511740 Search Results

WCs MARKING

Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation

MSM5117400

Contextual Info: O K I Semiconductor 5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

5117404

Contextual Info: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The 5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The 5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HB56T433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T433D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16 Mbit DRAM (HM 5117400BTS/BLTS) sealed in TSOP package. An outline of the HB56T433D is 72-pin

hm5x1

Contextual Info: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

5117405

Contextual Info: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The

k2624

Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Contextual Info: 作成 ：1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ

Q907

Abstract: Q67100-Q915 Q554b
Contextual Info: SIEM ENS 4 M X 4-Bit Dynamic RAM 2 k-refresh HYB 5117400AJ-50/-60/-70/-80 HYB 5117400ASJ-50/-60/-70/-80 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

M5117405

Abstract: msm5117405a Q020G m51174
Contextual Info: O K I Semiconductor_ MSM5 1 174 05 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION T he M SM 5117405A is a4,194,304-word x 4-bit d yn am ic R A M fab ricated in O K I’s C M O S silico n gate technology. The M SM 5117405A ach ieves h ig h in teg ratio n , high-speed operatio n, and low -pow er

SPT0305

Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version

THM324005BS

Contextual Info: TOSHIBA THM324005BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM 324005BS/BSG is a 4,194,304 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of T C 5117405BSJ on the printed circuit board. This m odule is optimized for application to the systems which

Contextual Info: M UT" >5" 5 HB56A441BR Series 4,194,304-Word x 40-Bit High Density Dynamic RAM Module Rev. 1 Mar. 1,1994 HITACHI The HB56A441BR is a 4 M x 40 dynamic RAM m odule, m ounted 10 pieces of 16-M bit DRAM H M 5117400A S sealed in SOJ package. An outline of the HB56A441BR is 72-pin single in­

ALRS8

Contextual Info: m iir 1^ 2 , 5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The

Contextual Info: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC

Contextual Info: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n

MSM5117400

Contextual Info: O K I Semiconductor MSC23436-xxBS12/DS12 4,194,304-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23436-xxBS12/D S12 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access M em ory M odule composed of eight 16-Mb DRAM s in SOJ M SM 5117400 packages and four 4-Mb

Contextual Info: O K I Semiconductor MSC23432-xxBS8/DS8 .rimUflMlMGy 4,194,304-Word by 32-Bit Dynamic RAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23432-xxB S8/D S8 is a fully decoded 4,194,304-w ord x 32-bit CM O S D ynam ic Random Access Mem ory M odule com posed of eight 16-Mb DRAMs in SOJ M SM 5117400 packages mounted with

thm3640*5

Contextual Info: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for

5J-70

Abstract: NT511740C5J-60 NT511740C5J NT511740C5J-50 NT511740C5J-70 4 bit dynamic ram NT511740C5J-XX
Contextual Info: 4,194,304-word x 4-bit Dynamic RAM : Fast Page Mode with EDO 511740C5J NT 511740C5J Data Sheet 1 4,194,304-word x 4-bit Dynamic RAM : Fast Page Mode with EDO 511740C5J 1. DESCRIPTION…………………………………………………………………………….…….3

marne

Abstract: MSM5117400
Contextual Info: O K I Semiconductor MSC23832-XXBS16/DS16 [PygOfl^DGUSlD^? 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23832-xxBS16/D S16 is a fully decoded 8,388,608-word x 32-bit CM OS dynamic Random Access Memory module composed of sixteen 16-Mb DRAM s in SOJ M SM 5117400 packages mounted

NT511740C5J-60

Abstract: NT5117405J Nanya Technology NT511740C5J NT511740C5J-50 NT511740C5J-70
Contextual Info: 5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO NT 511740C5J Data Sheet 1 NANYA TECHNOLOGY CORP. reserves the right to change products and specifications without notice. NANYA TECHNOLOGY CORP 5117405J 4,194,304-word X 4-bit Dynamic RAM : Fast Page Mode with EDO