512MX64 Search Results

Contextual Info: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of

Contextual Info: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of

Contextual Info: SG564128FG8NZUU March 4, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8NZDB 512Mx64 4GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

K/DDR31066-666

Contextual Info: SG564128FH8NZUU February 23, 2009 Ordering Information Part Numbers Description Module Speed SG564128FH8NZKA 512Mx64 4GB , DDR3, 204-pin Unbuffered SO-DIMM, Non-ECC, 256Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG564128FH8NZ6B

Contextual Info: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of

DDR3-1066

Abstract: DDR3-1333 PC3-10600
Contextual Info: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of

Contextual Info: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3  0.3V power supply

Contextual Info: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM

TH20594MC1.4

Abstract: 577b
Contextual Info: Product Specifications 3$57 12 VL47B5263A-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM WITH BGA DRAM COMPONENTS UNDER-FILLED Description 7KH 9/%$ LV D 0[ ''5 6'5$0 KLJK GHQVLW\ 62',00 7KLV PHPRU\ PRGXOH FRQVLVWV RI

MIL-I-46058C

Abstract: PC3-10600 204 pin so-DIMM DDR3 connector DDR3 sodimm 4gb samsung
Contextual Info: Product Specifications PART NO: VL47B5263Z-R9S/R8S/R7S-HS REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM HEAT SPREADER AND CONFORMAL COATING Description: The VL47B5263Z is a 512M X 64 DDR3 SDRAM high density SODIMM. This memory module

850C

Abstract: PC3-10600
Contextual Info: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM

Contextual Info: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3 ± 0.3V power supply

Contextual Info: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View - BGA 120 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3  0.3V power supply

Contextual Info: SG564128FG8N0UU January 11, 2009 Ordering Information Part Numbers Description Module Speed SG564128FG8N0DB 512Mx64 4GB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 256Mx8 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0

Contextual Info: Product Specifications PART NO.: VL47B5263A-F8SD-I REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with

Contextual Info: Product Specifications 3$57 12 VL47B5263A-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM WITH BGA DRAM COMPONENTS UNDER-FILLED Description 7KH 9/%$ LV D 0[ ''5 6'5$0 KLJK GHQVLW\ 62',00 7KLV PHPRU\ PRGXOH FRQVLVWV RI

Contextual Info: Product Specifications PART NO.: VL47B5463E-K9/F8/E7S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM VLP NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5463E is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module is single rank, consists

Contextual Info: SG564128FH8N0UU May 13, 2009 Ordering Information Part Numbers Description Module Speed SG564128FH8N0KA 512Mx64 4GB , DDR3, 240-pin Unbuffered DIMM, Non-ECC, 256Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG564128FH8N06B

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

Contextual Info: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

H5TQ2G63FFR-RDC

Abstract: H5TQ4G63MFRPBC H5TC8G83AMR-PBA HMT351U7EFR8C-PB H5TQ2G63DFR-PBC
Contextual Info: Page 1 DDR3 SDRAM Solder- Dow n VDD DENSI TY ORG. SPEED PART NUMBER PKG. FEATURE AVAI L. 1.5V 2Gb 256Mx8 DDR3 1866 H5TQ2G83EFR-RDC FBGA 78ball 8Bank, 1.5V, CL13,13-13-13 Now DDR3 1600 H5TQ2G83CFR-PBC FBGA(78ball) 8Bank, 1.5V, CL11,11-11-11 Now H5TQ2G83EFR-PBC

M378B5273BH1-CF8

Abstract: samsung dimm DDR3 SPD M391B5273BH1-CF8 M378B5273BH
Contextual Info: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 2Gb B-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: 2GB 4GB X64, SR, DR : 204-Pin DDR3 SDRAM SODIMM SDRAM DDR3 256M, 512M X 64 SODIMM 204-Pin 4GB SODIMM Assembly Features: •               DDR3 functionality and operations supported as defined in the component data sheet

HMT41GU6AFR8A

Contextual Info: 240pin DDR3L SDRAM Unbuffered DIMM DDR3L SDRAM Unbuffered DIMMs Based on 4Gb A-Die HMT425U6AFR6A HMT451U6AFR8A HMT451U7AFR8A HMT41GU6AFR8A HMT41GU7AFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 / May. 2013