Military 4K Electrically Erasable PROM TYPICAL FEATURES • Internally Organized as Two Pages —Each 256 x 8 • 2 Wire Serial Interface • Provides Bidirectional Data Transfer Protocol • Eight Byte Page Write Mode —Minimizes Total Write Time Per Byte

AM27S29

Abstract: KS000010 AM27S29A AM27S29SA CERAMIC FLATPACK 20pin AM27S29PC am27s29bra
Contextual Info: M^ 0 Am27S29/Am27S29A/Am27S29SA 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • • High Speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-cotlector and three-state outputs

AM27S29

Abstract: 512x8 PROM AM27S29/BRA AM27S29A AM27S29SA AMD PROM Selector guide
Contextual Info: a Am27S29/Am27S29A/Am27S29SA Adva^ 4,096-Bit 512x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • • High Speed Highly reliable, ultra-last programming Platinum-Silicide fuses • High programming yield • Low-current PNP inputs • High-current open-collector and three-state outputs

Contextual Info: Am27S25/27S25A/27S25SA arf E l Advanced Micro Devices 4096-Bit 512x8 Bipolar Registered PROM with Preset and Clear Inputs DISTINCTIVE CHARACTERISTICS • • • • ’SA' version offers ultrafast AC performance {25 ns set­ up and 12 ns clock-to-output)