511740 Search Results

Nippon capacitors

Contextual Info: HB56U832 Series, HB56U432 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-736A Z Rev.1.0 Feb. 7, 1997 Description The HB56U832 is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (H M 5117405)

HB56A841BR-6A

Abstract: D8553
Contextual Info: HB56A841BR Series 8,388,608-Word x 40-Btt High Density Dynamic RAM Module HITACHI The HB56A841BR is a 8 M x 40 dynamic RAM m odule, m ounted 20 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A841BR is 72-pin single in­

5117400B

Abstract: in9668 HM5117400BLS-6 HM5117400BS6
Contextual Info: 5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi 5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM 5117400B offers Fast Page Mode

BST60

Contextual Info: TOSHIBA 5117400BSJ/BST60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheT C 5117400B S J/B S T is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T he T C 5117400B S J/ BST utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

Contextual Info: HB56A832 Series 8,388,608-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The H B 56A 832 is a 8M x 32 dynamic RAM module, mounted 16 pieces o f 16Mbit DRAM H M 5117400B S sealed in SOJ package. An outline o f the H B 5 6 A 8 3 2 is 72-pin single in-line package.

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

oki 117400

Contextual Info: O K I Semiconductor MSM5 117400 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The M SM 5117400 is a n ew generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the 5117400 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC23436-XXBS12/DS12 P^sjtooairy7 4,194,304-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23436-xxBS12/D S12 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access M em ory Module com posed of eight 16-Mb DRAM s in SOJ (M SM 5117400 packages and four 4-Mb

K2624

Abstract: D-50 D-60 MSM5117400 MSM5117400D MSM5117400D-50 MSM5117400D-60 MSM5117400D-70
Contextual Info: 作成 ：1999 年 5 月 電子デバイス M SM 5117400D 4,194,304-Word x 4-Bit DYNAMIC RAM : 高 速 ペ ー ジ モ ー ド • 概要 5117400D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

Contextual Info: SIEMENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

FPC-40

Abstract: K7C5 MSM5117400 pari in 5-pin MA004
Contextual Info: O K I Semiconductor MSC23440-XXBS10/DS10 P 7 UBranLu® try/ 4,194,304-W ord by 40-B it DRAM M odule: Fast Page Mode D E SC R IP TIO N The OKI M SC23440-xxBS10/D S10 is a fully decoded 4,194,304-w ord x 40-bit CMOS Dynamic Random Access Memory Module composed of ten 16-Mb DRAM s in SOJ M SM 5117400 packages mounted with

bt 33 f

Contextual Info: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature •

k2624

Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Contextual Info: 作成 ：1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

laptop mini pci slot pin details

Abstract: SiGe 2577 transistor BC 245 54MBPS RF5117C
Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Q67100-Q2366

Abstract: Q67100-Q2367 simm EDO 72pin
Contextual Info: 4M x 36-Bit EDO - DRAM Module HYM364025S/GS-50/-60 • SIMM modules with 4 194 304 words by 36-Bit organization for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time 104 ns cycle time (-60 version)

Contextual Info: 8M x 36-Bit EDO - DRAM Module HYM 368025S/GS-50/-60 • SIMM modules with 8 388 608 words by 36-bit organization in two banks for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time

5117400B

Abstract: 511740
Contextual Info: 8M x 40-Bit Dynamic RAM Module Low Power with Self Refresh HYM 408020SL-60 Preliminary Information • 72-Pin JEDEC standard Single-ln-Line Memory Module • 2 bank 8M x 40 organisation • Optimized for use in ECC applications • Fast Page Mode operation

MSM5117400C

Contextual Info: E2G0108-18-42 O K I Semiconductor This version: A pr. 1998 M S M 5 1 17400C 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N The M SM 5 1 17400C is a 4,194,304-w o rd x 4-bit d yn am ic R A M fabricated in O k i's silicon-gate C M O S

Contextual Info: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M x 4 and 4 pcs of 4 M x 1 Components)

Contextual Info: 8M x 32-Bit Dynamic RAM Module HYM 328020S/GS-50/-60 • SIMM modules with 8 388 608 words by 32-bit organization for PC main memory applications • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: RF5117C 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

b137 transistor

Contextual Info: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER Typical Applications • IEEE802.11B WLAN Applications • Commercial and Consumer Systems • IEEE802.11G WLAN Applications • Portable Battery-Powered Equipment • 2.5GHz ISM Band Applications • Spread-Spectrum and MMDS Systems

Contextual Info: HB56A832BS/SBS Series, HB56A432BR/SBR Series 8,388,608-word x 32-bit High Density Dynamic RAM Module 4,194,304-wordx 32-bit High Density Dynamic RAM Module HITACHI ADE-203-728A Z Rev.1.0 Feb. 20,1997 Description The HB56A832BS/SBS is a 8M x 32 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

Contextual Info: HB56U432B/SB-6BN/7BN/8BN 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-558 Z Preliminary - Rev.0.0 Apr.02,1996 Description The HB56U432 is a 4M X 32 dynamic RAM module, mounted (5117405BS) sealed in SOJ package. 8 pieces of 16-Mbit DRAM