50W 4 GHZ LINEAR POWER AMPLIFIER Search Results

FMM5007VF

Abstract: 50W linear power amplifier
Contextual Info: FMM5007VF GaAs MMIC FEATURES • • • • • • High Output Power: 31.0dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5007VF is a MMIC amplifier designed for VSAT applications

FMM5010

Abstract: FMM5010VF
Contextual Info: FMM5010VF GaAs MMIC FEATURES • • • • • High Output Power: 21.0dBm typ. High Linear Gain: 25dB (typ.) Low In/Out VSWR Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5010VF is a power amplifier designed for VSAT applications

Contextual Info: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications

50w transistor

Abstract: BFR193T BFR193TW
Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

BFR193T

Abstract: BFR193TW
Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

Contextual Info: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.

MGFC47A4450

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package

MGFC47V5864

Abstract: mitsubishi optical transmitter
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package

brf92

Abstract: BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473
Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW · · · · · Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,

BRF92

Abstract: BRF92A
Contextual Info: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data · · · · · C E B Case: SOT-23, Molded Plastic

Contextual Info: Skyworks New and Featured Products David Seed Shuping Zhang MTTS 2014 Skyworks Solutions, Inc. Proprietary and Confidential Information Information 1 Skyworks At A Glance Skyworks Solutions is a Vertically Integrated provided of High Performance Analog and Mixed Signal Semiconductors Enabling Mobile Connectivity

FAGD1651132BA

Abstract: GD16511 GD16511-32BA STM-16
Contextual Info: 2.5 Gbit/s Limiting Amplifier GD16511 an Intel company Preliminary General Information GD16511 is a wide bandwidth, limiting amplifier designed for: u SDH STM-16 u SONET OC-48 optical communication systems. It features a linear gain of at least 28 dB and a 3 dB bandwidth larger than 3 GHz,

P1dB50

Contextual Info: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0

Contextual Info: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0

50W 4 GHz linear power amplifier

Contextual Info: < C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4

Contextual Info: < C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4

CC45T47K240G5C2

Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
Contextual Info: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB

Contextual Info: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss

10KW

Abstract: TGA4509 TGA4509-EPU 50W 4 GHz linear power amplifier
Contextual Info: Advance Product Information January 23, 2003 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

RAYTHEON

Abstract: 50W 4 GHz linear power amplifier
Contextual Info: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The

Contextual Info: < Ku band internally matched power GaN HEMT > MGFK47G3745 13.75 – 14.5 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING The MGFK47G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications. Unit : millimeters 21.0 +/-0.3 FEATURES 1

CGHV96100F1

Abstract: taconic
Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison