510 MOSFET Search Results

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

EIGHT MOSFET ARRAY

Abstract: 7131a DIG-131A 7474 PIN DIAGRAM Isolated Feedback Generator an DIG-132 DIG-132A photovoltaic charge controller circuit
Contextual Info: C' D HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-131A DIG-132A 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER * EIGHT PIN ISOLATED GENERATION CONSUMPTION DIP PACKAGE APPLICATIONS

relays

Abstract: dil reed relay relay smd reed relay 0641 relay pcb 510 MOSFET MOSFET 546 Relay Mosfet Output relays datasheets
Contextual Info: RELAYS PRODUCT OVERVIEW A brief overview of the extensive range of relays shown on the following pages. SOLID STATE RELAYS MOSFET OUTPUT REED RELAYS Surface Mount & Through Hole pages 510-515 SIL, DIL & SMD page 516 PCB MOUNTING RELAYS SUB-MINIATURE SIGNAL

mosfet v0

Abstract: CA5260 CA5260T
Contextual Info: blE D HARRIS SEMICOND SECTOR m • 4302271 0Q4fc>427 510 B H A S CA5260 HARRIS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage provides • Very High 3 » 1.5TO 1 5 x 10120 Typ.

EIGHT MOSFET ARRAY

Abstract: transistor ac 132 Switch Mode Power Supplies ac dc mosfet DIG-130 Isolated Feedback Generator an DIG-131 DIG-132 photovoltaic charge controller circuit mosfetdriver Dionics
Contextual Info: 31E D DIONICS INC B 5ÖMÜÖ0M D0003ññ M B S D 10 7 = V /-S \3 HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-130 DIG-131 DIG-132 i 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER

EIGHT MOSFET ARRAY

Abstract: 200v 100mA mosfet DIG-130 EIGHT n-channel MOSFET ARRAY
Contextual Info: 31E D DIONICS INC B EÖMÖÖOM 0GQ03ÛÔ M B S D 10 7=V/-?3 HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-130 DIG-131 DIG-132 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER * EIGHT PIN

KY transistor

Abstract: 150B
Contextual Info: Case Outlines and Dimensions - T0-254AA Tabless Standard & Low Ohmic 0.13 [.005] 13.84 [.545] 13.59 [.535] A 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 1 C 2 3 2X 0.84 [.033] MAX. 17.40 [.685] 12.95 [.510] 3X 3.81 [.150] B 1.14 [.045] 0.89 [.035]

varistor 565-1

Abstract: Z 151 VARISTOR VARISTOR etc 333 varistor 6kv 3ka 3SM diode VDE 565-1 WXP-103K 4532 MOSFET varistor en132400 varistor 471 14
Contextual Info: 2 | Protection Products Short Form Catalog Metal Oxide Varistor VDE Diameters Peak Current, 8/20ms Amps Varistor Voltages 5mm 100, 400, 800 18, 22, 27, 33, 39, 47, 56, 68, 82, 100, 120, 150, 180, 200, 220, 240, 270, 300, 330, 360, 390, 430, 470, 510, 560, 620, 680

pwm circuits

Abstract: SOT-263 BUK100
Contextual Info: 40 Power Devices Power M O SFET Transistors Protected M OSFET Switches TOPFET TOPFET is a range of protected MOSFET switches featuring a m onolithic construction and providing the follow ing protection features: • ESD protection on all pins • Overvoltage protection

3N171

Abstract: 3N170 3N170-1
Contextual Info: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)

3n170 intersil

Abstract: amelco
Contextual Info: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)

3N163

Abstract: 3N164
Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage

amelco

Abstract: UNION CARBIDE
Contextual Info: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200 FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)

Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE s FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated G 2 3 D S 1 4 C Maximum Temperatures

mosfet 2n4351

Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 20mA HIGH GAIN gfs = 1000µS ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated 1 Maximum Temperatures Storage Temperature -55 to +150 °C

2N4351

Abstract: mosfet 2n4351
Contextual Info: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures

3n163

Abstract: UNION CARBIDE
Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V

intersil dual p-channel mosfet to-78

Abstract: 3N190 3N191
Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS

3N165

Abstract: 3N170 3N171
Contextual Info: 3N170, 3N171 N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE LOW SWITCHING VOLTAGES LOW DRAIN-SOURCE RESISTANCE LOW REVERSE TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted)

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O I* t F O f lH D â tS Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 2.5V Driver Voltage p-channel MOSFETs Electrical Characteristics Maximum Ratings, T, = 25°C

Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated

3N165

Abstract: 3N166
Contextual Info: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)

Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 IGSS ≤ ±10pA LOW GATE LEAKAGE CURRENT Crss ≤ 1.0pF LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS TO-78 TOP VIEW 1 case &

Contextual Info: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 IGSS ≤ ±10pA LOW GATE LEAKAGE CURRENT Crss ≤ 1.0pF LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS TO-78 TOP VIEW 1 case &