5117805 Search Results

Sj70

Contextual Info: SIEMENS HYB 5117805BSJ -50/-60/-70 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n • 2 0 9 7 152 w o rd s b y 8-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

Nippon capacitors

Contextual Info: HB56U232BA/SBA Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-721B Z Rev. 2.0 May. 26, 1997 Description The HB56U232BA/SBA is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM (H M 5117805) sealed in SOJ package. The HB56U232BA/SBA offers Extended Data Out (EDO) Page

SMD MARKING CODE 2M

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC RAS access time 50 60 70 ns ^CAC

Contextual Info: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

D071521

Abstract: d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106
Contextual Info: SIEM EN S 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Information • • • 2 097 152 words by 8 -bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

Q67100-Q1104

Abstract: SOJ-28
Contextual Info: 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance: -50

Contextual Info: SIEM ENS 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Inform ation • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

Contextual Info: SIEM EN S 2M x 8-Bit Dynamic RAM 2k Refresh Hyper Page Mode-EDO HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

B77S

Contextual Info: SIEMENS 2M x 8-Bit Dynamic RAM 2k-Refresh Hyper Page Mode- EDO HYB 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 "C operating temperature • Performance: ^RAC ^CAC RAS access time -50 -60 -70 50 60 70

MSM5117805

Abstract: MSM5117805D 5117805D
Contextual Info: 作成 ：1999 年 1 月 電子デバイス M SM 5117805D 2,097,152-Word x 8-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117805D はCMOS プロセス技術を用いた 2,097,152 ワードx8 ビット構成のダイナミックラ

Contextual Info: 5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM 5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM 5117805 offers Extended

Contextual Info: 5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi 5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bits. It uses the most advanced CMOS technology for high performance and low power. The 5117805 offers extended data

Contextual Info: 5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630 C Z Rev. 3.0 Feb. 25,1997 Description The Hitachi 5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The 5117805 offers Extended

Q67100-Q1104

Abstract: Q67100-Q1105 Q67100-Q1106
Contextual Info: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO 5117805BSJ -50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

thv8

Abstract: HYB39S16800T 16m x 4 hyb
Contextual Info: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15

Contextual Info: O K I Semiconductor MSM5 1 17805B_ E2G 0047-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117805B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5117805B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor 5117805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 5117805A achieves high integration, high-speed operation, and low-power

ra435

Abstract: MSM5117805 MSM5117805C
Contextual Info: E2G0113-18-42 O K I Semiconductor MSM5 1 17805C This version: A pr. 1998 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117805C is a 2,097,152-w ord x 8-bit dynam ic RAM fabricated in Oki's silicon-gate CMOS technology. The 5117805C achieves high integration, high-speed operation, and low-power

Contextual Info: HB56U264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Preliminary Description The HB56U264EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

74ABT

Contextual Info: HB56U264EJ Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-714A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U264EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: 5117805 Series 2,097,152-Word x 8-Bit Dynamic RAM HITACHI ADE-203-630 C Z Rev. 3.0 25 Feb 1997 Description The Hitachi 5117805 is a CMOS dynamic RAM organized as 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power consumption. The 5117805

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1