51169 Search Results

LH5116H

Contextual Info: LH5116/H C M O S 16K 2 K x 8 S tatic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized a s 2 ,0 4 8 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

B57861S0103F040

Abstract: EPCOS b57861 25727 15521 101490 B57861S0103H040 B57861 5103 5638-10 B57861S0103J040 B57861S0502 040
Contextual Info: NTC thermistors for temperature measurement Miniature sensors with bendable wires Series/Type: Date: B57861 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

A5 GNC

Abstract: TSOP32-P-4QO-K 51V17400 5116100
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

5116 ram

Abstract: LH5116H DIP024-P-0600 SOP024-P-0450B 0450b
Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

LH5116H

Contextual Info: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 × 8 bit organization The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).

S862

Abstract: EPCOS 4641 3030-70 352580 B57862S0103F040 B57862 NTC 10 1042 B57862S0282F040 85948 DATASHEET OF ICls 741
Contextual Info: NTC thermistors for temperature measurement Miniature sensors with bendable wires Series/Type: Date: B57862 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

e33a

Contextual Info: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.

LCD 1602 display

Abstract: jrc 2360 supply JRC 2360 LCD 1602 2360 JRC LCD 1602 INTERFACE LCD display 1602 1602 lcd 1602 E lcd lcd 1602 a
Contextual Info: NJ U6 580 PRELIMINARY BIT MAP LCD DRIVER • G E N E R A L D E S C R IP T IO N ■ The N JU 6580 is a bit map LCD driver to display graphics characters. P A C K A G E O U T LIN E or It contains 1,904 bits display data RAM, microprocessor inter face circuits, instruction decoder, 96-segm ent and 17-common 1

168050

Abstract: 51169 3030-70 EPCOS 4684 101490 56326 B57867S0103F140 B57867S0103J140 27304 tr 13002
Contextual Info: NTC thermistors for temperature measurement Miniature sensors with bendable wires Series/Type: Date: B57867 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: L H 5 1 1 6 / H CMOS 16K 2K x 8 S ta tic RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

uras 4

Abstract: uras 2 5116100
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

Contextual Info: LH5116 FEATURES CMOS 16K 2K x 8 Static RAM DESCRIPTION • 2,048 • Access time: 100 ns (M AX.) The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode

EPCOS 5025

Abstract: 121-190 JIS K 5400 8.3 EPCOS 800 376 jis h 8502 B57221V2472J060 16888 440-240 B57221V2103J060 iec 90092
Contextual Info: NTC thermistors for temperature measurement SMD NTC thermistors with nickel barrier termination, case size 0402 Series/Type: Date: B572*V March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the

Contextual Info: Part Number Search Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Part Number Search Home Part Number Search Enter Part Number If you do not know the exact part number, select "Contains" or "Starts With" as the Search Method. No special characters are

led 7 segment LDS 5161 AK

Abstract: led 7 segment LDS 5161 AH 7-segment 4 digit LFD 5522 AKO 701 434 tdso 5160 k lds 7 segment LDS 5161 AK led 7 segment LDS 5161 As manual LG VARIABLE FREQUENCY DRIVE is3 -20/led 7 segment LDS 5161 AH ako 544 126
Contextual Info: NAM E; C O M P A N Y :. ADDRESS; . . C IT Y ; S TA TE: Z IP : C O U N T R Y :. P H O N E N O .; . .I — ;.-,. ' - V- ORDER NO. QTY. TITLE fTTT ±j . • . n i i lU . . II 11 1 i i 1111 1-T 2 .-.

transistor BU 102S

Abstract: ford ecu pinout free transistor equivalent book 2sc National Semiconductor Audio Handbook 1NA101 2N5564 equivalent spice model Tame Transducer Bridge Errors With Op-Amp Feedback Control DAC729 tkp transformer 74ls324
Contextual Info: K O PP GROUP ADVANCED SEMICONDUCTOR DEVICES PTY LTD. P.O. BOX 2944 JOHANNESBURG 2000 TEL. 802-5820 The Handbook of Linear 1C Applications The How-To Book for High-Performance Operational Amplifiers A/D Converters Instrumentation Amplifiers D/A Converters

Bv 42 transistor

Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Contextual Info: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.

DU9 308

Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.