50A MOSFET Search Results

D50NH

Abstract: D50NH02L STD50NH02L STD50NH02L-1 STD50NH02LT4 JESD97 d50nh02
Contextual Info: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A • Logic level device ■ RDS(ON) * Qg Industry’s benchmark

STB55NF06

Abstract: p55nf06 Mosfet P55NF06 P55nf B55NF06 P55nf*06 for p55nf06 "p55nf06" b55nf p55nf06fp
Contextual Info: STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015Ω - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STB55NF06 60V <0.018Ω 50A STB55NF06-1 60V <0.018Ω 50A STP55NF06 60V <0.018Ω

p40nf10

Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
Contextual Info: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■

Contextual Info: MOSFET 50A 500V 1 PDM505HC

D50NH02L

Abstract: D50NH STD50NH02LT4 STD50NH02L STD50NH02L-1 JESD97 50A33 d50nh02
Contextual Info: STD50NH02L STD50NH02L-1 N-channel 24V - 0.0085Ω - 50A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD50NH02L-1 24V <0.0105Ω 50A STD50NH02L 24V <0.0105Ω 50A 3 3 2 • Logic level device ■ RDS(ON) * Qg Industry’s benchmark

Contextual Info: MOSFET 50A 500V 1 PDM505HA P2HM505HA

Contextual Info: MOSFET 50A 450 500V 1 PD7M441H P2H7M441H PD7M440H

Contextual Info: MOSFET 50A 450 500V 1 PD7M441L P2H7M441L PD7M440L

F1S50N06

Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

fp50n06

Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

mosfet 100A

Abstract: 40V, 50A n mosfet
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 50A @VGS = 10V RDS ON

50n06l

Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

MDI1752

Abstract: 40V50A 40V, 50A n mosfet 82269
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

STB55NF06

Contextual Info: STB55NF06 N-CHANNEL 60V - 0.018Ω - 50A D2PAK STripFET POWER MOSFET TYPE STB55NF06 • ■ ■ ■ VDSS RDS on ID 60V <0.022Ω 50A TYPICAL RDS(on) = 0.018Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT

fairchild APPLICATION NOTE AN 9321

Contextual Info: RFP50N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 50A, 22 mΩ • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

rfp50n06

Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

MDD1653

Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state

2E12

Abstract: FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK160D FRK160H FRK160R
Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • 42V Automotive Load Control • Qg(tot) = 31nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

Contextual Info: FDD13AN06A0 N-Channel PowerTrench MOSFET 60V, 50A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 50A • Motor / Body Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management

Contextual Info: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • DC-DC converters and Off-line UPS • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

Contextual Info: FDD14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 50A, 14.6mΩ Features Applications • r DS ON = 12.8mΩ (Typ.), VGS = 5V, ID = 50A • Motor / Body Load Control • Qg(tot) = 25nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management

MDF1752

Abstract: 220F
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state