150B Search Results

EP2034-150B1

Abstract: LED wavelength 520 high light LED emergency light
Contextual Info: EP2034-150B1 Ver A/0 Enhanced Power LED Revolutionary Light Source Module e-mail:e-power@para.com.tw http://www.para.com.tw FEATURES Conventional LED design : Simple to use High Flux and Low Cost : More competitive advantages in the LED industry Special body frame : Excellent transiting heat from LED chip operating under 150mA.

EP2032-150B1

Abstract: 2 pin ir led
Contextual Info: EP2032-150B1 Ver A/0 Enhanced Power LED Revolutionary Light Source Module e-mail:e-power@para.com.tw http://www.para.com.tw FEATURES Conventional LED design : Simple to use High Flux and Low Cost : More competitive advantages in the LED industry Special body frame : Excellent transiting heat from LED chip operating under 150mA.

PSMN035-150P

Abstract: PSMN035-150B
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN035-150B, PSMN035-150P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 150 V

60175

Abstract: 150GC15 150JC15 150BC15 150DC15 150FC15 150LC15 150NC15 150QC15 tJ01
Contextual Info: 9097250 TOSHIBA STANDARD RECTIFIER ^ 150QC15 39C <D I S C R E T E /OPTO _ de | T 0 T 7 a s D 0 2 23 0 ]oaaa3 D a 1200V 150A MAXIMUM RATINGS C H A R A C T E R IS T IC RATING SY M B O L 150BC15 R epetitive Peak R everse Voltage 150DC15 200 150FC15 300 150GC15

7427 pin configuration

Contextual Info: O K I Semiconductor MTC821M216-xxOBI Static R A M GENERAL DESCRIPTION The MTC821M216-150B1 and MTC821M216-200B1 are 1.25M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

MTC8201M16-200B1

Abstract: MTC8201
Contextual Info: O K I Semiconductor M TC8201M 16-XX0B1 Static RAM GENERAL DESCRIPTION The MTC8201M16-150B1 and MTC8201M16-200B1 are 1M bytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

P5HP

Abstract: P5HP-150B-1 PB-129
Contextual Info: Packing Name Magazine PB-129 5 pin SIP A N E M Q D 1 5 K Y H J V U C F G M ITEM NOTE Each lead centerline is located within 0.15 mm 0.006 inch of its true position (T.P.) at maximum material condition. NEC CODE EIAJ CODE Weight (Reference Value) P5HP-150B-1

st marking GP code

Abstract: SO8w* footprint
Contextual Info: LCP02-150B1 Protection IC for ringing SLICs Features • Protection IC recommended for ringing SLICs ■ Wide firing voltage range: -120 V to +120 V ■ Low gate triggering current: IG = 5 mA max ■ Peak pulse current: IPP = 30 A 10/1000 µs ■ Holding current: IH = 150 mA min.

EP2012-150XX

Abstract: para light EP2012-150B1 ep2012-150 470nm 1E1E
Contextual Info: EP2012-150B1 Ver A/0 Enhanced Power LED Revolutionary Light Source Module e-mail:e-power@para.com.tw http://www.para.com.tw FEATURES Conventional LED design : Simple to use High Flux and Low Cost : More competitive advantages in the LED industry Special body frame : Excellent transiting heat from LED chip operating under 150mA.

FX614D4

Abstract: FX614 FX614P3
Contextual Info: CML Semiconductor Products Bell 202 Compatible Modem FX614 D/614/4 October 1997 Advance Information 1.0 Features • 1200bits/sec 1/2 Duplex Bell 202 compatible Modem with: • Optional 5bits/sec and 150bits/sec Back Channel • Optional 1200bits/sec Data

Contextual Info: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 200ns). The mounting base of the

Contextual Info: LCP02-150B1 Protection IC for ringing SLICs Datasheet − production data Features • Protection IC recommended for ringing SLICs ■ Wide firing voltage range: -120 V to +120 V ■ Low gate triggering current: IG = 5 mA max ■ Peak pulse current: IPP = 30 A 10/1000 µs

PSMN035-150B

Abstract: PSMN035-150P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA

Contextual Info: filter specification TFS 150B ¼ Measurement condition

FX614D4

Abstract: FX614 FX614P3 fx614d
Contextual Info: CML Semiconductor Products Bell 202 Compatible Modem FX614 D/614/3 November 1996 Advance Information 1.0 Features • 1200bits/sec 1/2 Duplex Bell 202 compatible Modem with: • Optional 5bits/sec and 150bits/sec Back Channel • Optional 1200bits/sec Data

Contextual Info: Semiconductor MTC821M516-150B1 SRAM CARO DESCRIPTION The MTC821M516-150B1 is 1.5M bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES ' Card Size 85.6 (Length) x 54.0 (Width) x 3.3 (Thickness) [mm]

Contextual Info: PULSE SPECIALTY COMPONENTS Low Profile Plug-in Transformers Part Number LP 10-250B23 LP 10-600B1 LP 10-1200B2 LP 10-2400B89 LP 10-4800B90 LP 12-200B24 LP 12-450B3 LP 12-900B4 LP 12-1900B91 LP 12-3800B92 LP 16-150B25 LP 16-350B5 LP 16-700B6 LP 16-1500B93 LP 16-3000B94

marking atoa

Contextual Info: MIL-M-38510/150C 7 November 1985 SOPCRSEDING— M IL-M-38510/150B USAF 26 January 1976 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, MAGNITUDE COMPARATORS, MONOLITHIC SILICON This specification Is approved for use by all Depart­ ments and Agencies of the Department of Defense.

FX614P3

Contextual Info: o r n i CML Semiconductor Products i Bell 202 Compatible Modem FX614 D/614/4 October 1997 Advance Information 1.0 Features • 1200bits/sec 1/2 Duplex Bell 202 compatible Modem with: • Optional 5bits/sec and 150bits/sec Back Channel • Optional 1200bits/sec Data

150B

Contextual Info: 150b.eng 6/97 _ TELE FILTER tft GmbH filter specification TFS 150B 1/4

HD radio nxp application

Abstract: PSMN030-150B
Contextual Info: PSMN030-150B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 13 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

Contextual Info: ZWS50-150BAF Series Single Output, High Reliability AC-DC Power Supplies Features  33W to 150W  Universal Input 85 - 265VAC  Power factor Corrected  Convection Cooled  5 year warranty  Compact Design Key Market Segments & Applications Specifications

1SS83

Abstract: GRZZ0002ZB-A SC-40
Contextual Info: 1SS83 Silicon Epitaxial Planar Diode for High Voltage Switching REJ03G0563-0300 Previous: ADE-208-150B Rev.3.00 Apr 18, 2005 Features • High reverse voltage. (VR = 250 V) • High reliability with glass seal. Ordering Information Type No. Cathode band